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2014-03-19 Cell metallisation tech drives system costs down
GTAT's technology utilises a flexible grid in place of silver bus bars, minimising the consumption of expensive silver paste.
2014-05-08 3D chip-making technique utilises metallisation layers
The technique fabricates active devices interleaved between the metallisation layers atop a standard CMOS die, eliminating the expense of vertically stacked transistors or of stacking dies with TSVs.
2014-09-25 Understanding electrostatic discharge
Here is an overview of electrostatic-discharge test models, failure modes, protection strategies, and Texas Instruments procedures to guard against ESD failures.
2013-12-30 Exploring monolithic 3D IC technologies
Learn about a relatively new approach that seems really promising: the Monolithic 3D IC technology.
2013-12-27 Simplify LED light assemblies with nano-ceramics
The latest nano-ceramic materials are now posing a challenge to existing metal-backed PCB technologies by providing a better combination of high performance and competitive cost.
2014-03-25 Significance of UHF RFID to Industry 4.0
Find out how RFID can become a low-cost wireless alternative to Bluetooth or ZigBee.
2014-02-11 Sensirion offers micro-scale liquid flow sensors
The liquid flow series LPP10 and LPG10 are based on planar microfluidic substrates and are available with a glass (LPG10) or a plastic (LPP10) packaging.
2014-04-10 Self-cooling chips operate up to 300°C
A team at Fraunhofer IMS developed a type of high-temperature process that allows the fabrication of compact microchips that can keep their cool even at 300°C.
2016-04-11 Probing ReRAMs: Forming scaling, quantised conductance
Learn about the new ReRAM challenges as an IMEC team have formed and characterised the electrical conductance and topology of some of the smallest ReRAM filaments ever reported.
2013-01-03 Peek at the future of aerospace brazing
New brazing alloys enhance thermal barrier in jet engine hot section.
2013-10-24 Microsemi's VDMOS MOSFET ready for ISM applications
Microsemi's two new high-frequency vertical diffusion metal oxide semiconductors MOSFETs offer excellent stability and low intermodulation distortion.
2013-12-13 Latest developments in 3D IC technologies
Here's a look at the various forms of 3D IC technology, starting with the simpler incarnations and culminating in today's start-of-the-art implementations.
2015-03-09 IoT drives chip packaging innovation
The need for high performance multi-functional devices in a single package is pushing the industry to innovate in multi-chip packaging. This high level of integration has presented huge challenge.
2014-05-30 Ionised PVD system facilitates void-free fill for TSVs
The system from Applied Materials employs improved ion density, directionality, and tunable energy to deposit barrier and copper seed layers inside high aspect ratio TSVs.
2014-09-12 Intel plans to extend Moore's Law to 7nm
Chipmakers generally don't expect the much-delayed extreme ultraviolet lithography in time for 10nm chips, but many still hold out hopes it could be ready for a 7nm generation.
2016-02-15 How to prevent latchup in CMOS chips
Latchup becomes a real problem when you try to power up and down different sections of your design to save power. Find out how to address this issue.
2016-04-25 Guard against latchup in CMOS chips
Find out how to deal with latchup, which becomes a real problem when you try to power up and down different sections of your design to save power.
2015-07-28 Guard against capacitor corrosion for long life apps
Advanced EMI suppression film capacitors that can survive harsh environments for 15 years or more enable designers to implement economical circuitry in cost-sensitive equipment such as smart meters.
2015-07-03 Examining 3D embedded substrate power packaging
Here is a look at 3D embedded substrate power packaging technologies, which will be increasingly deployed in everything from cell phones to hybrid electric vehicles.
2015-07-15 E-band cost, reliability concerns in MMIC packaging
Traditional semiconductor packaging approaches either cost too much or suffer from signal integrity issues. However, new techniques are becoming available that can address these problems.
2015-07-30 Diamond substrate unleashes GaN potential
Diamond substrates and heat spreaders enable GaN devices to operate near its peak power output without degradation in lifetime.
2010-09-21 Cold-active plasma technology optimizes material deposition process
Reinhausen uses plasma gas to layer nanopowders on plastics
2014-05-14 Cobalt-sheated lines prevent electromigration in the 10nm
Applied Materials' platform encapsulates copper features in cobaltan element that adheres well to both the TaN barrier and copperto prevent voids and electromigration.
2014-02-18 Capacitive touch switches resist wear
Noritake's touch switch features a flat glass surface with a metallic finish, and low impedance.
2014-01-24 Apple taps Samsung 28nm HKMG process for A7
Chipworks' Sinjin Dixon-Warren dissects the front end of line transistor structure used in the A7, with comparison to advanced technologies used by both Apple and other vendors.
2015-04-08 Altera delivers UBM-free WLCSP
Altera, together with TSMC, designed an ultra-thin, UBM-free wafer-level chip scale package for Altera's MAX 10 field programmable gate arrays.
2008-06-13 Alchimer picks Lenix as Korea representative for TSV
Alchimer, a provider of nanometric films for through-silicon via (TSV) metallization, has appointed Lenix as its representative in Korea.
2013-08-27 Achieve successful timing closure
Find out how to derive design margins for successful timing closure.
2016-01-19 A tech walkthrough of metal gate I/O transistors
The input/output (I/O) transistor is the workhorse of the metal gate CMOS transistors, yet noone really talks about it. In this article, we'll see why it is worth a look.
2015-05-14 A closer look at Samsung's 14nm node
Samsung has lagged Intel in the release of its process nodes, especially with the 20nm node that was two years behind Intel. Remarkably, Samsung has shrunk the lag for its 14nm to about six months.
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