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total search24 articles
2013-10-21 3D memory improved via laser thermal anneal application
Laser thermal anneal application can enhance the current in vertical polysilicon channel devices for 3D memory, as demonstrated by Imec and Excico
2008-12-16 DRAM adopts better features
Samsung Electronics Co. Ltd's 56nm DRAM is something to watch out for. Changes to the basic transistor design for both the cell access transistor in the memory array and the peripheral support transistors used to design the control logic are in the works.
2002-12-13 AMD discovers a Flash nanowire structure
A novel nanoelectronic structure has startled researchers at Analog Micro Devices Inc. with a sudden show of promise for future Flash memory devices.
2014-07-08 Deposition, etch equipment revs up 3D NAND ramp-up
The equipment from Lam Research addresses the need for three of the most critical steps in forming 3D NAND memory cells: stack deposition, vertical channel etching, and tungsten wordline deposition
2008-12-29 Shanghai clears way for AMD's 45nm shift
AMD moves to the 45nm technology node with the launch of its new Opteron server chip, code-named Shanghai.
2004-04-23 VLSI papers weigh 65nm, new circuits
While technologists look to 65-nanometer nodes, circuit designers by and large are two generations back.
2005-09-27 Strained silicon to take IEDM spotlight
With high-k dielectrics apparently delayed beyond the 45nm node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques as the main pathway to faster transistors.
2008-08-25 Spice model shapes up organic TFT panels
Cambridge Display Technology has collaborated with Silvaco Data Systems to develop Spice model for organic TFT technology.
2011-09-26 Specialized foundry processing yields high-performance analog IC
Learn about the impact of foundry process on achievable specifications.
2008-11-13 Solar markets: Highlighting PV technology
It has been shown that solar energy harvesting will soon go mainstream, but it's not clear which of the many diverse technologies vying for dominance in this emerging market will take precedence.
2014-04-10 Six hot tech trends emerge in high-speed memory
While DDR4 comes first to mind in consideration of the latest developments in high-speed memory, several others including embedded DRAM and SRAM cells make the top six list.
2005-06-27 Semiconductor technologies for power management (Part 3)
Understand better why ICs and discrete transistors require very different methods of fabrication.
2009-03-19 Power management for optimal design
This article describes a holistic approach for managing and optimizing the power in a design. Effective power management involves proper understanding the application of a chip, technology selection, design techniques and methodology.
2005-08-01 Little time, big decisions for 45nm node
Technologists face some tough decisions as they ponder which knobs to turn for the 45nm node.
2007-08-01 High-k, metal gates clear way for new chips
From an industrywide perspective, high-k and metal-gate technologies allow a restart of chip scaling with reduced leakage, higher initial product costs, performance hits and tool changes in the process flow.
2004-06-01 For metrology, nano changes everything
International Technology Roadmap for Semiconductors said that the transistor gate length of microprocessors at the 45nm node will be <20nm in 2010.
2005-10-06 Fluorine sweeps high-k defects out of the gate
Hafnium oxide, the anointed successor to silicon dioxide in the gate stack, has a new ally: fluorine.
2002-12-17 Flash gets a quantum makeover at IEDM
Research at the University of Tokyo and at Advanced Micro Devices Inc. dangles the possibility of using quantum-well technology to breathe new life into Flash memory.
2005-08-22 Constructing the next transistor
The planar metal-oxide-semiconductor field-effect transistor appears to be approaching the end of its useful life
2006-08-16 CMOS scaling: painstaking but possible
CMOS scaling is, in fact, proving to be a painstaking and humbling taskalbeit a possible one.
2011-10-13 Benefits of SONOS memory for embedded flash
Here's a discussion on why silicon-oxide-nitride-oxide-silicon memory technology is ideally suited for eFlash.
2014-01-24 Apple taps Samsung 28nm HKMG process for A7
Chipworks' Sinjin Dixon-Warren dissects the front end of line transistor structure used in the A7, with comparison to advanced technologies used by both Apple and other vendors.
2006-03-16 A designer's guide to CMOS RF models
A BSIM4 model that is well correlated at RF can be highly accurate from DC to microwave frequencies over all operating conditions.
2015-05-14 A closer look at Samsung's 14nm node
Samsung has lagged Intel in the release of its process nodes, especially with the 20nm node that was two years behind Intel. Remarkably, Samsung has shrunk the lag for its 14nm to about six months.
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