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2003-10-02 WJ HBT amplifier eyes medium power market
WJ Communications Inc. has introduced a family of InGaP hetero-junction bipolar transistor medium power driver amps that are suitable for wireless apps.
2002-01-31 WIN receives certification for GaAs HBT
Taiwan foundry WIN Semiconductors Corp. has received certification from a major Japanese IDM house for its 25m HBT (heterojunction bipolar transistor) used in a Bluetooth PA.
2007-02-27 SiGe HBT amplifiers roll for two-way radios
California Eastern Laboratories has announced the availability of a medium-power SiGe HBT transistor amplifier from NEC.
2002-01-07 RF Micro starts production in second GaAs HBT facility
RF Micro Devices Inc. has started production at its second GaAs HBT fabrication facility, located in Greensboro, North Carolina.
2011-11-23 Research targets HBT device running at 500GHz
The SiGe:C heterojunction bipolar transistors combine high-density and low-cost integration, making them suitable for consumer applications, noted Imec.
2000-06-12 New High Power, High Efficiency HBT GSM Power Amplifier
This technical note examines the RF2123, a GSM cellular power amplifier that is fabricated based on the HBT technology and features efficiencies up to of 55 percent and power levels of 4W.
2000-06-12 New High Efficiency HBT Analog Cellular Power Amplifier
This technical note examines the RF2131, an HBT analog cellular power amplifier that can be used to simplify cellular phone design and features a single 4.8V power supply, power output of 1.2W at 824MHz to 849MHz range, current consumption of 420mA and total efficiency of 60 percent.
2000-06-13 Low-Cost HBT Upconverters for CDMA Transmitter ICs
This technical note describes two transmit upconverters for the CDMA digital communication technology. These upconverters include the RF9938 and the RF9908 ICs, which are both designed for PCS applications.
2007-06-15 InGaP HBT vs. CMOS for mobile handset power amps
Selecting the right type of PA is one of the key decisions that can help achieve a compelling design that delivers a competitive advantage.
2008-06-24 HV-HBT devices offer higher efficiency, lower cost
Aimed at 3G/4G mobile infrastructure applications, TriQuint Semiconductor has launched two high-voltage heterojunction bipolar transistor devices that tout greater amplifier efficiency, which can lower initial base station costs, power consumption and operating costs.
2000-06-12 High Linearity HBT Amplifiers for CATV Systems
This technical note examines RF Micro Devices' wide-bandwidth amplifiers, including the RF2312, RF2317 and RF2316, which deliver excellent frequency response and high linearity to address the requirements of the stress-filled communication channel applications.
2000-06-13 High Dynamic Range GaAs HBT LNA/Mixers for PCS Systems
This technical note discusses the RF9936 family of fully monolithic GaAs HBT LNA/Mixer devices, which are developed to address spread-spectrum PCS applications in the North American 1.93GHz to 1.99GHz frequency band.
2000-06-09 HBT Technology Adds Power to CDMA Chipset
This technical note discusses a four-device chipset that provides an effective bandwidth utilization and low operating power for CDMA applications. The chipset includes the RF9906 LNA/mixer, the RF9908 upconverter, and the RF9907 and RF9909 AGC amplifier ICs.
2000-09-27 HBT RFICs using AlGaAs, InGaP-GaAs and SiGe technologies for base station & repeater designs
HBT-based RF Integrated Circuits (RFICs) have gained wide acceptance by all major wireless and wireline equipment suppliers as the preferred technology where performance, high-linearity, efficiency and price competitiveness are a premium. This paper examines the trade-offs between various device technologies for base station applications.
2006-07-04 HBT power amps target linear WiMAX apps
Mimix Broadband has introduced a family of internally pre-matched power amplifiers designed for linear WiMAX applications at 700MHz, 2.5GHz and 3.5GHz.
2012-07-27 HBT power amp targets wireless infrastructure apps
RFMD's RFPA2089 is a single-stage InGaP HBT power amplifier that offers high-gain linear operation at a comparably low DC power geared for next generation radios requiring high efficiency.
2013-05-28 GCS unveils two InGaP HBT foundry processes
In addition to maintaining the super low phase noise performance offered by the company's D1 VCO process, the D5 InGaP HBT process offers an advantage of a wider (2x) frequency tuning range.
2001-10-08 GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-212)
This application note describes the features, parameters, behavior and package details of RF Nitro's NDA-212 GaInP/GaAs HBT MMIC distributed amplifier for RF, microwave or optical amplification.
2001-10-08 GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-210-D)
This application note describes the features, parameters, behavior and package details of RF Nitro's NDA-210-D GaInP/GaAs HBT MMIC distributed amplifier for RF, microwave or optical amplification.
2010-11-22 Broadband gain blocks give high linearity via InGaP HBT technology
Avago Technologies announced two new high-linearity gain block amplifiers. The AVT-55689 and AVT-54689 gain blocks provide low current consumption and robust electrostatic discharge protection. These devices function in frequency bands from DC to 6000 MHz.
2004-09-14 Anadigics supplies Samsung with InGaP HBT PAs
Anadigics Inc. is supplying CHP1237 InGaP HBT (indium gallium phosphide heterojunction bipolar transistor) power amplifier (PA) modules (PA) to Samsung Electronics for the SPH-S2300 CDMA phone with embedded 3.2 megapixel digital camera.
2005-05-11 Agilent HBT model adopted by NEC for high-frequency chip design
The heterojunction bipolar transistor (HBT) model from Agilent Technologies Inc. has been selected by NEC Compound Semiconductor Devices Ltd as the standard simulation model for high-frequency gallium arsenide (GaAs) HBT development.
2000-06-09 Advantages of HBT
This application note presents the advantages of using the GaAs HBT technology in fabricating many wireless components, such as power amplifiers.
2006-12-01 Advancing GaAs potential via pHEMT/HBT mix
Monolithic pHEMT/HBT ICs represent a significant step in advancing the potential for GaAs capabilities by maximizing the advantages of both bipolar and FET circuits.
2000-06-12 A Linear, High Efficiency, HBT, CDMA Power Amplifier
This technical note examines the RF2108, an HBT CDMA cellular dual-mode power amplifier that is designed to simplify cellular phone design and improve operation.
2000-06-14 A 3V HBT Power Amplifier for CDMA/AMPS Handsets
This technical note examines RF Micro Devices' RF2152 HBT power amplifier, which offers handset designers the opportunity to optimize an amplifier for IS95 CDMA and dual CDMA/AMPS applications.
2002-12-11 WIN forms alliance with Siemens subsidiary
WIN Semiconductors Corp. struck an alliance with Roke Manor Research.
2003-07-02 Vitesse to make communication chips
Vitesse Semiconductor will work with BAE Systems and the University of Illinois Urbana Champain to fulfill a $6M contract from Darpa to develop advanced manufacturing processes and communication ICs.
2007-10-09 TriQuint tips green base station power amp
Triquint Semiconductor has started sampling high-voltage GaAs power amplifier transistors it claims substantially increase the efficiency of 3G cellular base stations, leading to meaningful energy savings.
2002-11-08 Toshiba SiGe HBTs have 34 percent smaller packaging
The MT4S100T and MT4S101T SiGe HBTs will now be available in the proprietary TESQ package that measures 1.2-by-1.2-by-0.52mm - 34 percent smaller than the 4-pin SOT-343 surface-mount package.
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