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2002-02-18 Oki Electric ships fully depleted SOI LSIs
Oki Electric Ind. Co. Ltd has commenced commercial shipment in volume what it claims to be the first fully depleted silicon-on-insulator LSIs.
2011-10-20 Multilayer graphene seen to replace Si chips
A recent study shows interesting electrical properties of graphene by encapsulating it with boron nitride.
2005-08-11 Motorola, Phiar team on terahertz circuits
Motorola and Phiar Corp. have announced an agreement to create next-generation electronic circuits which can be incorporated with tiny antennas to deliver high-speed millimeter wave receive arrays.
2003-01-17 Motorola pare plants, seeks 300mm partner
In 2000, Motorola Inc.'s Semiconductor Products Sector had 27 front-end and back-end manufacturing sites. By the middle of this year, the company will have reduced that number to 10.
2007-06-12 Modules step up energy efficiency in home apps
Infineon Technologies AG has unveiled the new CiPoS modules designed to enable energy-efficient operation of consumer appliances such as washing machines and air conditioners and offers efficiencies of up to 94 percent.
2015-02-13 Mixed-signal ASIC cuts BOM for space apps
Atmel's rad-hard ATMX150RHA delivers up to 22 million routable gates, includes non-volatile memory blocks and supports 2.5/3.3/5V and high-voltage I/Os with pre-qualified analogue IP.
2004-10-26 Mitsubishi touts new low-k material
Mitsubishi claims to have developed an insulator material with a lower dielectric constant and increased robustness compared to current materials.
2005-05-16 Metal diode enables terahertz transceiver
A new diode promises to enable terahertz detectors that could easily be integrated into silicon circuits.
2008-08-18 Memory rests hope on floating-body cells
Intel Corp. revisited its research on floating-body cells (FBCs) for advanced cache designs in microprocessors during the 2008 Symposium on VLSI technology in Hawaii.
2004-01-26 MEMC to adopt SiGen SOI wafer technology
MEMC Electronic Materials Inc. has entered into a licensing agreement with Silicon Genesis Corp.
2002-03-12 Maintenance of conductivity cells
This application note explains the cleaning methods and maintenance of conductivity cells.
2008-03-12 Magma joins SOI consortium as technical member
Magma Design Automation has signed up with the SOI Industry Consortium as a technical member, joining 20 other companies.
2009-09-29 Low-cost 32bit CMOS processor runs at 1.5GHz
Applied Micro Circuits Corp. has rolled out a CMOS-based, 32bit processor, built around IBM Corp.'s Power Architecture.
2002-12-12 Intel, IBM joust 90nm technology at IEDM meet
Intel and IBM each came to the 2002 International Electron Devices Meeting claiming logic performance leadership at the 90nm.
2006-01-31 Intel tips 45nm process, demos chips
Intel disclosed initial details of its 45nm process. Dubbed P1266, the process incorporates copper interconnects, low-k dielectrics, strained silicon and other features.
2005-04-19 Intel may drop high-k gate dielectric, despite work on next version
Intel Corp. may drop the use of a high-k dielectric in the transistor gate stack at the 45nm manufacturing process node, according to Paolo Gargini, Intel Fellow and the company's director of technology strategy.
2010-06-21 Intel details floating-body R&D progress
Intel Corp. has delivered an update on its ongoing research on floating-body cells for advanced cache designs in microprocessors at the 2010 Symposium on VLSI Circuits.
2005-02-21 Intel claims first single-chip silicon laser based on SOI
In what could disrupt the photonics space, Intel Corp. on Wednesday (Feb. 16) described what it claims is the world's first silicon-based continuous-wave laser on a single chip - built around silicon-on-insulator (SOI) and other technologies.
2005-02-23 Intel claims first single-chip silicon laser based on SOI
Intel described what it claims is the world's first silicon-based continuous-wave laser on a single chipbuild around SOI and other technologies.
2002-08-15 Intel adopts strained silicon for 90nm process
Intel Corp. said that it will add strained silicon technology to its 90nm technology mix, and will use the process to make the Pentium 4 microprocessor code-named "Prescott" starting next year.
2010-03-25 IC firms join hands to drive SOI adoption
The SOI Industry Consortium has launched the "Ready for SOI Technology" program aimed to broaden access to energy-efficient silicon-on-insulator (SOI) technology for the electronics industry.
2009-09-24 IBM touts fastest 32nm SOI dynamic memory prototype
IBM's 32nm, silicon-on-insulator on-chip dynamic memory prototype tips better speed, reliability, power use.
2007-08-01 IBM jumpstarts ASIC world with 45nm line
IBM Corp. has rolled out its initial ASIC offering based on 45nm technology. The product line is the world's first ASIC that combines embedded DRAM and silicon-on-insulator technologies, according to the company.
2005-03-16 Hope floats for new DRAM
A potentially revolutionary 90nm DRAM technology, claiming gains in speed, size and power consumption, has been developed by a Swiss startup.
2005-04-29 Honeywell debuts rad-hard process in new foundry fab
Honeywell International has developed a radiation-hardened, 0.15?m process technology within its new 200mm foundry fab.
2002-12-23 Hitachi improves performance of wireless comm ICs
Hitachi Ltd has announced that its Central Research Laboratory has developed a technology that more than triples the capacitance density of metal-insulator-metal (MIM) capacitors in wireless communications ICs.
2011-06-24 High-voltage connectors suit industrial apps
ITT Interconnect Solutions has developed a new high-voltage connector series that offers a robust and shielded metal housing that is RoHS compliant.
2007-07-23 Half-bridge driver IC fits car comfort systems
Atmel Corp. has introduced the low-cost ATA6836 hex half-bridge driver IC with a high-voltage capability of up to 40V, making the device suitable for passenger car and 24V truck applications.
2011-02-01 Georgia Tech develops top-gate organic field-effect transistor for plastic electronics
Researchers at Georgia Tech have developed a top-gate organic field-effect transistor with a bilayer gate insulator that gives excellent stability and performance for use on plastic electronics.
2006-01-16 Freescale upends thinking on transistor channels
A research scientist proposes a transistor with a silicon channel structure resembling a T turned on its head.
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