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| 2004-06-10 | TriQuint rolls out ADS kits for pHEMT processes TriQuint announced the availability of new Advanced Design System design kits for seven of the widely-utilized pHEMT processes available. |
| 2009-05-06 | Sykworks injects LNAs with pHEMT, SiGe tech Skyworks Solutions Inc. has unveiled a new suite of LNAs featuring pseudomorphic high electron mobility transistor (pHEMT) and silicon germanium (SiGe) technologies. |
| 2002-05-03 | M/A-COM GaAs pHEMT switches operate at 2.5V null |
| 2003-05-29 | IceFyre amps adopt TriQuint GaAs pHEMT process IceFyre Semiconductor has selected TriQuint's 0.5?m GaAs pHEMT process technology to fabricate its switch-mode 802.11a and a/b/g power amps. |
| 2006-02-09 | Hittite rolls out new GaAs pHEMT MMIC LNA Hittite Microwave has introduced a new GaAs pHEMT MMIC LNA which is designed for 75? CATV, STB, home gateway and digital TV applications. |
| 2006-12-01 | Advancing GaAs potential via pHEMT/HBT mix Monolithic pHEMT/HBT ICs represent a significant step in advancing the potential for GaAs capabilities by maximizing the advantages of both bipolar and FET circuits. |
| 2002-12-11 | WIN forms alliance with Siemens subsidiary WIN Semiconductors Corp. struck an alliance with Roke Manor Research. |
| 2005-02-21 | TriQuint switches combine low insertion loss, robust harmonic performance TriQuint announced the addition of two new GSM-EDGE switch products to complement its existing CDMA handset switch product line. |
| 2004-05-03 | SPDT - High-power 2.5V GSM Antenna Switch This app not describes the unpackaged PHEMT GaAs that features a single-pole double throw configuration for high-linearity systems. |
| 2004-05-03 | SP6T - High Power 2.5V Antenna Switch This app note describes the unpacked PHEMT GaAs MMIC die that features high linearity and asymmetric design. |
| 2004-05-03 | SP4T - High-Power 2.5V GSM Antenna Switch This app note describes the unpackaged PHEMT GaAs MMIC die that features a single-pole four throw configuration used for GSM systems. |
| 2004-05-03 | SP3T - High Power 2.7V CDMA Antenna Switch This app note describes the unpackaged PHEMT GaAs that features a single-pole three throw configuration for high-linearity systems. |
| 2005-02-14 | SOT-89 FETs offer low cost, high linearity Agilent announced two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5-by-4.1-by-1.5mm SOT-89 surface-mount package. |
| 2010-10-04 | RFMD expands foundry services to include GaAs tech RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers. |
| 2014-05-16 | Pasternack intros broadband, high gain LNAs The devices boast excellent broadband performance, noise figures between 0.8-3dB, gain levels from 25-50dB, gain flatness from ±0.75dB to ±1.25dB and power output levels between 10dBm and 18dBm. |
| 2006-02-16 | MMIC LNA targets industrial sensor apps Hittite introduced a new GaAs pHEMT MMIC low noise amplifier designed for microwave radio, military and industrial sensor applications. |
| 2003-06-11 | Mitsubishi develops 76GHz MMICs for automobile radars Mitsubishi Electric Corp. has developed eight high performance MMIC chipset solution models by electronic beam scanning for 76GHz mm-wave radars. |
| 2004-12-09 | Microwave radio, test, and sensor apps get a low-noise boost Hittite introduced a new family of low noise amplifiers for microwave radio, test and sensor applications from 7GHz to 32GHz. |
| 2002-06-20 | Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE This application note describes the mass production techniques for large diameter MOVPE wafers for microwave devices. |
| 2006-02-02 | LNAs support satcom, radio systems Mimix expanded its product line of gallium arsenide monolithic microwave IC low noise amplifiers with three new amps. |
| 2006-02-14 | LNAs offer 0.06dB noise figure Hittite Microwave released two new GaAs pHEMT MMIC low noise amplifiers which are designed for cellular/3G basestation and repeater applications. |
| 2006-06-19 | LNAs for cellular, WiMAX start sampling RFMD has started sampling five new GaAS pHEMT low noise amplifiers for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards. |
| 2008-07-03 | LNA fits cable STB, DTV tuner systems RF Micro Devices Inc. has released the CXE-1089Z GaAs pHEMT LNA for use in cable STB and DTV applications. |
| 2005-07-15 | Ka-band PAs and doubler target wireless communications apps Mimix Broadband introduced a new line of Ka-band GaAs monolithic microwave integrated circuit products, including power amplifiers and a doubler, covering the 27GHz to 34GHz frequency bands |
| 2005-07-18 | Integrating CMOS designs in GSM front-ends Here's a comprehensive discussion of key technical problems in the design of a TD-SCDMA mobile-phone RF front-end |
| 2005-01-07 | Hittite GaAs LNA spans 17GHz to 26GHz Hittite announced the HMC517, a high dynamic range GaAs PHEMT MMIC low noise amplifier which covers the 17GHz to 26GHz frequency range. |
| 2015-07-20 | Hermetic GaAs IC SPST switch features 1.1dB loss at 6GHz Skyworks said the wideband DC-6GHz ISO13316 performs with 45dB isolation at 2GHz, geared for high-reliability space, satellite and defence applications. |
| 2005-08-16 | GPS low-noise amplifier design made easy with MMIC Learn the possible ways of putting MMIC-based GPS low-noise amplifier designs under software control |
| 2005-11-03 | Driver amp spans 11 to 20GHz Mimix Broadband introduced a GaAs three stage driver amplifier with a self-biased, single supply design. |
| 2005-10-25 | Chipset targets millimeter wave apps Mimix Broadband announced the introduction of a gallium arsenide MMIC 13GHz/15GHz chipset that consists of a highly integrated image reject receiver and transmitter, and compact, two stage power amplifier. |
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