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2007-06-15 InGaP HBT vs. CMOS for mobile handset power amps
Selecting the right type of PA is one of the key decisions that can help achieve a compelling design that delivers a competitive advantage.
2000-09-27 HBT RFICs using AlGaAs, InGaP-GaAs and SiGe technologies for base station & repeater designs
HBT-based RF Integrated Circuits (RFICs) have gained wide acceptance by all major wireless and wireline equipment suppliers as the preferred technology where performance, high-linearity, efficiency and price competitiveness are a premium. This paper examines the trade-offs between various device technologies for base station applications.
2013-05-28 GCS unveils two InGaP HBT foundry processes
In addition to maintaining the super low phase noise performance offered by the company's D1 VCO process, the D5 InGaP HBT process offers an advantage of a wider (2x) frequency tuning range.
2010-11-22 Broadband gain blocks give high linearity via InGaP HBT technology
Avago Technologies announced two new high-linearity gain block amplifiers. The AVT-55689 and AVT-54689 gain blocks provide low current consumption and robust electrostatic discharge protection. These devices function in frequency bands from DC to 6000 MHz.
2004-09-14 Anadigics supplies Samsung with InGaP HBT PAs
Anadigics Inc. is supplying CHP1237 InGaP HBT (indium gallium phosphide heterojunction bipolar transistor) power amplifier (PA) modules (PA) to Samsung Electronics for the SPH-S2300 CDMA phone with embedded 3.2 megapixel digital camera.
2004-03-30 Anadigics ships InGaP, WLAN, PA units
Anadigics has begun shipping its InGaP, HBT, WLAN, power amplifiers (PAs) to a leading supplier of WLAN chipsets for PC notebooks.
2004-07-20 Anadigics ships InGaP PAs to LG Electronics
Anadigics Inc. is shipping production volumes of InGaP power amplifiers (PAs) to LG Electronics for the VX7000 CDMA handset with embedded digital camera.
2005-05-12 Anadigics reveals HBTs, pHEMTs process on single InGaP GaAs die
Anadigics Inc. has unveiled its proprietary, patent pending, commercial process for integrating heterojunction bipolar transistors (HBTs) with psuedomorphic high electron mobility transistors (pHEMTs) on a single indium gallium phosphide (InGaP) gallium arsenide (GaAs) die.
2003-10-02 WJ HBT amplifier eyes medium power market
WJ Communications Inc. has introduced a family of InGaP hetero-junction bipolar transistor medium power driver amps that are suitable for wireless apps.
2002-05-02 Sirenza launches fiber-optic TIAs
Sirenza Microdevices Inc. has announced the release of the SFT-0100 and SFT-5100 fiber-optic transimpedance amplifiers (TIA) for use in 10Gbps/12.5Gbps telecom and 10Gb Ethernet transceiver products.
2002-03-22 Sirenza acquires 12 percent stake in GCS
Sirenza Microdevices Inc. has acquired 12 percent stake in semiconductor wafer foundry service provider Global Communication Semiconductors Inc.
2002-02-21 Philips, TriQuint ink semiconductor technology pact
Philips Semiconductors, a division of Royal Philips Electronics, and TriQuint Semiconductor Inc. have signed a strategic partnership agreement that will allow Philips to access TriQuint's InGaP HBT 150mm wafer processing facilities.
2008-03-11 PAs suit base stations across all standards
RFMD has launched InGaP power amplifiers that address base station applications across all cellular standards and frequencies.
2006-11-22 GaAs Bluetooth power amp extends battery life
TriQuint has introduced a GaAs Bluetooth power amplifier that enables designers to offer 50 percent power added efficiency (PAE) for longer mobile device battery life.
2004-09-29 Anadigics supplies power amplifiers to Topping
Anadigics Inc., a supplier of wireless and broadband solutions, is providing AWT6146 InGaP HBT PAs to China-based Topping for its latest wireless platform.
2005-03-09 Anadigics supplies power amplifiers to LG Electronics
Anadigics Inc. is shipping production volumes of indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) power amplifiers (PAs) to LG Electronics for the VX8000 CDMA phone.
2004-09-20 Anadigics supplies PA modules to Lenovo
Anadigics Inc. is supplying Lenovo Group Ltd with InGaP HBT (indium gallium phosphide heterojunction bipolar transistor) PAs (power amplifiers) for their V858 camera phone.
2004-10-11 Anadigics supplies PA modules to China communications firm
Anadigics Inc. is shipping production volumes of its InGaP HBT (indium gallium phosphide heterojunction bipolar transistor) PAs (power amplifiers) to China-based Eastern Communications Co. Ltd (Eastcom), a communications company in China.
2004-09-27 Anadigics supplies Ningbo Bird with AWT6108 PAs
Anadigics Inc. is supplying AWT6108 7mm-by-10mm InGaP HBT GSM/GPRS PAs to Ningbo Bird Co. Ltd, a handset manufacturer in China, for its V5600 GSM handset.
2004-09-22 Anadigics supplies AWT6108 PAs in China
Anadigics Inc. is supplying AWT6108 InGaP HBT (indium gallium phosphide heterojunction bipolar transistor) PAs (power amplifiers) to Truetel Telecommunications Technologies Co. Ltd, a wireless products manufacturer in China.
2004-11-22 Anadigics rolls out highly-integrated dual-band PA
Anadigics launched a dual-band InGaP HBT power amplifier that supports the 2.4GHz and 5GHz bands.
2005-08-08 Anadigics PAs support AMPS/cellular, PCS frequency bands
Anadigics Inc. released a new family of dual-band InGaP power amplifiers (PAs) supporting the AMPS/cellular and PCS frequency bands.
2006-07-14 Anadigics PAs deliver performance, reliability to ZTE handset
Anadigics announced that it is supplying indium gallium phosphide heterojunction bipolar transistor power amplifiers to ZTE's F866 W-CDMA handset.
2004-11-12 Anadigics PA is 'industry's most highly integrated'
The new dual-band 4-by-4mm indium gallium phosphide heterojunction bipolar transistor power amplifier from Anadigics supports the 2.4GHz and 5GHz bands.
2005-06-13 Sirenza amplifiers target apps that need high gain and IP3
Sirenza has developed a family of 5V InGaP supply solutions in the SOT89 and SOT86 packages that can provide similar performance to its SBA 8V designs, but with improved operating robustness and RF efficiency
2011-03-09 RFMD breakthrough advances PV commercialization
RF Micro Devices has fabricated dual-junction PV cells that integrate gallium arsenide (GaAs) and indium gallium phosphide (InGaP) PV junctions, clearing the way for triple-junction structures.
2003-02-24 MMIC amps target 3G wireless
Hittite Microwave's HMC455LP3 and HMC461LP3 GaAs InGaP HBT MMIC amps are designed for wireless apps operating in the 1.7GHz and 2.5GHz range.
2003-08-08 Microsemi power amps back Atheros 3G designs
Microsemi Corp. has announced that two of its InGap HBT power amplifiers have been chosen for six different reference designs by Atheros.
2012-07-27 HBT power amp targets wireless infrastructure apps
RFMD's RFPA2089 is a single-stage InGaP HBT power amplifier that offers high-gain linear operation at a comparably low DC power geared for next generation radios requiring high efficiency.
2005-04-15 Anadigics to supply AWM6430 PAs for WiMAX apps
Anadigics Inc. has received production orders for the AWM6430 Indium Gallium Phosphide (InGaP) heterojunction bipolar transistor (HBT) 3.5GHz class AB power amplifier (PA) for fixed point worldwide interoperability used in microwave access (WiMAX) applications.
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