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2009-02-18 Inductors handle high transient current spikes
Vishay Intertechnology Inc. has developed a new IHLP low-profile, high-current inductor in the 6767 case size.
2006-08-01 Inductors delivers low DCR, no thermal aging
The new series of flat-coil, power inductors from Pulse, a Technitrol Company, features low DCR and high saturation current in a low-profile, surface-mount package.
2005-09-23 Inductors can handle up to 30A
The new series of high-power inductors from Epcos covers the inductance range from 0.5?H to 3.92?H and can handle currents up to 30A.
2005-05-05 Inductor with lowest DCR for its size
Vishay once again extended its IHLP family of low-profile, high-current inductors with a new device that offers the lowest DCR/?H available in a compact 10.2-by-11.5mm package with a low 4mm height profile.
2013-01-10 Identifying prospects in green power
There are many opportunities in energy harvesting for use in green power alternative energies.
2006-01-18 I2C power supply controller for DC/DC converters
Linear Technology introduced a dual I2C power supply monitor and margining controller designed for digital management of power supplies in high-availability systems.
2009-05-21 Highly-integrated power module simplifies design
Intersil Corp. has released the ISL8201M, a highly integrated power conversion module that saves space, reduces cost and simplifies design.
2009-02-03 High-current winged inductor saves power, space
Vishay Intertechnology Inc. has developed what it claims to be the first winged low-profile, high-current inductor.
2005-10-05 High-current inductors deliver 0.50 milliohm DCR at 0.19?H
Vishay Intertechnology extended the IHLP family of low-profile, high-current inductors with a new device that offers one of the lowest DCR/?H available in a 10.2-by-10.2mm package with a 4mm height profile.
2008-07-08 High-current inductor touts compact housing
Vishay Intertechnology Inc. announced an IHLP low-profile, high-current inductor in the 2020 case size.
2011-04-04 High-current inductor touted first in 3232 size
Vishay Intertechnology claims that their IHLP low-profile high current inductor is the industry's first such device in the 3232 case size.
2008-12-25 High-current inductor housed in ultralow package
Vishay Intertechnology Inc. has released the high-current IHLP-2020BZ-11 inductor that offers an ultralow 2mm profile, with a wide inductance range and low DCR.
2010-04-05 High-current inductor boasts up to 2MHz frequency
Vishay Intertechnology Inc. is offering a new IHLP low-profile, high-current inductor with a frequency range up to 2MHz in the 6767 case size.
2011-08-11 High-current inductor boasts 0.22C10?H inductance
Vishay's IHLP-3232CZ-01 is a compact, high-current inductor in the 3232 case size that offers maximum DCR down to 1.61m?.
2006-04-12 HEXFET MOSFETs deliver optimized conduction, switching
International Rectifier introduced four SO-8 30V dual HEXFET MOSFETs for synchronous buck converter applications up to 6A.
2005-03-18 Half-brick delivers tight, high-efficiency bus power
Power-One's HKS48T30120 half-brick delivers a tightly-regulated as well as high-efficiency output for powering the intermediate bus as well as computer, networking and wireless communications equipment.
2006-05-01 Getting the right turn-on sequencing for hot-swap
A hybrid solution such as the NIS5102 device simplifies the circuit design and implementation of hot-swapping and turn-on sequencing in AMC applications.
2015-12-14 Get 500W in converter with GaN (Part 2)
In Part 2, we tackle the key details of physical and electrical design, including layout, key waveforms and losses. We also summarise key potential improvements.
2015-12-07 Get 500W in converter with GaN (Part 1)
Part 1 covers brick technology, a comparison of eGaN FETs to silicon MOSFETS, a basic overview of the GaN-based eighth-brick design, and experimental results.
2004-11-24 Front-end extends power density, I?C flexibility
Power-One bills its FNP850-12 as the first in a series of hot-swap front-ends featuring industry-leading power densities and I?C monitoring and control capabilities.
2007-03-01 Fine tune POL regulation in DTVs
Here is a tutorial focusing on the different power needs of the new batch of DTVs being developed.
2005-04-21 Filter cleans low-voltage supplies
Picor's QPO-2 System-in-a-Package is an active power filter that reduces a supply's output ripple and noise by more than 30dB from 1kHz to 500kHz.
2005-09-23 Ferrite bead chip inductors tackle high-current, high-speed signals
Stackpole Electronics has introduced a broad line of multi-layer ferrite bead chip inductors for high-current and high-speed signal applications
2004-06-14 Fairchild MOSFETs offer benefits of improved fast-switching technology
Fairchild's PowerTrench MOSFET process technology yields low values for Miller Charge, RDS(on) and total gate charge.
2005-06-17 Fairchild linear amplifier used in Broadcom's WI-FI design
Fairchild Semiconductor's RMPA5255 WLAN RF power amplifier has been selected for use in Broadcom's latest single-chip and PCI Express-enabled Wi-Fi reference designs.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2002-11-29 Ericsson power modules tout high reliability
The company's PMA family of surface-mountable dc/dc regulators exhibits an MTBF rating >12 million hours and an efficiency up to 95 percent.
2004-11-11 Ericsson joins DOSA alliance
Dc/dc power module supplier Ericsson Power Modules (Dallas) has joined the Distributed Open Standards Alliance (DOSA), joining current members Tyco Electronics Power Systems, SynQor Inc., Celestica Power Systems, Lambda, and Delta Electronics.
2013-03-19 EPC rolls out dev board for 100V eGaN FET apps
The EPC9010 development board a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode field effect transistor.
2013-04-12 EPC arms development board with TI's eGaN FETs
The EPC9005 development board is a half bridge configuration containing two 40 V EPC2014 eGaN FETs with a 7 A maximum output current using a gate driver optimised for GaN devices.
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