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2010-06-11 STT-RAM geared to displace DRAM, flash
Grandis Inc. has updated its STT-RAM roadmap with some ambitious efforts in mind: It hopes to replace DRAM, and eventually, NAND, with its next-generation MRAM
2011-08-04 Samsung acquires STT-RAM vendor
Samsung says its acquisition of Grandis will contribute to its development of memory technology and become a key part of the company's global R&D network.
2015-06-09 Non-volatile RAM seen as replacement for DRAM, flash
Startup Nantero has raised $31.5 million that will be used to speed up development of its NRAM, sometimes known as Nano-RAM, for use in both enterprise and consumer applications
2006-01-01 Taiwan's ITRI innovates in emerging memory research
As process technologies move into deep-submicron arena, Taiwan makers realize that they have to develop their proprietary technologies in a bid to keep competitiveness.
2003-06-26 PRAM poised to re-enter memory race
Phase-change RAM, also known as ovonic or chalcogenide memory, appears to have gotten a new lease on life
2011-06-15 NEC, Tohoku University promote CAM-on-MRAM use
The use of magnetic RAM non-volatility with content addressable memories will enable the development of electronics that start instantly and consume zero electricity while in standby mode
2003-02-17 NEC develops 512KB MRAM
NEC Corp. has announced the development of a 512KB MRAM comprised of a simple CP-type cell structure that enables high-density data storage.
2006-07-18 NEC announces new MRAM cell tech
NEC claims to have succeeded in developing new magnetoresistive RAM cell technology suitable for high-speed memory macro embedded in next-generation system LSIs.
2006-10-16 MRAM joins memory market
With comparative advantages over other memory options, magnetoresistive RAM is expected to be the 'universal memory' of the future.
2008-04-02 MRAM gets spot in Siemens touchscreen HMI
Siemens has developed an industrial touchscreen HMI application using MRAM technology supplied by Freescale Semiconductor.
2004-07-08 MRAM developers on target for rollout within 2004
Near the end of the 1990s, a flurry of announcements promised a 2004 rollout for a radical approach to memory chip technology based on manipulating electron spin.
2002-06-15 Motorola develops 1Mb MRAM chip
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2010-08-23 MagSil turns MIT license into marketable MRAM
The company is using what it calls magnetic recording cell architecture to develop magnetoresistive RAM, the structure of which appears to be based on a traditional magnetic tunnel junction scheme.
2006-05-17 Magnetic metrology system accelerates storage devices development
KLA-Tencor unveiled the MRW3, its third-generation magnetic metrology system for the hard disk drive and semiconductor memory markets.
2004-06-28 Infineon, still in DRAM business, looks to recover its memory
Reaffirming its commitment to the memory business, Infineon Technologies AG flew in reporters from around the world to Dresden Tuesday, June 22, 2004 to highlight the breadth of its next-generation memory technology development - including the world's first 16Mb magnetoresistive RAM it recently developed with IBM.
2008-02-28 Freescale MRAM lifts off to space
MRAM products from Freescale Semiconductor have been selected for use in a magnetometer subsystem from Angstrom Aerospace, which will be launched into space on board the Japanese research satellite SpriteSat.
2007-07-12 Freescale expands MRAM product line
Freescale Semiconductor has expanded its magnetoresistive RAM (MRAM) family with a 3V, 4Mbit, extended-temperature-range, non-volatile RAM (nvRAM).
2012-10-17 Exploring split-gate thin-film storage
Based on nanocrystals, SG-TFS is touted to provide fast, efficient read/write operation in a reliable, economical and scalable technology.
2009-06-26 Domain wall marks MRAM for next-gen LSI
NEC Corp. and NEC Electronics Corp. announced an MRAM technology suitable for system LSI embedding.
2003-09-09 Cypress divests portion of stake in NVE
Cypress Semiconductor has sold a portion of its investment in NVE Corp, a developer of spintronics technology.
2007-03-13 Chinese Academy of Sciences unveils MRAM tech
A research team led by Professor Han Xiufeng from the Chinese Academy of Sciences Institute of Physics has developed a novel type of magnetoresistive RAM.
2013-02-27 A primer on FRAM (Part 1)
Know the history and basic operating principles of ferroelectric RAM
2007-03-16 New flash contender emerges
Startup Grandis will work to develop embedded and standalone devices based on STT-RAM's method for data writes in a bold attempt to commercialize the technology
2006-08-16 MRAM ushers in era of new memory tech
For the past 11 years, Saied Tehrani and the MRAM development team he directs at Freescale Semiconductor's Arizona facility have worked on a new type of IC memoryone using magnetic resistance instead of charge storage.
2006-11-01 IBM plots storage tech roadmap
IBM Corp. has partnered with Infineon spin-off Qimonda AG and Taiwan's Macronix International Co. Ltd on phase-change RAM
2010-04-21 16Mbit MRAM set to displace SRAM
Everspin Technologies Inc. is sampling a 16Mbit magnetoresistive random access memory (MRAM) device designed to displace battery-backed SRAMs or associated discrete solutions
2002-09-24 Toshiba proposes double-junction MRAM structure
Toshiba Corp. has developed a magnetic RAM with a double-tunnel-junction structure to boost its MRAM product density to the 1Gb
2011-05-19 Russia, Crocus ink $300M MRAM production deal
Under the $300 million deal signed with Rusnano, Crocus will set up a Russian joint venture to manufacture ICs for MRAM using 90nm process technology.
2015-01-29 NVM battle: When will choices be made?
In the long term, STTMRAM is sure to be the only candidate to substitute DRAM thanks to its high endurance. RRAM is sure to substitute NAND thanks to its high scalability/low cost.
2007-07-02 MRAM enters embedded arena
Improvements in MRAM will help widen the spectrum of potential applications, ensuring a greater push into the embedded-microcontroller market.
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