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2008-03-31 USB 2.0 OTG controller saves space, power
TI has introduced a high-speed USB 2.0 OTG dual-role controller that extends battery life in consumer devices and comes in a 5mm x 5mm package for space-constrained consumer apps.
2013-12-02 Transphorm, Fujitsu to merge GaN power device biz
Fujitsu will establish a new company in Japan for the GaN power device business, where it will transfer its combined design and development assets as well as IP rights in GaN power devices.
2007-04-17 Total power solutions target LCD TV SMPS apps
Fairchild announced it is offering the new Stealth II and Hyperfast II diode technology as part of a total power device solution specifically designed to optimize LCD TV SMPS applications.
2003-04-30 TI ships IC for "Power Over Ethernet" apps
Texas Instruments Inc. has released two new power management ICs that allow dc power and data to be deliver and sourced over a standard Ethernet cable
2003-11-13 TAEC enhances IGBT line with device technology
Toshiba America Electronic Components Inc. (TAEC) has announced a 1,200V series of IGBTs that provide improved performance in motor drive apps.
2008-02-29 Surface-mount power inductor fits in tight spaces
Its compact footprint makes BI Tech's HM69T inductor series suited for space-saving designs, including those applications with limited PCB space.
2011-03-29 Study pushes parallelism as computing hits 'power wall
With today's computing engines hitting a "power wall," experts are calling for new parallel programming environments, specifically software environments to develop new apps for multicore architectures
2013-05-09 SiC power devices success rests on EV/HEV adoption
Yole Dveloppement points out that wide-bandgap transistor and diode growth potential is obscured by automotive qualification though PV inverter growth remains positive.
2009-07-24 RF power devices see hope in China, LTE push
A new report forecasts that deployment of wireless infrastructure in China and the LTE push in the west will lift RF power device market.
2012-12-12 RF power amp, device sales combine for $3B despite slow year
The Asia-Pacific Region, including Japan, continues to account for over 75 per cent of the RF power semiconductor devices that are sold into the mobile wireless infrastructure segment
2012-10-15 Renesas boasts MCU-based power supply sol'n
The chipset comprises the R2A30521NP, a voltage regulator controller that integrates an MCU-based digital interface, and the R2J20759NP, an intelligent PWM-driver-MOSFET.
2013-09-09 PVD system enables power devices' 300mm transition
The Sigma fxP carries thin wafer handling hardware and uses film deposition stress control techniques to deliver high throughput processes with low wafer bow.
2013-10-28 Pulsed RF power devices to surpass $250M by 2018
ABI Research forecasted that the markets for pulsed RF power devices up to 18GHz will grow in the next five years despite the current economic turmoil and cuts in defence spending
2015-09-29 Powering FPGAs with digital power modules
Here is a look at FPGA reference design generator, and the steps for selecting an FPGA, required power rails, backplane and digital power modules for POL
2002-07-19 Powerex IGBT targets applications for high-power inverters
Powerex Inc.'s Mega Power Dual is an optimized IGBT power device that offers a new carrier-stored trench gate bipolar transistor chip and uses LPT process along with a plug-cell merged design.
2004-03-29 Power Integrations expands dc-dc chip line for PoE apps
The IEEE approved the 802.3af standard for power over standard Ethernet cables in June last year
2011-11-22 Power IC market sees 72% CAGR until 2015
IGBTs and MOSFETs are forecast to drive the market to grow from $14.2 billion this year to $16.7 billion in 2013.
2005-09-07 Power device market to shrink in 2005, says analyst
The global market for power semiconductor devices has been forecast to decline in 2005 from the figure of $11.2 billion in 2004, which was up by more than 20 percent on 2003, according to IMS Research
2011-02-25 Power device lowers remote control operating voltage
Vishay Intertechnology's V series of low-voltage supply options operate with a stable sensitivity rating at a 2V supply voltage over a temperature range of +5C to + 85C.
2011-07-01 PoE PSE controllers deliver 90W of power
Linear Technology's 4-port and single-port PoE controllers enable a new generation of high-power PoE applications that include WAP, thin clients and heated surveillance cameras
2008-11-25 Optimism brews in high-power RFIC market
The latest market developments have put a positive spin on ABI Research's forecast for the penetration of high-powered RFICs into mobile wireless base station sector.
2007-05-29 On-wafer solution brings power devices to market faster
Cascade Microtech's Tesla system touts a complete on-wafer solution for overtemperature, low contact resistance measurements of power semiconductors of up to 60A (current in pulsed mode) and 3,000V (coaxial measurement
2012-05-15 New GaN process improves high voltage power device efficiency
RFMD's rGaN-HV process technology tips up to 900V device breakdown, high peak current capability and ultra-fast switching times for GaN power switches and diodes.
2003-05-16 Motorola's power IC process runs on 300mm wafers
Motorola launched the newest version of its power semiconductor process technology combining voltage capability with analog functions
2010-12-02 Mitsubishi acquires low power device maker
Mitsubishi Electric Corp. has agreed to purchase the Vincotech shares of The Gores Group, thus acquiring the device manufacturer
2007-02-26 Minimize FPGA power consumption
After prioritizing the initial requirements, the designer should consider several factors before selecting an FPGA to implement the design.
2002-01-15 Manhattan Scientifics wins new patent for power devices
Manhattan Scientifics Inc. has received a new patent covering the manufacture and use of its MicroFuel Cell power devices
2007-11-28 Make IP telephony as reliable as a POTS device with PoE
The IEEE 802.3af standard, also known as PoE, addresses all the issues in supplying power to IP telephony devices via Ethernet cabling
2010-11-04 LAST POWER Project aims to develop advanced SiC and GaN semicon
The partners in a new publicly-funded European research project have just announced details of the multinational/multidisciplinary program called LAST POWER (Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications).
2008-06-05 IMEC, Aixtron tout advance to low-cost GaN power apps
IMEC and Aixtron AG researchers have grown uniform AlGaN/GaN heterostructures on 200mm silicon wafers. The achievement is claimed to be a major advance towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits
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