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total search24 articles
2001-10-08 Bias scheme for RF Nitro NBB-series amplifiers
This application note illustrates a bias circuit topology for RF Nitro's NBB series of monolithic amplifier ICs.
2001-10-09 Wafer characterization
This application note shows an example of how RF Nitro performs wafer characterization.
2001-10-08 NDA series assembly notes
This application note outlines the recommended assembly procedures for RF Nitro's NDA series of distributed amplifiers.
2001-10-08 NBB series assembly notes
This application note outlines the recommended assembly procedures for RF Nitro's NBB series of MMIC amplifiers.
2001-10-08 NBB series and NDA series reliability
This application note discusses reliability issues of NBB and NDA series of amplifiers. Information on component reliability with varying device junction temperature and the effect of the package used on junction temperature are given importance.
2001-10-08 GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-212)
This application note describes the features, parameters, behavior and package details of RF Nitro's NDA-212 GaInP/GaAs HBT MMIC distributed amplifier for RF, microwave or optical amplification.
2001-10-08 GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-210-D)
This application note describes the features, parameters, behavior and package details of RF Nitro's NDA-210-D GaInP/GaAs HBT MMIC distributed amplifier for RF, microwave or optical amplification.
2001-10-08 Design of "PI" and "T" network attenuators for inter-stage buffering
This application note describes the use of "PI" or "T" network attenuators that act as isolators between an amplifier chain or between an amplifier and adjacent component to reduce ripple over frequency.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 8GHz (NBB-402)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-402 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 8GHz (NBB-400)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-400 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 8GHz (NBB-301)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-301 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 6GHz (NBB-401)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-401 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 12GHz (NBB-302)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-302 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-08 Cascadable broadband GaAs MMIC amplifier DC 12GHz (NBB-300)
This application note describes the features, parameters, behavior and package details of RF Nitro's NBB-300 Cascadable Broadband GaInP/GaAs MMIC amplifier for RF and microwave amplification.
2001-10-09 AlGaN/GaN transistor application notes: Surface morphology
This application note describes the typical surface morphology of RF Nitro's AlGaN/GaN transistor structures grown on SiC or sapphire.
2001-10-09 AlGaN/GaN transistor application notes: Summary of physical parameters
This application note shows a tabular summary of the physical parameters of AlGaN/GaN semiconductor crystals.
2001-10-09 AlGaN/GaN transistor application notes: Substrate selection
This application note describes the available substrate materials that can be used for GaN epitaxial growth. Features and characteristics of substrate types are given importance to guide users for right material selection.
2001-10-08 AlGaN/GaN transistor application notes: Insulating GaN buffer layers
This application note explains RF Nitro's technique in insulating GaN films that is required for high-performance transistor applications.
2001-10-08 null
This application note describes non-destructive characterization techniques for RF Nitro's NES series of epitaxial wafer.
2013-07-04 Understanding the control characters in JESD204B
Here's a closer examination of the control characters that are employed in the JESD204 interface.
2015-12-22 Top 10 innovative products of 2015
Many companies have introduced products in preparation for the growing IoT. There are also innovations in computing devices, where chips have not only become smaller but more powerful as well.
2013-02-12 PHY performance metrics for JESD204B transmitter
There are several metrics to be evaluated when assessing the performance of the PHY for a JESD204B transmitter.
2003-07-02 Intersil partners with ViXS for video-over-WLANs
In an effort to enable the oxymoronic combination of high-quality video-over-wireless LANs, Intersil Corp. has partnered with ViXS Systems.
2012-05-08 A primer on JESD204 standard for ADCs
Learn about this digital interface standard and its design implications.
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