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2007-11-21 Magnetic sensors claim 'thinnest' profile
NEC announced that it has successfully developed and commenced full-scale production on magnetic sensors, claimed to be the world's thinnest at 1mm x 1.6mm x 0.35mm.
2006-01-01 Taiwan's ITRI innovates in emerging memory research
As process technologies move into deep-submicron arena, Taiwan makers realize that they have to develop their proprietary technologies in a bid to keep competitiveness.
2004-12-20 Renesas develops MRAM technology
Renesas Technology Corp. has developed a high-speed, high-reliability MRAM (magnetoresistive random access memory) technology for SoC (system-on-a-chip) use
2008-02-28 Freescale MRAM lifts off to space
MRAM products from Freescale Semiconductor have been selected for use in a magnetometer subsystem from Angstrom Aerospace, which will be launched into space on board the Japanese research satellite SpriteSat.
2009-06-26 Domain wall marks MRAM for next-gen LSI
NEC Corp. and NEC Electronics Corp. announced an MRAM technology suitable for system LSI embedding.
2013-05-22 Imec, Globalfoundries team up for high-density memory
The organisations aim to advance spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology that is presented as an alternative to SRAM and DRAM
2012-11-19 Imec, Canon Anelva team up on STT-MRAM
The research focusing on spin-transfer torque magnetoresistive random access memory will run in the framework of Imec's R&D program on advanced emerging memory technologies
2010-04-21 16Mbit MRAM set to displace SRAM
Everspin Technologies Inc. is sampling a 16Mbit magnetoresistive random access memory (MRAM) device designed to displace battery-backed SRAMs or associated discrete solutions
2005-09-27 Strained silicon to take IEDM spotlight
With high-k dielectrics apparently delayed beyond the 45nm node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques as the main pathway to faster transistors.
2011-04-20 Researchers: Vacancies can create magnetic graphene
Hoping to find new graphene applications such as magnetic sensors, researchers claim that graphene can be doped for magnetism by introducing empty spaces into its otherwise perfect hexagonal pattern.
2003-06-26 PRAM poised to re-enter memory race
Phase-change RAM, also known as ovonic or chalcogenide memory, appears to have gotten a new lease on life.
2006-08-01 Perpendicular media find drive
Seagate Technology LLC rolled out nine new hard disks using perpendicular recording technology, including its first-ever 1.8-inch drive. It also announced its first hybrid flash/hard disk for notebooks and an upgraded approach to drive encryption.
2004-12-16 Memory alternatives wait for flash to flame out
Memory makers are waiting for flash to die down in the hope to provide new alternatives in the future.
2007-08-16 Managing embedded memory at 45nm
Embedded designers will face major challenges associated with embedded memory at or around the 45nm technology node. Industry leaders have already declared that conventional SRAM, flash and DRAM will encounter scalability and endurance issues at those feature sizes.
2007-03-05 Is MRAM right for your consumer embedded device application?
Available memories on the market have inherent limitations that prevent them from offering the best memory features. However, with further refinement, MRAM could someday be hailed as the universal memory.
2010-12-09 ICs seen to scale via 3D TSV
Chip scaling is becoming harder and costlier entering into the sub-20nm realm, thus, the industry is looking for new materials, structures and processes, says a technologist from Samsung.
2007-10-18 Hitachi claims 'smallest' read-head tech for Tbyte drives
Hitachi and Hitachi GST have developed what they claim as the world's smallest read-head technology for HDDs, which will quadruple current storage capacity limits to 4Tbytes on a desktop hard drive and 1Tbyte on a notebook hard drive.
2012-10-17 Exploring split-gate thin-film storage
Based on nanocrystals, SG-TFS is touted to provide fast, efficient read/write operation in a reliable, economical and scalable technology.
2013-01-10 Everspin exhibits ST-MRAM viability for SSD
The reduced switching current and simplified circuitry of ST-MRAM enables it to support the write bandwidth required for DDR3 performance, according to Everspin Technologies.
2006-05-16 Advanced memories still struggle in mobiles
Memory research managers themselves have scaled back their rhetoric in the past, avoiding the term universal memory altogether. Freescale, Intel and Texas Instruments are dealing with memory designs.
2013-02-27 A primer on FRAM (Part 1)
Know the history and basic operating principles of ferroelectric RAM.
2015-09-10 60 start-up companies to watch in 2015
EE Times has selected 30 start-up companies to come on to version 16.1 of its list of 60 firms that are worth keeping an eye on. Readers are welcome to nominate their own emerging companies.
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