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2014-12-19 | IBM claims PCM non-volatility not necessary Ron Neale gets down to the nitty-gritty of IBM's invited paper at IEDM 2014. IBM has stated that for PCM, non-volatility/data-retention is no longer needed. |
2011-06-15 | NEC, Tohoku University promote CAM-on-MRAM use The use of magnetic RAM non-volatility with content addressable memories will enable the development of electronics that start instantly and consume zero electricity while in standby mode. |
2005-07-28 | Universal memory market to hit $75 billion in 2019, says iSuppli The market for a memory integrated circuit that combines the speed of SRAM, the density of DRAM and the non-volatility of flash, could be $76.3 billion by 2019, according to market research company iSuppli Corp. (El Segundo, Calif.). |
2008-11-18 | Telescopic nanotubes work on RAM-flash fusion Researchers believe they can combine the high-speed of RAM with the non-volatility of flash by using telescopic nanotubes. |
2014-04-15 | SSDs' lustre bound to fade quickly The growing demand for solid state drives can be attributed to their speed and non-volatility. However, a cost-efficient upgrade of the system is limited to the addition of flash memories and scaling back DRAM requirements. |
2014-02-24 | 1Mbit FRAM supports frequent data rewriting The 1Mbit memory from Fujitsu features non-volatility, random access support, and I2C interface. |
2011-01-25 | 'Universal' memory combines DRAM's speed, flash's density A recently developed single "universal" memory technology combines DRAM's speed with flash memory's non-volatility and density, allowing computers to power down memories not being accessed. |
2014-12-18 | Understanding data storage in NVM Using non-volatile random access memory in an embedded design is straightforward, but its functionality does need to be carefully accommodated as described in this article. |
2010-06-11 | STT-RAM geared to displace DRAM, flash Grandis Inc. has updated its STT-RAM roadmap with some ambitious efforts in mind: It hopes to replace DRAM, and eventually, NAND, with its next-generation MRAM. |
2005-12-23 | StarFabric VMEbus board packs dual Motorola processors This dual-processor XtraPower PPCM2 board from Radstone Embedded Computing is available in a range of ruggedization levels with pricing starting at $10,000. |
2011-02-25 | Samsung chief discusses what's limiting PRAM adoption Samsung's CEO admits that systems houses have been reluctant to adopt next-generation memory types in mass quantities because they are not compatible with today's technology. |
2011-08-04 | Samsung acquires STT-RAM vendor Samsung says its acquisition of Grandis will contribute to its development of memory technology and become a key part of the company's global R&D network. |
2005-09-13 | Rise of NAND reshapes NOR market NOR suppliers may need to seek new non-volatile memory technology |
2006-05-16 | Rise of NAND reshapes NOR market NOR suppliers may need to seek new non-volatile memory technology. |
2006-01-16 | Renesas, startup Grandis team on spin torque transfer MRAM Renesas. and startup Grandis said that they will collaborate to develop magnetic RAM of the 65nm generation using Grandis' spin torque transfer writing technology. |
2010-07-08 | Qualcomm plans to rev up struggling lines Qualcomm Inc. launched a number of new initiatives for many of its lesser-known products including Brew OS, Snapdragon and MediaFlo mobile TV. |
2005-03-21 | Philips claims phase-change memory low-voltage progress A team from Philips Research (Eindhoven, The Netherlands) is due to publish details of a chalcogenide non-volatile phase-change memory cell made from doped antimony-telluride which has a low threshold voltage and which should therefore scale with future integrated circuit manufacturing processes. |
2011-07-04 | Phase-change memory tech boasts 10M write cycles IBM Research has demonstrated that PCM allows computers and servers to boot quickly, enhances their overall performance and can endure at least 10 million write cycles. |
2016-03-07 | Phase change memory advances: Threshold switching Here's a look at threshold switching as part of the effort to understand every detail of the conduction mechanisms associated with nano-metric sized phase change memory devices. |
2003-08-06 | NVE tapped by Darpa for MRAM development NVE Corp. has been signed by the Defense Advanced Research Projects Agency to develop magneto-thermal MRAM devices. |
2010-06-11 | Non-volatile SRAM (nvSRAM) basics This application note describes the nvSRAM basic operations. The 4Mbit nvSRAM in 0.13?m SONOS QuantumTrap technology is also discussed here. The same descriptions apply to other Cypress nvSRAM parts. |
2012-05-14 | Next gen wireless apps with FRAM-based MCUs Discover the unique features FRAM offers as a memory alternative for embedded wireless applications. |
2015-09-01 | Mystery in memory: Why 3D XPoint is not PCM By keeping secret the technology behind 3D XPoint memory, Micron and Intel gave the engineering community a challenge by using phrases such as "new recipe," "bulk switching," "fundamental and new." |
2006-08-16 | MRAM ushers in era of new memory tech For the past 11 years, Saied Tehrani and the MRAM development team he directs at Freescale Semiconductor's Arizona facility have worked on a new type of IC memoryone using magnetic resistance instead of charge storage. |
2008-04-02 | MRAM gets spot in Siemens touchscreen HMI Siemens has developed an industrial touchscreen HMI application using MRAM technology supplied by Freescale Semiconductor. |
2004-12-16 | Memory alternatives wait for flash to flame out Memory makers are waiting for flash to die down in the hope to provide new alternatives in the future. |
2010-08-23 | MagSil turns MIT license into marketable MRAM The company is using what it calls magnetic recording cell architecture to develop magnetoresistive RAM, the structure of which appears to be based on a traditional magnetic tunnel junction scheme. |
2001-03-01 | Logic suppliers seek ways to embed FPGAs Driven by the convergence of communications, computing and consumer applications, SoC design complexity increases the time required to bring competitive products to market, putting a premium on design speed and flexibility. |
2007-03-05 | Is MRAM right for your consumer embedded device application? Available memories on the market have inherent limitations that prevent them from offering the best memory features. However, with further refinement, MRAM could someday be hailed as the universal memory. |
2015-07-30 | Intel, Micron unleash novel non-volatile memory The executives said the memory is based on a fundamental discovery that has yielded a non-volatile memory that exhibits a "bulk material property change" at the cross-point of metal access lines. |
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