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2003-04-23 Xyratex uses MoSys memory on next-gen products
U.K.-based Xyratex Technology Ltd has licensed MoSys Inc.'s 1T-SRAM embedded memory technology.
2006-11-20 VeriSilicon, MoSys partner to expand 1T-SRAM adoption
VeriSilicon Holdings Co. Ltd and MoSys Inc. are joining efforts to further increase the adoption of MoSys' proprietary 1T-SRAM technology by providing seamless access to the patented technology.
2002-11-22 UMC licenses MoSys 1T-SRAM
United Microelectronics Corp. has licensed MoSys Inc.'s 1T-SRAM technology as part of the foundry's IP strategy to offer SoC designers memories that are more tightly aligned with its processes.
2004-03-25 Synopsys to pay all cash for MoSys
Faced with a declining stock price following its offer to purchase embedded memory provider MoSys for $432 million in stock and cash, Synopsys Inc. has switched to a $13.50 per share all-cash offer.
2004-03-31 Synopsys CEO defends MoSys acquisition
Responding to user questions on a variety of topics, Aart de Geus, Synopsys CEO, defended his company's proposed acquisition of MoSys in a new E-Mail Synopsys User's Group (ESNUG) mailing.
2003-04-30 Sony integrates MoSys memory into products
Sony Semiconductor Kyushu Corp. has signed a licensing agreement with MoSys Inc.
2007-03-19 SMIC, MoSys expand foundry agreement
MoSys has extended its existing agreement with China's Semiconductor Manufacturing International Corp. to include MoSys' new high-density embedded flash memory IP.
2003-05-21 SMIC silicon verifies MoSys memory technology
Semiconductor Mfg Int. Corp. has announced that they have silicon verified MoSys Inc.'s 1T-SRAM memory technology on its 0.185m standard logic process.
2003-12-18 SANYO licenses MoSys embedded memory
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2010-02-02 ROHM, MoSys ink 1T-SRAM license deal
MoSys Inc. announced that ROHM Co. Ltd has signed a major technology license agreement for MoSys' 1T-SRAM embedded memory technology.
2003-02-17 NEC, Mosys push bounds of embedded DRAM
NEC Electronics introduces its DRAM capacitor as Mosys launches its 1T-SRAM-Q technology designed to usher the next phase of on-chip memory evolution.
2005-03-30 NEC to use Mosys embedded memory with 90nm process
Monolithic System Technology Inc. (MoSys) has renewed its partnership with NEC Electronics licensing the Japanese chip company to embed MoSys' embedded DRAM technology into high volume semiconductor devices for consumer applications manufactured using 90nm manufacturing process technologies.
2002-10-17 NEC extends license of MoSys 1T-SRAM technology
NEC Corp. has extended its license agreement with MoSys Inc., concerning the latter's 1T-SRAM memory technologies.
2002-09-19 National Semiconductor licenses MoSys memory technology
National Semiconductor has licensed MoSys Inc.'s 1T-SRAM embedded memory technology to enable the incorporation of National's memory blocks into their future cellular baseband SoCs.
2010-08-11 MoSys, Radiocomp, GDA collaborate on wireless Serdes
MoSys, Radiocomp and GDA Technologies have joined together to deliver a complete end-to-end connectivity solution, focusing on the 3GPP long term evolution (LTE) and 4G cellular base station component market.
2005-04-27 MoSys, Fujitsu extend 1T-SRAM technology agreement
MoSys Inc. has extended its partnership with Fujitsu Ltd to incorporate MoSys' 1T-SRAM technology into high volume semiconductor devices for portable consumer applications manufactured on Fujitsu's 90nm process generation.
2003-01-21 MoSys' 1T-SRAM-R: silicon-proven on UMC logic process
United Microelectronics Corp. has announced that MoSys Inc.'s 1T-SRAM-R technology incorporating Transparent Error Correction is silicon-proven in its 0.135m logic process.
2012-09-19 MoSys touts second gen Bandwidth Engine IC
Delivering up to 384Gb/s throughput in a single device, the MSR620 incorporates cycle selectable burst functionality to support variable packet sizes with improved interface efficiency.
2002-07-17 MoSys SRAM program adds seven new members
MoSys Inc. has announced that seven companies have recently joined the MoSys 1T-SRAM Design Services Alliance.
2003-11-27 MoSys ports SRAM technology to NEC 90nm process
MoSys Inc. announced the initial silicon verification of its 1T-SRAM-R memory technology on NEC Electronics' 90nm standard logic process.
2003-07-23 MoSys memory silicon-verified by Chartered
MoSys and Chartered Semiconductor have announced that MoSys' 1T-SRAM-R memory technology incorporating TEC has been silicon proven in Chartered's 0.13?m baseline logic process.
2004-01-22 MoSys memory integrated in Lantronix chips
SoC embedded memory solutions provider MoSys has announced that Lantronix Inc. has begun producing chips containing MoSys' 1T-SRAM embedded memory technology.
2004-07-30 Mosys makes 0.13?m memories with Chartered, SMIC
Monolithic System Technology Inc. (Mosys), a developer of embedded memory technology available for license, has ported its so-called 1T-SRAM-Q quad-density memory to the 0.13?m industry-standard logic process at Singaporean foundry Chartered Semiconductor Mfg Ltd, Mosys said Tuesday (July 27, 2004).
2002-11-13 MoSys licenses memory to Hitachi
MoSys Inc. has licensed its 1T-SRAM embedded memory technology to Hitachi Ltd to be integrated into the latter's range of semiconductor products.
2004-07-09 MoSys licenses 1T-SRAM-R embedded memory to Open-Silicon
MoSys Inc. has licensed the 1T-SRAM-R embedded memory technology to Open-Silicon Inc. MoSys' patented technology will enable Open-Silicon to provide its customers with high-quality ASICs containing embedded memory, which will be fabricated in a standard logic process.
2005-01-26 MoSys inks representative pact with Crescendo in China
Monolithic System Technology Inc., (MoSys) a provider of SoC embedded memory solutions, has signed Crescendo Technologies Ltd as an authorized sales representative for MoSys in China.
2004-04-28 MoSys files suit to force Synopsys merger
As expected, Monolithic Systems Technology Inc. (MoSys) is seeking a shotgun wedding, having filed a breach of contract lawsuit Friday (April 23, 2004) against Synopsys Inc. for that company's last-minute termination of its acquisition of MoSys a week before.
2003-02-05 MoSys establishes office in Japan
MoSys Inc. has opened its first office Tokyo, Japan.
2004-07-14 MoSys drops suit to force Synopsys merger
After three days of trial, attorneys from Synopsys and Monolithic System Technology (MoSys) decided they'd had enough - so they agreed Thursday night (July 8, 2004) to settle the lawsuit that MoSys had filed in an attempt to force a merger between the companies.
2013-06-14 MoSys debuts 100G full-duplex quad retimer
The LineSpeed MSH210 PHY is a 100G device boasts retimer functionality, supporting both receive and transmit functions for full duplex 4x25-28 operation.
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