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2005-02-14 SOT-89 FETs offer low cost, high linearity
Agilent announced two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5-by-4.1-by-1.5mm SOT-89 surface-mount package
2007-05-22 RF transistor suits WiMAX applications
Nitronex Corp. has developed a 28V, 100W GaN high electron mobility transistor (HEMT) for WiMAX applications.
2012-09-04 RF transistor aimed at secondary surveillance radar aviation apps
Microsemi's 1011GN-700ELM is based on GaN on SiC technologies, and operates at 1030MHz and supports short- and long-pulsed extended length message.
2013-06-11 Research combines LED, power transistor in GaN chip
Engineers at Rensselaer Polytechnic Institute said the innovation could open the door to a new generation of LED technology that is less expensive to manufacture and significantly more efficient.
2007-12-18 Korea's scientists herald world's fastest nano transistor reports that a group of Korean scientists revealed that they have a prototype of what they claim is the world's fastest nanoscale transistor
2005-04-20 High-power amp IC boosts signals for military, communications apps
Mimix Broadband introduced a GaAs MMIC two-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing
2007-11-01 HEMT transistor handles Ku band
Mitsubishi Electric has introduced a GaAs HEMT (High Electron Mobility Transistor) MGF4941AL that is mainly intended for use in the Ku band.
2005-04-06 Buffer amp adjusts for low noise or high power
Mimix introduces a GaAs MMIC three-stage buffer amplifier with ultra wide bandwidth and high dynamic range
2009-06-23 Amplifiers tailored for high-frequency apps
RF Micro Devices, Inc. has introduced five new distributed amplifiers for broadband, high-frequency applications
2005-05-24 Agilent's new active mixer combines high-linearity, low-LO
The new low-LO power E-pHEMT MMIC active mixer from Agilent is designed to meet the performance requirements of BTS 3G base station radio cards and other point-to-point and point-to-multipoint microwave radio link apps.
2014-06-06 2D FET exhibits high electron mobility
The FET is built from all 2D material components, suffering no performance drop-off under high voltages and providing high electron mobility even when scaled to a monolayer in thickness
2004-11-01 NEC claims breakthrough in high-k dielectrics
Researchers call high-k film in chip-making process reliable and good for a 10-year run
2010-02-17 Intel sees III-V-on-silicon as 2015 transistor option
Intel director of technology strategy Paolo Gargini said that the inclusion of III-V materials is a 2015 transistor option that could deliver either 3x the performance of silicon at the same power consumption
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop
2006-06-26 NEC, NEC Electronics introduce high-k CMOS tech
NEC Electronics and NEC introduced a CMOS technology for system LSIs using design rules for 55nm and below.
2011-05-03 ITRS chairman: Tunnel FET possible transistor option
ITRS chairman, Paolo Gargini, believes that a field effect transistor (FET) combined with quantum tunneling can reduce power consumption, while maintaining adequate performance
2003-10-02 High-k, strained Si leaving the lab
With performance improvements getting harder to wring out of CMOS by transistor shrinks, researchers are increasingly turning to strained silicon, high-k oxides, and different types of on-chip silicon-crystal orientation
2005-10-06 Fluorine sweeps high-k defects out of the gate
Hafnium oxide, the anointed successor to silicon dioxide in the gate stack, has a new ally: fluorine.
2015-03-02 Unsolderable no more: Liquid-process transistor does the trick
The "miracle solder" creates new materials by joining their powdered forms into a continuous single-crystal-like material, and can even be used in 3D printers to join formerly incompatible materials.
2001-08-09 Some new technologies in future mobile terminal
This conference technical paper summarizes new ideas, technologies and trends of wireless terminals, such as RF semiconductor, data transmission and image capture area, which can be used in future mobile terminals (phones).
2014-11-17 Self-heating limits noise in microwave amplifiers
Chalmers University of Technology scientists showed how noise in a microwave amplifier is limited by self-heating at very low temperatures, which can be useful in quantum computers and radio astronomy.
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2002-12-26 Nanoimprint lithography ready to make its mark
A potentially low-cost form of lithography affectionately known as
2003-05-06 Mitsubishi Electric forms new semiconductor division
Mitsubishi Electric & Electronic USA Inc. has established a new semiconductor division which will provide compound semiconductors in discrete and module form for optoelectronic and microwave/ RF customers based in North America.
2003-06-11 Mitsubishi develops 76GHz MMICs for automobile radars
Mitsubishi Electric Corp. has developed eight high performance MMIC chipset solution models by electronic beam scanning for 76GHz mm-wave radars
2006-08-08 Mitsubishi announces sale of GaAs HEMT in Ka band
Mitsubishi Electric announced the development of a high gain version of a micro-X package HEMT, suitable for low noise amplifiers in 18-20GHz-band satellite broadcasting reception systems
2005-07-15 Ka-band PAs and doubler target wireless communications apps
Mimix Broadband introduced a new line of Ka-band GaAs monolithic microwave integrated circuit products, including power amplifiers and a doubler, covering the 27GHz to 34GHz frequency bands
2006-06-16 GaN transistors target cellular, WiMAX bands
RFMD is sampling out a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors for cellular infrastructure and WiMAX base stations.
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today.
2006-06-15 GaN HEMT targets wireless, WiMAX apps
Cree is sampling its new 15W packaged GaN HEMT that is optimized for broadband wireless access and WiMAX applications.
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