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2003-01-20 Xinya terminal block operates to 120C
The 300 series of front-wire, inlet types of terminal blocks from Ningbo Xinya Electron withstand temperatures ranging from -30C to 120C.
2010-04-16 When will memristors be ready for prime time?
While memristors represent a potential revolution in electronic-circuit theory akin to the invention of the transistor, it will take a killer application to get it off the ground.
2014-09-02 What's switching: Nine takeaways from Hot Interconnects
The event sizzled with announcements and discussionsFacebook introduced its high-profile switch, critics attacked Ethernet's shortfalls, experts scrutinised Wi-Fi, and silicon photonics took centre stage.
2014-12-18 What's hot at IEDM 2014?
The 2014 International Electron Devices Meeting proved that Moore's Law is still alive. The event was a victory lap for Intel, which gave more details on the 14nm finFET process.
2003-11-14 Wave Tech connectors features card ejector
Wave Tech Co. Ltd has announced the availability of its SD series of SecureDigital memory-card connectors that comes with a card ejector.
2004-04-23 VLSI papers weigh 65nm, new circuits
While technologists look to 65-nanometer nodes, circuit designers by and large are two generations back.
2005-01-27 Via prepares to raise processor clock frequency to 2GHz
Via Technologies is preparing to improve the performance of its CPU family to achieve a 2GHz clock frequency this year, which would help allay some user complaints that its low-power benefits don't completely make up for its lack of horsepower.
2013-12-02 Vanadium dioxide smart glass boasts novel properties
Researchers from RIKEN developed a novel smart glass that can be activated to block infrared light while remaining transparent to visible light.
2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2014-09-25 Understanding electrostatic discharge
Here is an overview of electrostatic-discharge test models, failure modes, protection strategies, and Texas Instruments procedures to guard against ESD failures.
2013-06-17 UMC, IBM augment FinFET venture to 10nm
UMC will send researchers to work on the development of 10nm FinFET process technology with IBM.
2012-07-03 UMC looks to catch up with competitors with IBM deal
UMC looks to drastically improve its position with 20nm low power process with FinFET development license from IBM.
2007-05-09 UMC gears up for CPUs, NAND flash memory
United Microelectronics Corp. said it is in talks on a CPU production deal, but it is being circumspect on how it will attack the high-volume flash memory market.
2012-08-01 UMC first in producing FinFET process technology
UMC outdoes FinFET originator TSMC in producing a 20-nm FinFET process by 2014.
2003-08-11 UMC developing niche 130nm aluminum process
United Microelectronics Corp. said that it is developing an aluminum-based 130nm process for customers that don't need the speed of copper.
2013-10-18 Ultra-high-res display makers switch to metal-oxide TFTs
The expensive low-temperature polysilicon process has prompted the ultra-high-res display industry to move to metal oxide TFTs.
2011-02-04 Tyndall scientists create n-type junctionless transistor
With a 50nm channel length and a cross-section of about 8nm x 12nm, the new junctionless transistor is 30 percent more energy-efficient and could represent simpler manufacturing processes for transistors.
2006-06-01 Tyco barrier strips offer two mounting options
The BUCHANAN 0.375-inch centerline JC6 series dual-barrier strips from Tyco Electronics provide termination for wire and cable applications where panel mounting or PCB installation is necessary.
2005-04-28 TSMC unveils 65nm process, production due December
Foundry chip maker Taiwan Semiconductor Mfg Co. Ltd unveiled its 65nm manufacturing process at its Technology Symposium held in San Jose, California, declaring that first wafers processed with the rules are expected in December.
2010-04-15 TSMC skips 22nm, leaps to 20nm half-node
Taiwan Semiconductor Manufacturing Co. Ltd announced plans to skip the 22nm "full node" after the 28nm node and move directly to the 20nm "half node."
2003-07-11 Triquint, Agilent design kit to speed IC design
TriQuint Semiconductor and Agilent Technologies Inc. have introduced a next-gen design kit, which accelerates IC design and simulation.
2012-02-24 Transmit modules for 3G tout UMTS transmit/receive ports
The RF3235 and RF3237 are quad-band GSM/GPRS Class 12-compliant that deliver 3G solutions for entry platforms.
2005-07-06 Transistor's gate stack structure uses Hf-based, high-k dielectric
NEC Corp. has announced the development of a transistor featuring a new gate stack structure using a Hf-based, high-k dielectric and a metal gate electrode
2003-01-16 Tra-Con rolls epoxies for casting apps
Tra-Con has announced the release of three new epoxies that are suited for use in casting applications such as potting, damming, filling, and encapsulation.
2015-12-01 TowerJazz inks deal to buy Maxim's wafer fab
The agreement is expected to boost TowerJazz's global wafer manufacturing capacity, cost-effectively increasing production by nearly 28,000 wafers per month.
2014-07-17 Touchscreen allows perception of texture
Japanese researchers were able to use an electrovibration variant on a touchscreen prototype to create localised friction and thus cause the perception of texture.
2007-06-14 Toshiba develops tech for next-gen NAND flash
Toshiba Corp. has developed a technology that can meet the future demand for higher density NAND flash memory.
2003-11-25 Toshiba designer takes path of upward mobility
Delving into 'new transistor technology' is all in a day's work for Toshiba's Shinichi Takagi.
2005-12-14 Toshiba builds 128Mb capacitorless DRAM
Toshiba has fabricated a 128Mb capacitorless DRAM on an SOI wafer and verified operation of the chip.
2003-06-17 Toshiba announces latest embedded memory technology
Toshiba Corp. has developed and verified the operability of a memory cell technology for embedded DRAM system LSIs on SOI wafers.
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