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2003-10-02 WJ HBT amplifier eyes medium power market
WJ Communications Inc. has introduced a family of InGaP hetero-junction bipolar transistor medium power driver amps that are suitable for wireless apps.
2013-10-22 Thin film semiconductors to drive next-gen displays
NIMS researchers said the material cuts the power usage of displays, consuming about half of the power in rapidly diffusing smartphones, but also achieves higher frequencies to realise HD TVs.
2012-12-13 Study: InGaAs alternative to silicon at 22nm
MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22nm.
2003-12-10 SDK LEDs three times brighter
Showa Denko K.K. (SDK) has developed aluminum indium gallium phosphide (AlInGaP) LEDs that are three times as bright as existing ones. Designed for use in outdoor displays, illumination, mobile phones and automotive devices, the product features a flip chip structure and emits red and orange light with high levels of brightness compared with existing products on the market.
2005-02-02 Osram Opto lights up new LEDs in market
Osram Opto Semiconductors recently welcomed the New Year with a line up of new products that promise to light up a dimming display market.
2005-11-17 LEDs suit outdoor signs, signals
Agilent Technologies introduced what it touts as the industry's brightest 5mm LEDs for outdoor electronic sign and signal applications.
2004-08-23 Extra-bright white LEDs light up signals and signs
Agilent introduced a series of extra-bright white indium gallium nitride LEDs for electronic signs and signals.
2008-01-30 CIGS-based solar cells achieve efficiency breakthrough
Global Solar Energy has claimed an efficiency breakthrough for solar cells based on CIGS thin-film technology.
2005-05-12 Anadigics reveals HBTs, pHEMTs process on single InGaP GaAs die
Anadigics Inc. has unveiled its proprietary, patent pending, commercial process for integrating heterojunction bipolar transistors (HBTs) with psuedomorphic high electron mobility transistors (pHEMTs) on a single indium gallium phosphide (InGaP) gallium arsenide (GaAs) die.
2006-07-14 Anadigics PAs deliver performance, reliability to ZTE handset
Anadigics announced that it is supplying indium gallium phosphide heterojunction bipolar transistor power amplifiers to ZTE's F866 W-CDMA handset.
2004-11-12 Anadigics PA is 'industry's most highly integrated'
The new dual-band 4-by-4mm indium gallium phosphide heterojunction bipolar transistor power amplifier from Anadigics supports the 2.4GHz and 5GHz bands.
2005-08-08 Vishay to acquire CyOptics' Israel assets
Vishay Intertechnology Inc. announced that Vishay Israel Ltd has signed a letter of intent regarding the acquisition of the assets of CyOptics Israel Ltd, the Israeli subsidiary of CyOptics Inc.
2003-03-31 Mitsubishi to retain photonic, RF components in IC unit
Mitsubishi will retain its optoelectronic and microwave/RF businesses in a new Semiconductor Division within Mitsubishi Electric & Electronic USA Inc.
2004-01-16 Hybrid bipolar transistor emits light
Integrated optoelectronics could get a boost from the discovery of a bipolar transistor that emits light from its base region.
2014-04-23 GaAs cell scores 14% conversion efficiency with zinc oxide
Researchers modified the surface of a 9mm2 gallium arsenide solar cell through a chemical synthesis of thin films, nanostructures and nanoparticles to squash the sun's reflection and maximise the light absorbed
2016-03-02 Enhancing receiver sensitivity
Several advances in ADC design such as the new JESD204B standard, coupled with the new low power amplifiers, ultimately improve system noise performance.
2014-10-14 Creating more cost-effective GaN LEDs for homes
Plessey Semiconductors aims to be the first company to make energy-efficient LEDs for home lighting at a price that consumers will pay, and is using a technology made by Cambridge researchers.
2003-03-11 Bookham introduces latest etch process
Bookham Technology plc has developed an in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers that is said to result in 50 percent lower rates of burn-in degradation than can be obtained by current standard processes.
2002-02-12 AXT expands operations in China
Compound semiconductor substrates provider AXT Inc. is expanding its operations in China and has made investments in raw material extraction facilities.
2008-08-27 Web coating tool eases solar cell manufacturing
Veeco Instruments Inc. has introduced a line of web coating systems designed for manufacturing copper indium gallium selenide solar cells.
2012-03-21 TSMC Solar receives certifications
TSMC Solar Ltd, has received certifications from Underwriters Laboratories and International Electrotechnical Commission for a range of its copper indium gallium selenide PV modules.
2005-01-17 Tokyo group makes transparent transistors manufacturable
Now, a group at the Tokyo Institute of Technology claims to have solved these problems at room temperature by adding gallium and indium to ZnO, opening the gates to mass-production of transparent circuitry using industry-friendly sputtering, and at temperatures low enough for direct deposition on cheap, flexible polymers.
2012-06-05 Sharp crafts revolutionary IGZO tech for displays
This jointly developed new IGZO technology imparts crystallinity in an oxide semiconductor composed of indium, gallium and zinc.
2014-09-03 Samsung funds research for 7nm
The South Korean tech giant is financing Pennsyvania State University's work on III-V, which explores FinFET fabrication using the combination of silicon and indium gallium arsenide.
2011-03-09 RFMD breakthrough advances PV commercialization
RF Micro Devices has fabricated dual-junction PV cells that integrate gallium arsenide (GaAs) and indium gallium phosphide (InGaP) PV junctions, clearing the way for triple-junction structures.
2011-12-23 New material sought for PV apps
Imec and Flamac have combined capabilities to develop materials for solar cells as alternative to copper indium gallium and selenium.
2014-06-17 III-V MOSFETs rival Si-based transistors
The transistors are fabricated with indium-gallium-arsenide atop an indium-phospide substrate. They possess 20nm gate lengths, 0.5mA per micron width on-current and 100nA off-current when operating at voltages similar to Si.
2014-06-18 Hybrid circuit casts a spotlight on carbon nanotubes
The combination of carbon nanotube thin film transistors and other thin film transistors comprising indium, gallium and zinc oxide breeds circuits that can reduce power loss and increase efficiency.
2005-04-15 Anadigics to supply AWM6430 PAs for WiMAX apps
Anadigics Inc. has received production orders for the AWM6430 Indium Gallium Phosphide (InGaP) heterojunction bipolar transistor (HBT) 3.5GHz class AB power amplifier (PA) for fixed point worldwide interoperability used in microwave access (WiMAX) applications.
2004-11-02 Anadigics supplies SCDMA PAs to Xinwei Telecom
Anadigics Inc. is shipping its AWT6109 and AWT6114 indium gallium phosphide heterojunction bipolar transistor (InGaP HBT) power amplifiers (PAs) to Xinwei Telecom Technology Inc. in Beijing, China.
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