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2007-09-06 MEMC power outage disrupts polysilicon supply
A power outage that hit an MEMC plant in Texas caused a disruption in polysilicon supply and prompted the company to lower Q3 estimates
2009-07-07 Sony acquires Epson TFT LCD assets
Sony Mobile Display will acquire the TFT LCD manufacturing-related assets operated by Epson Imaging Devices following an agreement between parent companies Sony Corp. and Seiko Epson Corp.
2005-04-14 Seiko Epson HTPS LCD panels to see volume production
Seiko Epson Corp. announced that it will mass produce 1080p high-temperature polysilicon (HTPS) LCD projector panels (D5 series) this month.
2006-02-20 HTPS panels produce 2,048 x 1,080 pixel resolution
Seiko Epson has developed what it touts as the first high-temperature polysilicon (HTPS) TFT liquid crystal panels for 3LCD digital cinema front projectors.
2007-08-28 HTPS panel touts improved aperture ratio
Seiko Epson Corp. has developed a new type of high-temperature polysilicon (HTPS) TFT LCD panel which boosts aperture ratios by 20 percent compared to previous models.
2004-10-27 Epson rolls out new HTPS TFT liquid crystal panel
Epson disclosed that it has succeeded in developing a new series of D4-technology, HTPS TFT liquid crystal panels for 3LCD business front-projectors.
2004-10-25 Epson rolls out new HTPS TFT liquid crystal panel
Epson announced that it has completed development work on its D5 series of true-HD-ready HTPS TFT liquid crystal panels for 3LCD-type front-projectors.
2004-10-28 Epson begins pilot production of HTPS TFT-LCD
Seiko Epson Corp. (Epson) has commenced pilot fabrication of high-temperature polysilicon (HTPS) TFT-LCDs at its newly built plant in the Chitose Bibi in Hokkaido, Japan.
2002-11-28 Chipmakers bang away at metal gates
Technologists are girding for yet another major change in CMOS gate stack integration: the replacement of polysilicon gate electrodes with two metals for PMOS and NMOS transistors
2002-06-26 Seiko Epson ships high-aperture TFT-LCD panels
The Dream III series of high-temperature polysilicon TFT-LCD panels from Seiko Epson Corp. are claimed to have higher aperture ratios and faster processing speeds than previous generation of products.
2008-09-11 HTPS panels enable HD viewing in 3LCD projection systems
Seiko Epson Corp. has begun volume production of two new models of 0.7-inch (1.9 cm diagonal) high-temperature polysilicon (HTPS) TFT liquid crystal panels for 3LCD-type projectors compatible with full high-definition.
2005-04-21 Epson Chitose plant commences production of HTPS panels
Epson revealed that its Chitose plant in Hokkaido, Japan has commenced production of high-temperature polysilicon TFT-LCDs (HTPS panels) for projection systems.
2003-04-01 TFT-LCD panels exhibit high aperture ratio
Seiko Epson Corp. has announced the development of HTPS TFT-LCD panels for use in next-gen projectors.
2004-01-01 TFT-LCD for new grounds, OLED next in line
TFT-LCD and PDP segments are rapidly expanding, while in fierce competition with each other.
2008-03-31 HTPS TFT panels offer SXGA+ resolution
Seiko Epson has started volume production of 2.54cm (diagonal) HTPS TFT panels that use the latest D7 design rule process to achieve higher aperture ratios, allowing them to offer SXGA+ resolution as well as increased brightness.
2008-01-30 HTPS TFT panels display WXGA content
Seiko Epson has begun volume production of 0.74-inch and 0.56-inch HTPS TFT panels for 3LCD front projectors compatible with WXGA.
2009-11-25 HTPS TFT color panel delivers QHD resolution
The 0.52-inch diagonal panel is suited for widescreen electronic viewfinders in professional camcorders.
2003-08-14 Epson to resume construction at Chitose plant
Seiko Epson Corp. has decided to resume construction at its liquid crystal panel manufacturing plant in Chitose, Hokkaido, Japan.
2008-02-22 Epson tips optical compensators for 3LCD panels
Seiko Epson's optical compensator made from inorganic materials further enhances the performance of 3LCD-type front projectors that use TN-type HTPS LCD panels.
2009-12-07 Epson Imaging shifts TFT LCD sales to Sony
Epson transfers assets of its small- and medium-sized TFT LCD business to the Sony Group as agreed upon in June this year.
2006-09-25 Consortium formed to promote microdisplay-based TVs
Arisawa, Seiko Epson, Texas Instruments and JVC have teamed to establish the Micro Device Display Consortium, to promote the features and advantages of microdevice display projection TVs.
2005-09-27 Strained silicon to take IEDM spotlight
With high-k dielectrics apparently delayed beyond the 45nm node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques as the main pathway to faster transistors.
2007-01-30 Sematech unveils solution for high-k CMOS devices
In its quest for developing dual metal gates for high-k CMOS devices, chip-making R&D consortium Sematech has demonstrated high-k/metal gate stacks to build high-performance nMOS and pMOS transistors in CMOS configuration.
2009-03-19 Power management for optimal design
This article describes a holistic approach for managing and optimizing the power in a design. Effective power management involves proper understanding the application of a chip, technology selection, design techniques and methodology.
2007-08-03 Organic solar cells to beat silicon-based alternatives
A new composite material for plastic solar cells formulated by Ohio State University researchers promise to beat today's inorganic silicon-based solar cells.
2007-04-02 IC firms announce gate material breakthroughs
Three entitiesIBM Corp., Intel Corp. and Sematechhave separately disclosed breakthroughs in the development of high-k dielectrics and metal gates for use in advanced gate stack applications in logic designs.
2007-09-17 High-k/metal-gate tools enhance 45nm designs
Applied Materials has rolled out a trio of tools for the high-k/metal-gate at 45nm: an atomic-layer deposition chamber for the company�s single-wafer Centura platform and various configurations for the Endura platform.
2008-01-25 45nm: What Intel didn't tell you
Some high points of Intel's 45nm HKMG technology are: high-k first, metal-gate-last integration; hafnium oxide (HfO2) gate dielectric (1nm EOT); and dual band-edge work function metal gates (TiN for PMOS; TiAlN for NMOS). The gate-last integration is one point that needs a bit of clarification in the Intel process flow.
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