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2003-01-30 RF Micro purchases Veeco molecular beam epitaxy system
Veeco Instruments Inc. has received an order from RF Micro Devices Inc. for a GEN2000 molecular beam epitaxy system.
2011-05-11 Research shows strengths of superconducting FETs
The Brookhaven lab configured a normally insulating copper-oxide material in the same way as the channel of an FET and used molecular beam epitaxy to create an atomically perfect superconducting film.
2001-09-07 In-situ cathodoluminescence
This application note explains in-situ cathodoluminescence (CL) as a technique for determining film composition, optical quality and doping levels of MBE (Molecular Beam Epitaxy) grown group III nitride films.
2003-03-12 New center targets epitaxial technology advancement
Veeco Instruments Inc. has opened a 15,000-square foot epitaxial Process Integration Center adjacent to its molecular beam epitaxy manufacturing operations in Minnesota, U.S.A.
2012-06-11 IQE acquires RFMD MBE unit for $27M
IQE plc will acquire RF Micro Devices Inc.'s molecular beam epitaxy (MBE) epitaxial wafer growth manufacturing unit.
2003-11-05 Veeco acquires Emcore business
Veeco Instruments Inc. has purchased Emcore Corp.'s TurboDisc Metal Organic Chemical Vapor Deposition (MOCVD) business.
2005-09-16 Ultrasensitive quantum lasers sniff toxins
A Georgia Tech researcher develops an ultrasensitive spectrometer using quantum cascade lasers, waveguides and detectors.
2012-12-13 Study: InGaAs alternative to silicon at 22nm
MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22nm.
2014-03-17 Silicon photonics evolve into 1.3μm quantum dot lasers
The quantum dot lasers developed by UCSB researchers are expected to facilitate the integration of low-cost, multi-channel laser devices with CMOS driver circuits.
2002-02-28 Semiconductor material plant breaks ground in Beijing
Beijing New Building Material Co. Ltd has established a new company named Beijing New Material Incubator Co. Ltd located in Beixin Material Park, Zhong Guan Cun, Beijing, China.
2014-09-03 Samsung funds research for 7nm
The South Korean tech giant is financing Pennsyvania State University's work on III-V, which explores FinFET fabrication using the combination of silicon and indium gallium arsenide.
2007-04-02 Researchers pitch nanowires as litho replacement
HP Lab and a trio of academic labs have scored advances that will make it easier to use nanowires as a replacement for lithography in semiconductor manufacturing, potentially taking chipmaking to the angstrom scale.
2009-04-24 Research takes step towards ferroelectric transistors
A team of researchers claims that if the atomic lattice of strontium titanate is compressed to match that of silicon, could make it a good candidate for ferroelectric transistors.
2011-03-25 One-bit digital counter integrates GaPN LEDs, silicon FETs
Toyohashi Tech researchers have successfully made a one-bit counter circuit optoelectronic IC with an optical output consisting of silicon FETs integrated with gallium phosphide nitride LEDs on a single chip.
2014-04-16 Nanowire manipulation yields boosted optical devices
Years of research at the Norwegian University of Science and Technology have resulted in developments including hexagonal crystal structure in the GaAs nanowires, which facilitates material effectiveness in solar cells and LEDs.
2006-08-16 MRAM ushers in era of new memory tech
For the past 11 years, Saied Tehrani and the MRAM development team he directs at Freescale Semiconductor's Arizona facility have worked on a new type of IC memory!one using magnetic resistance instead of charge storage.
2014-09-15 Is GaAs the new future of IC architecture?
Gallium arsenide enables high performance and novel IC architecture due to its ability to integrate optical circuitry capabilities and improve transistor performance.
2012-03-15 Imec, Riber continue team up on next-gen III-V CMOS
Through the collaboration with Riber, Imec can integrate the power of UHV-systems into state-of-the-art semiconductors production equipment on large diameter wafers.
2005-10-24 IMEC proposes sandwich substrate to extend CMOS era
Researchers at IMEC have proposed that multi-layer substrates comprised of gallium arsenide grown over germanium grown above silicon, together with novel gate dielectrics and metal gates, could be the best way to extend the use of CMOS into the sub 45nm device era.
2012-09-11 ICs grown on graphene, patented
Researchers from a Norwegian university have patented a technology which enables the growth and characterization of GaAs nanowires on graphene.
2008-05-23 Harvard prof develops room-temp THz laser
A Harvard University professor has demonstrated a heterodyning method cast in nonlinear materials that mixes two easy-to-generate optical frequencies spaced apart at the desired terahertz frequency, resulting in a room-temperature terahertz laser.
2006-03-16 GaAs dielectric points past silicon
Freescale Semiconductor's laboratory recently announced that it has cracked a 40-year-old puzzle!how to deposit a defect-free dielectric on GaAs.
2009-07-08 Coming soon: Carbon chips
Carbon!the basis of all organic compounds!seems destined to displace silicon as the material of choice for future semiconductors.
2008-05-26 Bug cracks photonic-crystal mystery
University of Utah researchers studying the Brazilian beetle says the bug's eerie iridescence is evidence of its unique photonic lattice structure!called the "champion" architecture in photonic circles.
2002-05-17 British wafer maker weighs site in Singapore
Compound semiconductors, including proprietary "strained" silicon technology, could be a part of a planned foundry in Singapore if U.K. epitaxial wafer supplier IQE plc opts to locate its Asia-Pacific headquarters in the city-state.
2008-07-16 Beyond supercool: room-temperature THz lasers
A heterodyning method, cast in nonlinear materials, mixes two optical frequencies whose difference is the desired THz frequency, resulting in a room-temperature THz laser. This may act as scanner like x-rays safe for people and can detect hidden weapons, toxic materials present in the air or distinguish improvised explosive devices at a distance.
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