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2007-11-22 Up close and personal with Intel's 45nm high-k guys
Three Intel researchers who were part of the team behind the 45nm high-k metal gate breakthrough talk about the highs and lows of the project and what motivated them to press on and move on to more challenging endeavors.
2008-11-27 UMC pushes high-k process for 45nm
Foundry United Microelectronics Corp. has validated its high-k metal gate process with a test SRAM design run at the 45nm node.
2010-03-01 TSMC takes on 40nm yields, high-k, litho issues
At the TSMC Japan Executive Forum in Yokohama, Shang-Yi Chiang, senior VP of R&D at TSMC, addressed several issues about the silicon foundry giant.
2008-10-03 TSMC delays high-k offering to 28nm
Taiwan Semiconductor Manufacturing Co. Ltd has rolled out its 28nm process and disclosed it will push out its initial high-k/metal-gate offering until 28nm, putting it slightly behind its rivals in Chartered, IBM and Samsung.
2008-12-17 Tech firms detail high-k developments
IBM, Intel, TSMC and the NEC-Toshiba duo are expected to present papers on 32nm processes with high-k and metal gates at this week's International Electron Devices Meeting (IEDM
2007-01-30 Sematech unveils solution for high-k CMOS devices
In its quest for developing dual metal gates for high-k CMOS devices, chip-making R&D consortium Sematech has demonstrated high-k/metal gate stacks to build high-performance nMOS and pMOS transistors in CMOS configuration.
2009-08-10 Is TSMC delaying high-k again
TSMC appears to have delayed its high-k/metal-gate technologyby at least three quarters or more.
2008-12-12 Intel widens lead in high-k/metal gate race
Intel is expected to extend it s its lead over Advanced Micro Devices, IBM and other microprocessor vendors in the high-k/metal-gate race at next week's International Electron Devices Meeting.
2007-01-30 IBM shifts to high-k metal gates
IBM Corp. along with its development partners AMD, Sony and Toshiba are employing a new method to construct transistors gates using a new material to further cut power leakage and chip size, as well as improve the performance of chip transistors.
2010-06-16 IBM 'fab club' joins high-k bandwagon
IBM Corp. "fab club," which includes Samsung Electronics, GlobalFoundries and Synopsys, has announced the delivery of 32-/28nm process and design platform, based on high-k and metal gates
2007-09-17 High-k/metal-gate tools enhance 45nm designs
Applied Materials has rolled out a trio of tools for the high-k/metal-gate at 45nm: an atomic-layer deposition chamber for the company�s single-wafer Centura platform and various configurations for the Endura platform.
2007-08-01 High-k, metal gates clear way for new chips
From an industrywide perspective, high-k and metal-gate technologies allow a restart of chip scaling with reduced leakage, higher initial product costs, performance hits and tool changes in the process flow.
2009-06-18 Globalfoundries touts 22nm high-k advance
Globalfoundries has detailed an innovative technology that could overcome one of the key hurdles to advancing high-k metal gate (HKMG) transistors, bringing the industry one step closer to the next generation of mobile devices with more computing power and vastly improved battery life.
2011-10-28 Benefits of anti-fuse NVM in 28nm high-K metal gate
At smaller process geometries, especially 28nm HKMG, the challenges to integrating NVM such as flash, pseudo flash, and e-fuse are effectively addressed with an anti-fuse solution.
2008-11-12 A high-five for high-k reinvented transistors
Nov.10 marks a major milestone: the one-year anniversary of shipping the world's first ever Intel processors manufactured on our 45 nanometer processbased on an entirely new 'high-k metal gate' transistor formula.
2008-04-29 TSMC throws hat in 32nm high-k ring
TSMC has outlined details of its 32nm road map, giving an impression it may be playing catch-up with its foundry rivals, particularly in the emerging arena of high-k materials and metal gates
2005-07-06 Transistor's gate stack structure uses Hf-based, high-k dielectric
NEC Corp. has announced the development of a transistor featuring a new gate stack structure using a Hf-based, high-k dielectric and a metal gate electrode
2005-01-20 Transistor's gate stack structure uses Hf-based high-k dielectric
NEC and NEC Electronics announced the development of a transistor that features a new gate stack structure using a Hf-based high-k dielectric and a metal gate electrode.
2005-04-19 Intel may drop high-k gate dielectric, despite work on next version
Intel Corp. may drop the use of a high-k dielectric in the transistor gate stack at the 45nm manufacturing process node, according to Paolo Gargini, Intel Fellow and the company's director of technology strategy
2007-12-13 IMEC reports progress on high-k metal gates at 32nm
IMEC reported progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node
2011-01-21 IBM ‘fab club? shifts to gate-last high-k
After championing the gate-first technology for years, IBM Corp.’s technology partners are now shifting their allegiance to the gate-last approach at the 20nm node, citing its ability to provide some density and scaling advantages as well as better price-performance at that node.
2007-01-30 IBM tips high-k, metal gates
IBM claims that it has developed the long-awaited improvements to transistor technology: high-k dielectrics and metal gates for use in logic chips
2008-04-16 IBM alliance makes progress in 32nm high-k metal gates
IBM and its partners in the race to develop and ship high-k dielectrics and metal gates for the 32nm node have officially revealed their process and are claiming they can now outperform the rest of the industry in performance and power consumption
2009-04-20 IBM 'fab club' tips 28nm high-k process
Despite the downturn, the silicon foundry business is heating up as IBM Corp.'s "fab club" has officially rolled out its 28nm process based on high-k dielectrics and metal gates
2003-10-02 High-k, strained Si leaving the lab
With performance improvements getting harder to wring out of CMOS by transistor shrinks, researchers are increasingly turning to strained silicon, high-k oxides, and different types of on-chip silicon-crystal orientation
2005-10-06 Fluorine sweeps high-k defects out of the gate
Hafnium oxide, the anointed successor to silicon dioxide in the gate stack, has a new ally: fluorine.
2007-12-19 Anxiety high as race begins for high-k 32nm
While foundries are just beginning to ramp their 45nm processes, vendors are already eyeing the next big challengethe race to develop and ship high-k dielectrics and metal gates for the 32nm node
2016-01-19 A tech walkthrough of metal gate I/O transistors
The input/output (I/O) transistor is the workhorse of the metal gate CMOS transistors, yet noone really talks about it. In this article, we'll see why it is worth a look
2010-04-15 TSMC skips 22nm, leaps to 20nm half-node
Taiwan Semiconductor Manufacturing Co. Ltd announced plans to skip the 22nm "full node" after the 28nm node and move directly to the 20nm "half node."
2012-04-20 TSMC shifts from multiple to single-only process at 20nm
Shang-yi Chiang, EVP at TSMC, said the firm might also offer an 18nm or 16nm process node after 20nm if lithography technology is not available to make 14-nm devices cost effectively.
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