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2002-05-22 Toshiba ships extended C-band GaAs FET
Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range
2010-06-11 GaAs FET power amps rated for 18W, 30W
Toshiba America Electronic Components Inc. (TAEC) has expanded its Ku-Band GaAs FET lineup with two higher output power devices rated for 18- and 30W
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2012-06-28 GaAs FETs target microwave radios
Toshiba's TIM5359-16EL and TIM5964-16EL gallium arsenide FETs support point-to-point and point-to-multipoint terrestrial communications, and BUCs support satellite communications
2005-02-14 SOT-89 FETs offer low cost, high linearity
Agilent announced two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5-by-4.1-by-1.5mm SOT-89 surface-mount package.
2007-06-25 Toshiba launches GaAs FETs, RF devices
TAEC featured an array of C-, X- and Ku-band gallium arsenide (GaAs) FETs developed by Toshiba Corp. as well as a broad line-up of RF and small signal devices at this year's IEEE MTT-S event.
2005-10-25 Chipset targets millimeter wave apps
Mimix Broadband announced the introduction of a gallium arsenide MMIC 13GHz/15GHz chipset that consists of a highly integrated image reject receiver and transmitter, and compact, two stage power amplifier.
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