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2002-12-13 Vishay rolls RF transistors in smaller packages
Vishay Intertechnology Inc. is offering its RF transistors in a new 3-pin SOT490 package that occupies a footprint of 1.6-by-0.85mm
2002-07-19 Vishay RF transistors suit 3GHz, 12GHz apps
The TSDF2005W and TSDF2020W bipolar RF transistors from Vishay Intertechnology feature a 25GHz transition frequency
2008-04-21 Transistor assures peak power for UHF broadcasts
Freescale Semiconductor Inc. has introduced a 50V laterally diffused MOS (LDMOS) RF power transistor, which the company says is designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
2002-09-13 Tachyonics develops low noise RF transistor
Tachyonics Co. Ltd has announced that it has developed an RF transistor that features a NF <1dB at 2GHz, 2V.
2007-04-23 Small signal RF-transistor: S-Parameters, Noise-Figure and Intermodulation
With the increasing need to reduce development time, RF designers are increasingly employing simulation tools which need accurate device data. This note is intended to help understand the origin of the values required and to reconstruct a similar setup for own analysis and verification
2008-12-23 Rugged RF power transistor released
HVVi Semiconductors Inc. has released the company's first product for radar applications in the UHF band that uses its High Voltage Vertical Field Effect Transistor architecture. Operating across the 420-470MHz band, the HVV0405-175 is a fully qualified 175W RF power transistor optimized for gain and ruggedness.
2010-07-12 RF transistors deliver up to 2kV HBM ESD protection
The new RF transistors form Infineon Technologies comes with ESD protection for reliable, high- sensitivity wireless communications device designs
2008-11-27 RF transistors deliver high performance at wide bandwidth
TriQuint Semiconductor has announced the availability of a new high power discrete RF transistor family for broadband applications including radar, signal jammers and wireless communications.
2007-05-22 RF transistor suits WiMAX applications
Nitronex Corp. has developed a 28V, 100W GaN high electron mobility transistor (HEMT) for WiMAX applications
2012-09-04 RF transistor aimed at secondary surveillance radar aviation apps
Microsemi's 1011GN-700ELM is based on GaN on SiC technologies, and operates at 1030MHz and supports short- and long-pulsed extended length message.
2007-07-05 RF power transistors overcome Doherty limits
Freescale has released new power transistors that enable wireless base stations to exploit the full potential of the Doherty architecture.
2002-12-20 NEC nitride power transistor delivers 2.3W output
NEC has developed a nitride semiconductor power transistor capable of 2.3W power amplification in the sub-millimeter band (30GHz
2005-09-08 Infineon sells RF transistor line to Peak Devices
German chip maker Infineon Technologies AG has sold its "PTB" series of bipolar RF transistors - including wafers, die, packages, lids and specialized assembly equipment - to specialist RF transistor maker Peak Devices Inc. Sept. 6.
2004-07-09 Infineon RF transistors deliver reduced memory effect
Infineon announced the next generation of its GOLDMOS LDMOS die technology for high-performance, high-power RF transistors
2005-04-26 Freescale RF power transistor cuts operating expenses
Freescale's new RF power transistor is designed to reduce transmitter power consumption and operating costs for digital and analog television broadcast apps.
2010-05-26 Dual-path RF transistors save cost in TD-SCMDA amps
Freescale Semiconductor has developed two LDMOS RF power transistors optimized for power amplifiers in base stations serving TD-SCDMA wireless networks
2003-06-16 Cree Microwave RF transistor offers >13dB gain
The company has released the CRF-24010, a Class AB 10W silicon carbide device that is based on the company's 2G 48V MESFET process.
2009-07-01 Clamping of high power RF transistors and RFICs in over-molded plastic packages
This application note provides customers with a guide for mounting high power RF transistors and RFICs in over-molded plastic (OMP) packages by clamping down the RF power device in the power amplifier housing
2014-11-20 C-based RF transceiver to extend battery life
A California-based company is promising weeklong battery lifetimes for smartphones by switching silicon to carbon-based semiconductors.
2004-07-05 Anadigics selects Emcore as RF wafer supplier
Anadigics Inc. has selected Emcore Corp. to be its primary supplier for all RF materials
2004-03-31 Agere devices reduce RF transistor packaging costs
Agere Systems has announced five RF overmolded plastic packaged transistor products that will lower the overall costs of wireless basestation amplifier equipment.
2010-11-11 75W GaN RF transistor delivers high peak efficiency
RF Micro Devices says GaN RF delivers superior performance ersus competing GaAs and silicon power technologies
2016-04-18 1.5kW RF transistor from NXP operates up to 500MHz
The MRF1K50H targets applications from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.
2002-01-24 Xicor, Motorola collaborate on Smart Biasing for RF PAs
Xicor Inc. has teamed up with Motorola to provide RF power amplifier (PA) reference platforms for GSM, EDGE and W-CDMA cellular base station applications
2005-03-18 Wafer tester monitors RF chip quality in realtime
Keithley Instruments is now introducing a third-generation on-wafer RF measurement capability with some very promising features that address the conundrum
2009-12-21 VT Silicon, TowerJazz deliver 4G RF front-end IC
VT Silicon has selected TowerJazz for the world's first silicon 4G RF Front End IC capable of meeting the stringent operating requirements of 4G mobile devices
2011-04-18 Using baluns for highly integrated RF modules
Know how to quickly determine the best physical layout for a particular Marchand balun that may fit their HBT and pHEMT push-pull amplifiers, balanced mixers, or any one of numerous applications.
2012-09-25 TriQuint wins DARPA contract to up performance of RF power amps
The Near Junction Thermal Transport effort will build on TriQuint's advanced GaN on silicon carbide technology and the reliability of its modern RF ICs
2007-08-24 TriQuint to acquire fabless RF firm
TriQuint Semiconductor has entered into a definitive agreement to acquire Peak Devices, a privately held, fabless semiconductor firm that focuses on RF discrete transistor technology.
2007-06-01 Transistor manages 300W over full UHF band
NXP's BLF878, said to be the first true 300W UHF transistor in high voltage generation 6 LDMOS, promises to deliver 300W over the full UHF band with high linearity and ruggedness
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