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2007-06-15 TI to use high-k dielectrics for 45nm node
TI this week entered the high-k dielectrics arena, announcing plans to integrate this material for its high-performance chips at the 45nm node.
2004-11-01 NEC claims breakthrough in high-k dielectrics
Researchers call high-k film in chip-making process reliable and good for a 10-year run
2007-12-13 IMEC reports progress on high-k metal gates at 32nm
IMEC reported progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node.
2007-01-30 IBM tips high-k, metal gates
IBM claims that it has developed the long-awaited improvements to transistor technology: high-k dielectrics and metal gates for use in logic chips.
2008-04-16 IBM alliance makes progress in 32nm high-k metal gates
IBM and its partners in the race to develop and ship high-k dielectrics and metal gates for the 32nm node have officially revealed their process and are claiming they can now outperform the rest of the industry in performance and power consumption.
2009-04-20 IBM 'fab club' tips 28nm high-k process
Despite the downturn, the silicon foundry business is heating up as IBM Corp.'s "fab club" has officially rolled out its 28nm process based on high-k dielectrics and metal gates.
2007-05-02 High-k dielectrics to benefit from composite nanomaterials, says researchers
Composite nanomaterials promise to double the charge storage capabilities of capacitors, as well as supercharge plastic circuits with high-k dielectric gate oxides, says researchers at the Georgia Institute of Technology
2007-12-19 Anxiety high as race begins for high-k 32nm
While foundries are just beginning to ramp their 45nm processes, vendors are already eyeing the next big challengethe race to develop and ship high-k dielectrics and metal gates for the 32nm node.
2007-11-22 Up close and personal with Intel's 45nm high-k guys
Three Intel researchers who were part of the team behind the 45nm high-k metal gate breakthrough talk about the highs and lows of the project and what motivated them to press on and move on to more challenging endeavors
2008-04-29 TSMC throws hat in 32nm high-k ring
TSMC has outlined details of its 32nm road map, giving an impression it may be playing catch-up with its foundry rivals, particularly in the emerging arena of high-k materials and metal gates
2008-10-03 TSMC delays high-k offering to 28nm
Taiwan Semiconductor Manufacturing Co. Ltd has rolled out its 28nm process and disclosed it will push out its initial high-k/metal-gate offering until 28nm, putting it slightly behind its rivals in Chartered, IBM and Samsung
2005-01-20 Transistor's gate stack structure uses Hf-based high-k dielectric
NEC and NEC Electronics announced the development of a transistor that features a new gate stack structure using a Hf-based high-k dielectric and a metal gate electrode
2007-01-30 Sematech unveils solution for high-k CMOS devices
In its quest for developing dual metal gates for high-k CMOS devices, chip-making R&D consortium Sematech has demonstrated high-k/metal gate stacks to build high-performance nMOS and pMOS transistors in CMOS configuration
2008-12-12 Intel widens lead in high-k/metal gate race
Intel is expected to extend it s its lead over Advanced Micro Devices, IBM and other microprocessor vendors in the high-k/metal-gate race at next week's International Electron Devices Meeting
2005-04-19 Intel may drop high-k gate dielectric, despite work on next version
Intel Corp. may drop the use of a high-k dielectric in the transistor gate stack at the 45nm manufacturing process node, according to Paolo Gargini, Intel Fellow and the company's director of technology strategy
2010-06-16 IBM 'fab club' joins high-k bandwagon
IBM Corp. "fab club," which includes Samsung Electronics, GlobalFoundries and Synopsys, has announced the delivery of 32-/28nm process and design platform, based on high-k and metal gates
2007-09-17 High-k/metal-gate tools enhance 45nm designs
Applied Materials has rolled out a trio of tools for the high-k/metal-gate at 45nm: an atomic-layer deposition chamber for the company�s single-wafer Centura platform and various configurations for the Endura platform
2007-08-01 High-k, metal gates clear way for new chips
From an industrywide perspective, high-k and metal-gate technologies allow a restart of chip scaling with reduced leakage, higher initial product costs, performance hits and tool changes in the process flow
2007-12-06 High-k process for CMOS cancels gate leakage
A high-k dielectric process for CMOS transistors promises to turn the International Semiconductor Roadmap into a freeway by eliminating the gate-leakage problem at advanced nodes down to 10nm
2005-10-06 Fluorine sweeps high-k defects out of the gate
Hafnium oxide, the anointed successor to silicon dioxide in the gate stack, has a new ally: fluorine.
2013-02-18 Insulator interfaces ease nanomaterial design
Researchers developed insulators called 'high-k dielectrics' that link heavier elements, such as hafnium or zirconium, into insulating oxide films touting exceptional charge-isolating capabilities.
2007-04-02 IC firms announce gate material breakthroughs
Three entitiesIBM Corp., Intel Corp. and Sematechhave separately disclosed breakthroughs in the development of high-k dielectrics and metal gates for use in advanced gate stack applications in logic designs.
2002-04-04 IBM, Sony and Toshiba to co-develop advanced chip processes
In a deal that will move SOI and other advanced semiconductor process technologies into cost-sensitive consumer electronics ICs, IBM, Sony Corp., Sony Computer Entertainment Inc. and Toshiba have signed a four-year process technology development agreement.
2010-03-11 Buzz: Samsung to go gate-last for 22nm
South Korea's Samsung Electronics Co. Ltd is reportedly looking at gate-last technology as an alternative in high-k dielectrics, according to sources.
2005-06-17 UMC shrinks Nitrided Gate-oxide thickness to 1.0nm
Taiwan semiconductor foundry United Microelectronics Corp. (UMC) revealed that its R&D team has reduced the equivalent oxide thickness (EOT) of nitrogen doped silicon oxide (Oxy-nitride, SiON) gate dielectrics to about 1.0nm using a new nitrogen profile engineering technique
2010-04-15 TSMC skips 22nm, leaps to 20nm half-node
Taiwan Semiconductor Manufacturing Co. Ltd announced plans to skip the 22nm "full node" after the 28nm node and move directly to the 20nm "half node."
2009-06-19 TSMC claims first 28nm SRAM cell
TSMC claims it has developed the first functional 64Mbit SRAM cell, based on its 28nm technology.
2006-06-02 Symposium to mull 45nm challenges
Technologists attending the 2006 Symposium on VLSI Technology in mid-June will hear about multiple facets of 45nm processes
2004-12-22 NEC transistor with improved operation speed
NEC and NEC Electronics announced the development of its new transistor that features a new gate stack structure using an Hf-based high-k dielectric and a metal gate electrode
2007-02-01 Logic chipmakers seek 32nm breakthroughs
Even as they put the finishing touches on their 45nm process technologies and tweak them for low power, leading-edge logic chipmakers are scrambling to find manufacturing breakthroughs for the 32nm node and beyond.
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