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What is SRAM?
Static random access memory, pronounced "ess-ram," is a type of memory that is faster and more reliable than the more common dynamic RAM (DRAM). The term "static" is derived from the fact that this type of memory doesn't need to be refreshed like DRAM.
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2008-02-19 Using Micron asynchronous PSRAM with ADI ADSP-BF53x Blackfin processors
This technical note describes the design requirements for a seamless memory connection between Blackfin processors and Micron 70ns, 8Mbit asynchronous PSRAM devices.
2004-09-09 Toshiba, NEC, Fujitsu agree on common specs for PSRAM
Toshiba Corp., NEC Electronics Corp., and Fujitsu Ltd have agreed on standard interface specifications for Pseudo Static Random Access Memory (PSRAM) with burst mode.
2005-11-17 PSRAM reduces handset costs
Micron's new pseudo-SRAM further enables a manufacturer's ability to reduce costs within basic-feature handset designs due to additional features incorporated into a CellularRAM device.
2004-11-23 PSRAM modules provide small footprint memories
A family of high-performance stacked flash and PSRAM module products suitable for applications requiring low power and small footprint memories was launched by Atmel.
2009-03-05 PSRAM 101: An introduction to Micron CellularRAM and PSRAM
This technical note introduces Micron CellularRAM and PSRAM devices; demonstrates their advantages over other memory options for use in mobile handsets; and presents available configurations.
2006-12-05 Mosaid acquires PSRAM patent portfolio
Mosaid Technologies Inc. has acquired a portfolio of pseudo-SRAM (PSRAM) technology, consisting of three U. S. patents, three Taiwan patents and three Korea patents.
2008-02-25 ISSI readies first PSRAM line
Integrated Silicon Solution Inc. (ISSI) offers samples of the 4Mbit IS66WV25616BLL and the 8Mbit IS66WV51216BLL Pseudo SRAMs (PSRAMS), the first members of its PSRAM product line.
2002-10-17 ISSI MCP combines Flash, PSRAM
Integrated Silicon Solution Inc. has released two MCPs that combine a 64Mb NOR-type Flash memory with a 16Mb or 32Mb PSRAM.
2002-03-20 Fujitsu, NEC, Toshiba agree on common specifications for PSRAM
Fujitsu Ltd, NEC Corp. and Toshiba Corp. have reached an agreement on common specifications for the next generation of PSRAM devices.
2003-03-05 Etron PSRAM draws 45?A during standby
Etron Technology Inc. has introduced a 16Mb Pseudo SRAM that draws a standby current of 45?A and exhibits a cycle time of 50ns.
2007-05-17 Cypress exits PSRAM, sells biz to Taiwan's ESMT
Exiting the PSRAM market, Cypress Semiconductor is selling off the business to Taiwan's Elite Semiconductor Memory Technology Inc. for an undisclosed amount
2007-09-06 Winbond launches new mobile memory lines
Taiwan's Winbond Electronics is launching two new families of memory components for mobile applicationsthe low-power DRAM and PSRAM.
2003-01-16 Toshiba ships 128Mb Pseudo SRAMs
Toshiba Corp. has announced the availability of a pair of 128Mb Pseudo SRAMs that have a standby current of 250?A.
2007-02-20 ST rolls out 'smallest' 65nm NOR flash memory
STMicroelectronics is sampling 1Gbit and 512Mbit 65nm NOR flash with what is claims is the smallest die size available on the market.
2005-08-17 SRAM market flat in Q2 and full year, says Semico
The SRAM market in the second quarter rose approximately 6 percent in unit shipments and one percent in revenues from the first quarter, according to Semico Research Corp.
2008-04-30 Row boundary crossing functionality in CellularRAM memory
This technical note describes the conditions that exist at the row boundary for the WAIT pin and burst READ/WRITE operations, focusing on row boundary crossing as supported on CR 1.0-compliant devices.
2014-11-05 Rethinking memory design for IoT and wearables
The space, power and application requirements of wearables and other mobile connected devices that collectively make up the growing IoT ecosystem require a fresh approach to system design.
2010-10-14 Pseudo SRAMs join SRAM ease, DRAM density, cost
The memory products cut the need for an external refresh controller, and offer partial array refresh, low standby current and deep power down modes that cut power use.
2005-12-07 NOR flash supports 133MHz speed
STMicroelectronics disclosed that they have started to manufacture 1.8V, 256Mb and 512Mb NOR flash memory devices using 90nm multi-level cell process technology.
2002-07-10 NanoAmp rolls 16Mb PSRAMs
NanoAmp Solutions Inc. has released its family of asynchronous single-transistor PSRAMs targeted at 2.5G and 3G mobile phones.
2004-07-30 Micron begins sampling 128Mb PSRAMs
Micron announced sample availability of a 128Mb burst CellularRAM device incorporating a v1.5 feature set.
2006-02-20 Japanese trio announces COSMORAM Rev. 4
Toshiba, NEC and Fujitsu announced that they have reached an agreement on standard interface specifications known as COSMORAM Rev. 4 for PSRAM for use in mobile devices.
2003-06-20 ISSI pseudo SRAMs show wider voltage range
Integrated Silicon Solution Inc. has introduced an ultra-low power PSRAM line with the release of the IS32WV16100 and IS32WV16200 devices.
2004-11-22 Intel StrataFlash wireless memory (L18 SCSP) to ARM PrimecellTM SMC (PL092) design guide
This app note describes interfacing Intel StrataFlash wireless memory (L18 SCSP), featuring 256Mbit L18 flash memory with 64Mbit Synchronous PSRAM, to an ARM Primecell static memory controller (SMC-PL092).
2002-06-26 Infineon, Micron codevelop CellularRAM specifications
Infineon Technologies AG and Micron Technology Inc. have agreed to collaborate on the development of specifications for CellularRAM memory.
2003-05-07 Infineon, Cypress, Micron rolls out 32Mb CellularRAM products
Infineon Technologies AG, together with Cypress Semiconductor Corp. and Micron Technology Inc., is sampling 32Mb CellularRAM devices.
2005-08-31 Hynix, NanoAmp, Winbond to co-develop CellularRAM specs
The CellularRAM work group announced the addition of Hynix Semiconductor Inc., NanoAmp Solutions Inc. and Winbond Electronics Corp. to its membership.
2006-12-06 Fujitsu intros 256Mbit FCRAM for mobile apps
Fujitsu Microelectronics America has announced a new 256Mbit FCRAM designed for mobile applications such as cellular handsets.
2006-08-16 Finding the right mem for your handset design
This article provides memory recommendations for basic, feature-rich and smart cellphone designs. It discusses memory options including SRAM, PSRAM and Mobile SDRAM, and examines how density, system architecture, caching and burst operation specifications affect your design decision.
2002-02-27 Cypress taps ProMOS for 1T SRAM technology
Cypress Semiconductor Corp. and ProMOS Technology Inc. will codevelop pseudostatic RAMs based on a single-transistor cell for use in cell phones and other mobile applications.
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