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What is Magnetoresistive Random Access Memory (MRAM)?
Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology that has been under development since the 1990s. Continued increases in density of existing memory technologiesnotably flash RAM and DRAMhave k
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2006-01-01 Taiwan's ITRI innovates in emerging memory research
As process technologies move into deep-submicron arena, Taiwan makers realize that they have to develop their proprietary technologies in a bid to keep competitiveness.
2011-12-13 Sensor integrates amplifier IC in SO8 package
NXP's KMZ60 analog AMR angle sensor saves system level costs for brushless DC motors in automotive and industrial applications.
2004-12-20 Renesas develops MRAM technology
Renesas Technology Corp. has developed a high-speed, high-reliability MRAM (magnetoresistive random access memory) technology for SoC (system-on-a-chip) use.
2003-11-10 Philips, Siemens sensor system improves fuel efficiency
Royal Philips Electronics has developed a magnetoresistive sensor that is designed for automotive angular measurement applications including electronic throttle control (EGAS) and variable valve timing (VVT).
2013-01-22 NXP sees rich prospects for automotive future
NXP has begun prioritizing the automotive industry, striving to enable all electronic communication to, from and within the vehicle in a reliable, secure and efficient manner.
2012-10-18 No slowing down for car sensor market this year
IHS revealed that revenue in 2012 for semiconductor magnetic sensors in the automotive space is forecast to reach $812.2 million, up 11 per cent from $731.3 million in 2011.
2003-02-17 NEC develops 512KB MRAM
NEC Corp. has announced the development of a 512KB MRAM comprised of a simple CP-type cell structure that enables high-density data storage.
2006-07-18 NEC announces new MRAM cell tech
NEC claims to have succeeded in developing new magnetoresistive RAM cell technology suitable for high-speed memory macro embedded in next-generation system LSIs.
2002-08-21 Nanoscale metal deposition eyed for MRAMs
A new technique for fabricating magnetic tunnel junctions would enable MRAMs to be economically manufactured, according to researchers here at the Pacific Northwest National Laboratory.
2006-08-16 MRAM ushers in era of new memory tech
For the past 11 years, Saied Tehrani and the MRAM development team he directs at Freescale Semiconductor's Arizona facility have worked on a new type of IC memoryone using magnetic resistance instead of charge storage.
2007-05-01 MRAM puts new spin on process, fab strategy
According to Freescale, the major advantage of its MRAM technology is that it is a back-end addition to conventional CMOS and is therefore suitable for embedded use. The Freescale MRAM cell has multilayer MTJs placed diagonally between two high-current write line conductors, which are formed in metal 4 and metal 5, and arranged at right angles to each other.
2006-10-16 MRAM joins memory market
With comparative advantages over other memory options, magnetoresistive RAM is expected to be the 'universal memory' of the future.
2008-04-02 MRAM gets spot in Siemens touchscreen HMI
Siemens has developed an industrial touchscreen HMI application using MRAM technology supplied by Freescale Semiconductor.
2003-01-17 Motorola pare plants, seeks 300mm partner
In 2000, Motorola Inc.'s Semiconductor Products Sector had 27 front-end and back-end manufacturing sites. By the middle of this year, the company will have reduced that number to 10.
2002-06-15 Motorola develops 1Mb MRAM chip
2010-08-23 MagSil turns MIT license into marketable MRAM
The company is using what it calls magnetic recording cell architecture to develop magnetoresistive RAM, the structure of which appears to be based on a traditional magnetic tunnel junction scheme.
2007-11-21 Magnetic sensors claim 'thinnest' profile
NEC announced that it has successfully developed and commenced full-scale production on magnetic sensors, claimed to be the world's thinnest at 1mm x 1.6mm x 0.35mm.
2006-05-17 Magnetic metrology system accelerates storage devices development
KLA-Tencor unveiled the MRW3, its third-generation magnetic metrology system for the hard disk drive and semiconductor memory markets.
2007-03-29 Liquid level sensors target production equipment
MTS Systems has introduced a line of liquid level sensors using lower-cost variations of its Temposonics magnetostrictive sensing technology for heavy production equipment.
2004-06-28 Infineon, still in DRAM business, looks to recover its memory
Reaffirming its commitment to the memory business, Infineon Technologies AG flew in reporters from around the world to Dresden Tuesday, June 22, 2004 to highlight the breadth of its next-generation memory technology development - including the world's first 16Mb magnetoresistive RAM it recently developed with IBM.
2008-02-28 Freescale MRAM lifts off to space
MRAM products from Freescale Semiconductor have been selected for use in a magnetometer subsystem from Angstrom Aerospace, which will be launched into space on board the Japanese research satellite SpriteSat.
2007-07-12 Freescale expands MRAM product line
Freescale Semiconductor has expanded its magnetoresistive RAM (MRAM) family with a 3V, 4Mbit, extended-temperature-range, non-volatile RAM (nvRAM).
2006-07-17 Freescale announces commercial availability of MRAM
The first commercial magnetoresistive random access memory (MRAM) device is now in volume production and available from Freescale Semiconductor.
2002-03-25 ERSO, TSMC to jointly develop MRAM technology
The Electronics Research and Service Organization of the Industrial Technology Research Institute and Taiwan Semiconductor Mfg. Co. Ltd have signed a joint R&D agreement for magnetoresistive random access memory technology.
2001-04-04 Electronic compass design using KMZ51 and KMZ52
This application note describes how to realize electronic compass systems (signal conditioning and direction determination) using Philips Semiconductors' KMZ51 or KMZ52 magnetoresistive sensors.
2009-06-26 Domain wall marks MRAM for next-gen LSI
NEC Corp. and NEC Electronics Corp. announced an MRAM technology suitable for system LSI embedding.
2003-09-09 Cypress divests portion of stake in NVE
Cypress Semiconductor has sold a portion of its investment in NVE Corp, a developer of spintronics technology.
2002-12-11 Contactless Angle Measurement using KMZ41 and UZZ9000
This application note describes how to build a MR based measurement system using the KMZ41 magnetoresistive sensor and the UZZ9000 sensor signal conditioning IC.
2002-12-20 Contactless angle measurement using KMZ1 and UZZ9001
This application note describes how to build a MR-based measurement system using the KMZ41 magnetoresistive sensor and UZZ900 sensor signal conditioning IC.
2007-03-13 Chinese Academy of Sciences unveils MRAM tech
A research team led by Professor Han Xiufeng from the Chinese Academy of Sciences Institute of Physics has developed a novel type of magnetoresistive RAM.
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