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2014-07-25 Topological insulator may enable power-efficient memory tech
The electrical currents flowing along the surface of topological insulators can be used to quickly flip a memory's magnetisation using the least possible current.
2002-10-22 NIST announces insulator material testing breakthrough
The U.S. Department of Commerce's National Institute of Standards and Technology has developed a method that will allow semiconductor manufacturers to test potential materials used as insulators for metal wires connecting devices on future microprocessors.
2007-11-06 Metal-insulator tech drives down cost of 60GHz WPAN
By switching to metal-insulator electronicswhich can be fabricated on standard CMOS lines atop ultracheap plastic substratesMotorola reports being able to drive down the cost of 60GHz WPAN to rival that of semiconductors.
2013-02-18 Insulator interfaces ease nanomaterial design
Researchers developed insulators called 'high-k dielectrics' that link heavier elements, such as hafnium or zirconium, into insulating oxide films touting exceptional charge-isolating capabilities.
2006-11-16 Use high-voltage drivers for large flat-panel displays
Designers are finding the optimum trade-off between strengths and limitations of available manufacturing technologies including HV-CMOS, BCD and silicon-on-insulator SOI to make high-voltage drivers in large flat displays.
2006-09-13 Tyco's new receptacle allows wire doubling
Tyco Electronics has announced its latest Ultra-Pod fully insulated FASTON receptacle that accepts 0.250 quick connect tabs.
2004-10-19 TSMC, Freescale to develop 65nm SOI technology
Taiwan Semiconductor Mfg Co. (TSMC) and Freescale Semiconductor Inc. have signed an agreement to jointly develop a next-generation silicon-on-insulator (SOI) transistor front-end technology targeted for the 65nm advanced CMOS process node.
2002-04-15 TSMC exec advocates slower steps between process nodes
Taiwan Semiconductor Mfg. Co. Ltd said it aims to deliver its first ICs based on 90nm design rules by the third quarter of this year, about one year ahead of the time frame cited in the industry's International Technology Roadmap for Semiconductors.
2005-02-11 Toshiba unveils high-density DRAM with floating-body cells
Toshiba Corp. has developed 128Mb silicon-on-insulator (SOI) DRAM with floating-body cells that the chip maker claims will help usher in embedded DRAM chips on SOI wafers.
2003-08-06 Toshiba memory cell technology eyes DRAM apps
Toshiba has developed what it claims to be the world's first memory cell technology for embedded DRAM system LSIs on SOI wafers.
2002-06-17 Toshiba enhances embedded DRAM with SOI wafer
Toshiba Corp. has accomplished a breakthrough in embedding DRAM on SOI wafers, which ends the DRAM performance degradation typical of such integration.
2014-08-04 The lowdown on batteries: Sodium sulfur
This battery technology is known for its very high energy density, excellent cycle life, low-cost materials, and high efficiency. However, it also comes with some disadvantages.
2006-01-01 Taiwan's ITRI innovates in emerging memory research
As process technologies move into deep-submicron arena, Taiwan makers realize that they have to develop their proprietary technologies in a bid to keep competitiveness.
2004-02-02 Strained SOI on the move to mainstream
The advantage of strained silicon lies in its electrical properties. The crystalline lattice of the top, electrically active layer of silicon is strained so that electric charges flow faster.
2012-10-23 ST, Soitec roll 28nm FD-SOI CMOS process thru CMP
ST's CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process that uses silicon substrates from Soitec is available for prototyping to universities, research labs and design firms.
2009-07-16 Soitec, IBM pioneer 22nm for 3D ICs
Soitec Group and IBM Corp. have teamed up to pioneer 22nm node silicon wafer substrate and bonding techniques that will enable wafer-level, 3D integration technology for next-generation ICs.
2006-10-31 Soitec, ARM team on SOI devt program
Soitec announced that they have entered into a joint-development agreement with ARM to support the future development of SOI libraries for the fabless/foundry arenas.
2006-07-10 Soitec to build 300mm fab in Singapore
Soitec SA announced that it plans to build a new production plant in Singapore and expand its existing production base in France.
2005-01-19 Soitec supplies AMD with UNIBOND SOI wafers
Soitec Group has inked an agreement with AMD for a long-term supply of UNIBOND silicon-on-insulator (SOI) wafers.
2008-11-11 Soitec opens 300mm wafer fab in Singapore
Soitec has inaugurated its new 300mm silicon-on-insulator wafer fab in new Pasir Ris Wafer Fab Park, Singapore.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2008-02-22 SOI consortium signs Applied Materials onboard
Applied Materials has joined the SOI Industry Consortium, a group aimed at accelerating silicon-on-insulator innovation into broad markets.
2003-12-22 SOI CMOS Technology for RF System-on-Chip Applications
This application note discusses SOI CMOS technology for RF system-on-chip applications
2006-01-13 Silicon wafers, SOI see strong growth
Driven by 300mm technologies, the worldwide silicon wafer market is projected to see strong growth over the next few years.
2014-10-10 Rising costs drive chip companies to alternate routes
The low cost of capital is fuelling M&A across all industries, and the rising cost and complexity of making chips is pouring gas on the fire in semiconductors.
2012-08-27 Research unveils dissipationless electronics
Revealing a new method to eliminate loss in electrical power transmission, researchers at RIKEN and the University of Tokyo found a solution based on a magnetic topological insulator.
2003-12-15 Renesas CMOS achieves high-speed operation
Renesas Technology Corp. has developed an SOI (Silicon On Insulator) CMOS device technology with a new structure that achieves faster operation while reducing the operating voltage.
2002-01-22 R&D consortium eyes system-in-package substrates
Five Japanese companies have formed an R&D association to develop materials and technologies for high-density substrates that will be used in system-in-package devices.
2006-06-14 Press-fit connectors suit high-reliability, high-cycle apps
Sullins has added pin-compliant solderless press-fit terminations to its edgecard connector family for high-reliability and high-cycle applications.
2015-07-08 Peregrine, GlobalFoundries unveil RF SOI 300mm platform
The UltraCMOS 11 uses a custom fabrication flow from GlobalFoundries' Fab 7 facility, and will be the foundation for Peregrine's high volume mobile products and SOI products for other applications.
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