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random access memory What is Magnetoresistive Random Access Memory (MRAM)? Search results

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What is Magnetoresistive Random Access Memory (MRAM)?
Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology that has been under development since the 1990s. Continued increases in density of existing memory technologiesnotably flash RAM and DRAMhave k
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2002-05-02 Virage offers multiport memory for SoC designs
Memory designer Virage Logic Corp. intends to market a configurable SRAM-based multiport memory that can perform three R/W operations simultaneously, increasing data throughput in today's embedded systems and meeting the expected demands of parallel or pipelined processors in future SoC designs
2002-07-31 Virage Logic memory platform consumes lesser power
Virage Logic Corp. has introduced its ULP embedded memory platform that utilizes an architecture enabling it to consume four to 26 times less active power than competing products
2002-10-03 Toshiba FCRAMs achieve 20ns random access time
Toshiba Corp.'s series of 288Mb network FCRAMs feature a maximum random access time of 20ns
2002-01-31 Toshiba FCRAM features 25ns access time
The TC59LM806CFT and TC59LM814CFT FCRAM have a random access time of 25ns and a data transfer rate of 400Mbps at 200MHz
2014-08-01 Testing resistive memory devices
In this instalment, we will address issues related to characterisation and forming, as well as endurance testing for 1R ReRAM structures.
2013-12-06 Strong memory market boosts semiconductor sales in 2013
IHS stated that following a 2.5 percent decline in 2012, the global semiconductor market has regained its footing in 2013 with revenue set to expand by nearly five percent.
2006-02-10 SRAM delivers 8ns access times
ISSI introduced a 2M x 8, 16Mb, high speed Asynchronous SRAM with access times as fast as 8ns, giving designers a high speed device that utilizes low power technology to minimize power consumption
2002-01-02 Sharp stacked CSP memory boasts 200Mb capacity
The company has developed a four-chip stacked CSP memory device that integrates two 64Mb NOR Flash memory chips, a 64Mb RAM and an 8Mb low-power SRAM into a single package
2002-11-11 Sharp composite memory targets next-gen cellphone apps
The company has developed a composite memory device with a capacity of 320Mb that is housed in a three-chip stacked CSP
2014-04-01 Selecting housing materials for DDR4 memory module
The design and type of connector determines the set of materials that can be considered for the housing.
2005-08-15 Samsung speeds up DDR2, DDR1 memory production
Samsung Electronics Co. Ltd is quickly shifting from DDR1 (Double Data Rate 1) to DDR2 main memory
2002-05-03 Rambus memory module delivers 4.2GBps bandwidth
The RIMM 4200 memory module from Rambus Inc. integrates two RDRAM memory channels to deliver 4.2GBps of memory bandwidth from a single module
2014-07-15 Porous silicon oxide improves memory prod'n
Researchers from Rice University developed what they say is a breakthrough silicon oxide technology aimed at high-density, next-generation computer memory that is one step closer to mass production
2012-02-08 Nonvolatile memory claims lowest energy consumption
The FM25P16 uses 1/1,000th the energy of EEPROM devices, while delivering fast read/write performance and virtually unlimited endurance.
2002-01-30 NEC claims 65ns address access time for RAM device
The 5PD4664312 is said to offer 65ns address access and 18ns page access time, making it what is claimed to be the fastest 64Mb RAM in the world
2013-01-08 Nanoscale engineering to spawn 'universal memory
Nanometer-scale engineering of so-called phase-change materials could lead to non-volatile memories with fast read and write speed, high reliability and low power consumption.
2002-06-21 Micron samples 143MHz SyncFlash memory
Micron Technology Inc. has announced that it is sampling its second-generation 64Mb SyncFlash device that features a 143MHz SDRAM interface and 2Mx32 and 4Mx16 configuration.
2012-11-21 Memory to make a splash at ISSCC 2013
Non-traditional memory architectures could steal the show from more structured analytical papers to be presented at the International Solid State Circuits Conference
2013-02-11 Memory test tip: Alternative NVM options (Part 1
Learn about the search for alternative NVM technologies caused by the growing concern that floating-gate flash memory would soon no longer be able to satisfy the requirements
2014-04-24 Memory spurs global chip revenue growth
Memory chips recorded a robust performance, with DRAM and NAND flash revenues jumping by 32.5 and 24.2 per cent respectively. Prominent memory supplier performers include Micron who rose six places towards the fourth place, and SK Hynix who ascended from seventh to fifth
2011-06-01 Memory chip makers cash in on higher PC demand
The Bedford Report has observed a surge in memory chip sales with the rapid increase in mobile demand. This trend will continue, especially with rising optimism that theDRAM market is turning around
2013-09-09 Lack of memory capabilities threaten Apple's future
As major innovation requires a great deal of memory capabilities, Apple is faced with an uncertain future with Samsung taking the lead as the memory market leader, stated IHS
2002-02-27 Irvine Sensors rolls out memory chips with TSOP footprint
The company's Microelectronics Products Division has announced the shipment of its "Skinny Stacks" stacked memory products that match the footprint of next-generation TSOP ICs
2013-05-22 Imec, Globalfoundries team up for high-density memory
The organisations aim to advance spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology that is presented as an alternative to SRAM and DRAM.
2013-04-04 Hybrid Memory Cube Consortium to focus on faster DRAM
Micron, Samsung, Hynix are among over 100 companies releasing a specification for a 3D DRAM and logic module known as the Hybrid Memory Cube
2015-07-29 How PC slump affects memory chipmakers
Semiconductor sales are in a two-year slump due to weak demand for PCs and smartphones, according to Gartner. The research firm said chip growth will return to 4-5 per cent from 2017-2019.
2002-10-07 Holtek SRAM has 70ns access time
Holtek's HT62L256 SRAM chip features an access time of 70ns while operating from a 2.7V to 3.3V supply
2014-07-24 Fundamentals of resistive memory devices
In this article, we address the basics of resistive random access memory(ReRAM) structures, as well as the test hardware available to characterise them.
2002-11-13 Fujitsu stacked memory MCP targets new cellphone apps
The MB84VY6A4A1 MCP from Fujitsu Ltd stacks three Flash, one SRAM, and two FCRAM devices in a single 15-by-11-by-1.4mm case.
2012-07-31 FRAM: Alternative to flash memory in embedded designs
Here are some real world examples of where ferroelectric random access memory should be considered as an alternative to flash as a viable nonvolatile memory technology.
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