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2006-07-10 Samtec unveils high-retention Type B USB
Samtec has expanded its I/O product line with the addition of a high retention Type B USB interface that complies with the class 1, Div II minimum withdrawal requirement of 15 Newtons.
2015-04-20 Samsung details 14nm FinFET strategy
The Korean company made significant headway when it shipped its first 14nm FinFET chip, beating TSMC to become the second chipmaker after Intel to pave the road for 14nm technology.
2011-02-24 Samsung chief cites challenges facing IC design
IC designers must address power consumption issues, the need for new transistor structure and memory types, delayed development of 3D TSV-based devices, and calls for circuit design breakthroughs.
2007-03-05 Samsung begins production of 1Gbit DRAM at 60nm
Capitalizing on the increasing demand for large density DRAMs, Samsung Electronics Co. Ltd has started mass production of the industry's 'first' 1Gbit DDR2 DRAM using 60nm process technology.
2005-10-20 Samsung announces 70nm-based 512Mb DDR2 SDRAM
Samsung Electronics announced that it has developed the first 512Mb DDR2 SDRAM using the 70nm process, which is said to be the smallest process technology yet applied to a DRAM device.
2006-03-16 Rx: New test techniques
New measurement approaches require faster and more efficient and reliable instrumentation and software.
2005-09-01 Road map rethinks process reductions
The ITRS draft scraps nodes and embraces 'cycles' for more incremental transitions.
2013-07-12 RF SOI wafers from Soitec receive mainstream attention
Soitec's technology enables highly tunable amplifiers to address multi-region requirements on a single platform while also reducing noise and interference.
2004-05-19 RF power detector spans incredible 1MHz to 8GHz
Analog Devices, a provider of high-performance semiconductors for signal-processing applications, has unveiled a major breakthrough in RF detection for wireless infrastructure equipment.
2003-05-05 RF CMOS process supports basestation integration
Austriamicrosystems is providing foundry service for a 0.35?m RF-CMOS process licensed from Taiwan Semiconductor Mfg Corp.
2014-09-12 RF antenna switch for smartphones offers LTE-A support
With TI's TaRF6 process, MOSFETs customised for RF switch applications have been developed and used in the SP12T RF antenna switch IC, leading to a performance of 0.42dB in insertion loss.
2012-04-11 Resistive RAM based on silicon dioxide
Researchers have developed a resistive-switching memory device based on silicon dioxide that shows a simpler material structure compared to those using metal-oxide films.
2008-11-26 Researchers fuse CMOS circuits, flexible substrates
Researchers claim to have invented a method that combines CMOS circuits on flexible substrates by transferring silicon circuits from a wafer onto the flexible polymer substrate.
2009-02-23 Researchers craft nanoscale one-stop shop platform
University of Pittsburgh researchers have created a nanoscale one-stop shop, a single platform for creating electronics at a nearly single-atom scale that could yield advanced forms of technologically important devices such as high-density memory devices, transistors and computer processors.
2013-06-17 Research team improves hexagonal material
Rice University and ORNL researchers have enhanced the growth of molybdenum disulfide semiconducting films for atom-thick circuits.
2011-05-11 Research shows strengths of superconducting FETs
The Brookhaven lab configured a normally insulating copper-oxide material in the same way as the channel of an FET and used molecular beam epitaxy to create an atomically perfect superconducting film.
2007-06-14 Renesas touts SOI SRAM tech for 32nm, beyond
Renesas has developed new technology to implement on-chip SOI SRAM in the 32nm node and finer processes.
2005-09-28 Renesas reports floating-body SOI RAM
Renesas Technology Corp. has developed a capacitor-less "floating-body" twin-transistor RAM (TTRAM) that would enable faster, more power-efficient embedded memory for system-on-chip (SoC) devices
2013-06-20 Rambus settles with ST, signs IP deal
Agreement covers FDSOI design, security, memory and interface technologies and settles all outstanding claims.
2010-04-07 Quest for the right road to lithography
The industry has long known that without a viable NGL solutionwhich most assumed would be EUVMoore's Law scaling would slow and the secular growth rate of the IC industry would decline.
2006-09-12 Qimonda engineers to report 58nm DRAM
Engineers from Qimonda AG are set to report on a 58nm DRAM manufacturing process technology at the International Electron Devices Meeting on December.
2013-07-19 Pure-CMOS RF switch tweaked for 2.4GHz Wi-Fi/Bluetooth
RFaxis' RFX333 single-pole triple-throw switch is optimised for wireless applications requiring high linearity and low insertion loss.
2016-02-01 Preventing common MEMS failure mechanisms
The first step in ensuring MEMS reliability is to avoid common pitfalls during the design and process development phase to assure a stronger and more reliable part-upon-marketplace introduction.
2012-02-06 Power supply ICs target smartphone displays
The STOD13AS integrates the step-up and inverting DC/DC converters needed to generate the positive and negative supplies on the same chip, noted Vishay.
2005-03-09 Power connectors provide high reliability
ITT Ind., Cannon offers a new Bayonet-style Powerlock connector series for field-installable power distribution systems.
2007-11-08 Physical sensors drive MEMS consumerization wave (Part 2)
ST's Benedetto Vigna notes that we are now living in the era of MEMS consumerization where mic, motion and pressure sensors are the main actors and he believes this trend will continue for the next five years.
2002-03-07 Philips, STMicro, TSMC ally on deep-submicron process work
Steeling themselves for the imposing challenge of developing process technology for deep-submicron ICs, three chip industry heavyweights said Tuesday they will pool resources to share the risk of process development for ICs below 0.15m.
2005-10-17 Philips addresses gain requirements of RF, microwave apps
Philips introduced QUBiC4X, the latest addition to its QUBiC4 family of high-performance BiCMOS process technologies.
2003-02-12 PGA adapter withstands >1.5kV overload voltage
Shenzhen Nuoling Electronic Co. Ltd's board-to-board type PGA adapter is rated at 60V, 3A and can withstand an overload voltage >1.5kV.
2013-04-03 Peregrine files another patent suit against RFMD
The suit filed in U.S. District Court for the Southern District of California claims that certain RFMD products infringe a newly issued Peregrine patent relating to SOI technology for RFICs.
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