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2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2014-08-01 Testing resistive memory devices
In this instalment, we will address issues related to characterisation and forming, as well as endurance testing for 1R ReRAM structures.
2012-10-04 Rice University makes advancements in transparent memory
Rice University's research team has made highly transparent, nonvolatile resistive memory devices based on the revelation that silicon oxide can be used as a switch.
2011-02-08 Rambus acquires non-volatile memory developer
The acquisition would make for a good fit with Rambus because Rambus is a technology licensor itself and it is not expected that the company will compete in the memory chip business directly
2014-07-15 Porous silicon oxide improves memory prod'n
Researchers from Rice University developed what they say is a breakthrough silicon oxide technology aimed at high-density, next-generation computer memory that is one step closer to mass production
2013-02-11 Memory test tip: Alternative NVM options (Part 1
Learn about the search for alternative NVM technologies caused by the growing concern that floating-gate flash memory would soon no longer be able to satisfy the requirements
2014-07-24 Fundamentals of resistive memory devices
In this article, we address the basics of resistive random access memory(ReRAM) structures, as well as the test hardware available to characterise them.
2008-12-23 Coming soon: Universal memory
A slew of promising "universal memory" technologies were unveiled at the International Electron Devices Meeting (IEDM), but don't look for mass adoption anytime soon
2012-04-09 Advantages of resistive RAM for next-gen NVM
Here's a discussion on the strengths of hafnium-oxide-based resistive RAM cells, and the main challenges ahead for this technology
2013-07-08 Addressing memory scaling concerns
Here are some promising research and design directions to overcome challenges posed by memory scaling
2013-06-25 Utilising non-volatile memory IP in SoC designs
Integrating anti-fuse NVM on chip for program storage results to increased margin as well as independence from vagaries of supply chain and component availability.
2005-07-28 Universal memory market to hit $75 billion in 2019, says iSuppli
The market for a memory integrated circuit that combines the speed of SRAM, the density of DRAM and the non-volatility of flash, could be $76.3 billion by 2019, according to market research company iSuppli Corp. (El Segundo, Calif
2013-08-07 Start-up uncloaks its RRAM non-volatile memory technology
Crossbar Inc. recently uncloaked its Crossbar Resistive RAM, a new memory technology capable of storing up to one terabyte of data on a single 200mm2 chip.
2014-11-19 Sheet of electronics: Printing memory on paper
What once used as a medium for disseminating information is now being explored as a material for printed electronics. Researchers say paper has a lot of potential as a low-cost surface for printing electronic circuits.
2014-02-14 Rise in IoT breeds new type of embedded memory
Resistive RAM (RRAM) technology claims to provide the cost competitiveness needed for consumer electronics, home appliances, wireless sensors networks and even disposable electronics
2012-04-11 Resistive RAM based on silicon dioxide
Researchers have developed a resistive-switching memory device based on silicon dioxide that shows a simpler material structure compared to those using metal-oxide films.
2011-08-08 Researchers develop biocompatible memory device
Researchers have developed a memory device with the physical properties of Jell-O and works properly in wet environments
2013-12-11 Recognizing the issues with phase change memory
There are about half a dozen papers on phase change memory (PCM) devices at IEDM 2013, and most deal with known reliability problems associated with PCM
2011-05-13 Rambus taps startups to explore next-gen memory tech
Keen on developing potential flash and DRAM successors, Rambus is investing in memory technology startups and lending support to universities researching next-generation memory technologies
2003-06-26 PRAM poised to re-enter memory race
Phase-change RAM, also known as ovonic or chalcogenide memory, appears to have gotten a new lease on life
2014-06-30 NV memory: Significance of filament size and shape
Many presenters in VLSI 2014 are seeking to improve performance and increase the understanding of ReRAM/RRAM operation. However, there is still no clear winner when it comes to material or memory type
2012-11-21 Memory to make a splash at ISSCC 2013
Non-traditional memory architectures could steal the show from more structured analytical papers to be presented at the International Solid State Circuits Conference
2013-03-01 Memory test tip: Characterising PCM
Learn about new techniques involving current limiting and high-speed pulse generators.
2015-04-22 Is resistive RAM the next NVM star
Resistive RAM features low power consumption and a small cell areaboth compelling reasons for their adoption as a non-volatile memory.
2015-07-30 Intel, Micron unleash novel non-volatile memory
The executives said the memory is based on a fundamental discovery that has yielded a non-volatile memory that exhibits a "bulk material property change" at the cross-point of metal access lines
2012-06-14 IBM, SK Hynix team up in memory tech
SK Hynix is now covering three bets on future memory technology with agreements in place with Toshiba on magnetic RAM, with Hewlett-Packard Co. on resistive RAM (ReRAM), and with IBM on PCRAM.
2016-03-31 HPE's hybrid DRAM/flash a first in new memory family
The release of the 8 Gbyte NVDIMM-N boards with new Broadwell-based Proliant DL360 1U and 380 2U servers signify HPE's move toward a new kind of persistent memory in servers
2009-06-03 Green memory: key to driving down data center power
In servers, the notoriously voracious microprocessor is passing the power-hog mantle to the DRAM. Thus the greening of the data center includes a focus on lower-voltage DRAMs, non-volatile alternatives and the emerging category of storage-class memories.
2015-08-17 Flash Memory Summit paints SSD, flash future
During the event, Mike Jadon, CEO of Radian Memory Systems, revealed his company's Symphonic software that aims to replace the FTL code originally written in 1988 by Robert Norman of SanDisk
2014-05-14 Assessing correlated electron memory claims by 4DS
4DS Inc. now claims that the operation of its memory is based on strongly correlated electron-effect Mott-like transition
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