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2015-07-29 Extending Moore's Law: Progress underscores SiGE, nm-ICs
Looking closer at the industry, much attention has been devoted to silicon-germanium (SiGe) heterojunction technology as the next step in building silicon-based ICs down below 10nm.
2013-12-30 Exploring monolithic 3D IC technologies
Learn about a relatively new approach that seems really promising: the Monolithic 3D IC technology.
2007-01-04 Epoxy resin features 'exceptional' flexibility
Master Bond's EP21TDC-2AN exhibits 31 percent elongation, said to be exceptional for a thermal conductive epoxy where the conductivity is 2.6W/m?K.
2002-11-04 EM Microelectronic to produce FD SOI-based chips
EM Microelectronic has announced that it is ready to start producing ultra-low voltage and ultra-low-power IC using FD SOI.
2003-07-25 DSP Architectures rolls 0.35?m processor
DSP Architectures has begun shipping its RHDSP24, a radiation-hardened, high-performance frequency domain digital signal processor.
2004-07-30 Design myths surround strained SOI
Whether strained silicon or strained SOI is used has little effect on the 90nm design side.
2002-11-25 Cypress obtains SOI technology from Honeywell
Cypress Semiconductor Corp. has acquired Honeywell's SOI know-how and will build its first chips using the high-performance transistor technology next year.
2013-03-08 Current transmitter suits extremely high temps
Here's a simple current transmitter that was tested at 210C and 225C.
2015-08-05 CoolCube 3D interconnect targets FinFET process
The research institute demonstrated the feasibility of CoolCube used to stack FinFET layers on its 300mm production line as well as with fully-depleted silicon-on-insulator manufacturing processes.
2007-10-10 Consortium formed to promote SOI technology
Nineteen industry manufacturers and suppliers have teamed up to launch the SOI Industry Consortium that aims to promote the benefits of SOI technology and reduce the barriers to its adoption into broad markets.
2005-06-01 Conductive pads eliminate air gaps between hot components
Laird introduces the T-gon CP200 and CP230 mid-grade thermally conductive insulator pads that target a wide variety of electronic apps
2003-10-15 Clare solar cell suits wireless, portable apps
Clare Inc. has announced the availability of its CPC1810 solar cell device and the introduction of a new solar cell technology.
2009-03-31 Circuit stacking handles complex 3D designs
Soitec SA has announced that its circuit stacking technology is ready for technology transfer and manufacturing.
2003-09-11 Chip technologies from IBM promise faster transistors
IBM announced two milestones that could enable the IT industry to produce higher performing, lower power devices in the near future.
2006-04-26 Chartered to supply CPU products for Microsoft's Xbox 360
Chartered signed an agreement with Microsoft for the manufacturing of CPU products for Microsoft's Xbox 360 game consoles.
2002-09-05 Chartered preps 0.185m SiGe process
Chartered Semiconductor Mfg will expand its foundry service offerings to the communications sector by rolling out a 0.185m SiGe BiCMOS manufacturing capability in 2H of 2003.
2005-02-02 Chartered commences customer prototyping in 300mm fab
Chartered Semiconductor Mfg has begun prototyping customer products at its first 300mm facility, Fab 7, at multiple advanced technology nodes.
2014-02-20 CeRAM gains ARM's attention
A new approach aims to be a contender for next-generation memory. This article tackles how it works.
2012-11-06 Cadence designs test chip for 14nm SOI FinFET
EDA vendor Cadence has come out with a test chip designed for checking parameters and IP at the 14nm node.
2004-02-16 Bivar shoulder insulators made from PPS
Designed to protect transistors and discretes, the shoulder insulators from Bivar are made from a UL rated 40 percent glass filled PPS.
2009-01-08 ASM, SAFC work on ultra high-k insulators
ASM International N.V. and SAFC Hitech have entered into a certified manufacturer and partnership agreement for certain atomic layer deposition (ALD) source materials for advanced ultra high-k insulators.
2007-06-12 ARM to field verification IP for on-chip comms
ARM plc will start sampling to its lead partners the AMBA Adaptive Verification IP for on-chip communication during the third quarter.
2006-11-06 ARM buys SOI tech company
ARM has acquired SOISIC, a company in Physical IP based on silicon-on-insulator (SOI) technology.
2004-03-17 Applied Materials, Soitec develop GeOI substrates for 45nm
Applied Materials Inc. and Soitec have entered into a strategic agreement to jointly develop advanced germanium-on-insulator (GeOI) and other related critical Ge-based processes designed to enhance transistor performance at the 45nm and beyond technology nodes.
2002-09-30 Applied Materials technology improves Soitec productivity
Soitec has achieved a reduction in cycle time for its 300mm Smart Cut SOI process as a result of enhancements made by Applied Materials Inc. in its Quantum II ion implant system.
2010-11-05 Analyst sees Intel doing SOI
Piper Jaffray & Co. forecast that Intel will embrace silicon-on-insulator technology at the 22nm process node.
2002-07-29 Analog receives ISO-14001 certification for its SOI fab
Analog Devices Inc. has received an ISO-14001 certification for its SOI substrate manufacturing facility in Belfast, Northern Ireland.
2004-04-22 AMD starts 90nm Opteron manufacturing in Germany
Advanced Micro Devices Inc. has begun using a 90nm-based silicon-on-insulator (SOI) manufacturing process at its Fab 30 in Dresden, Germany, according to Thomas Sunderman, a director of manufacturing technology within AMD's corporate manufacturing group.
2002-11-12 AMD outlines restructuring plan
Advanced Micro Devices Inc. is working on a broad restructuring plan that will slash $100 million from its quarterly operating costs in 2003, cut $100 million from its capital expenditures both this year and next, and entail significant layoffs by June.
2002-10-18 AmberWave cuts SiGe layer from strained-silicon process
AmberWave Systems Corp. claims to have worked out a form of strained silicon that removes the SiGe layer and provides an ultrathin silicon top layer to build high-performance devices.
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