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2016-03-11 ISSCC: RF CMOS on the edge of transceiver chain
At the ISCC, Steve Ohr finds that what has happened is not a replacement of GaAs power amps by RF CMOS amps. The RF power amp function is performed at the edge of a radio transceiver chain.
2007-03-01 IP options grow for new processes
Silicon foundry specialist Jazz Semiconductor Inc. is expanding its portfolio of intellectual property (IP) cores for its recently launched 0.13?m RF process
2007-02-19 Infineon claims 'first' silicon-based LNAs
Infineon claims it is the first semiconductor company to release a commercial silicon-based LNA with performance superior to that of more expensive GaAs-based devices
2003-03-25 IMEC, NSC partner on process technology development
IMEC and National Semiconductor have entered a four-year contract to jointly develop an 0.18?m and follow-up generation of SiGe-based BiCMOS process technology.
2002-12-10 IC startups chase new technology
Entrepreneurs arrived in the U.S. last week offering chips they said would spur the development of multiprotocol radios, full-motion video on cellphones and wideband WLANs, among other next-generation products.
2002-11-28 IBM inks process development pact with Chartered
IBM Corp. and Chartered Semiconductor Mfg Pte have signed a joint development and manufacturing agreement that will result in a common process platform starting at the 90nm node
2005-09-05 HBTs deliver 0.75dB noise at 6GHz
Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices.
2010-02-18 Grace Semi CEO outlines speed growth plans
Grace Semiconductor CEO and president Ulrich Schumacher explains to EE Times Europeon he plans to speed up the foundry's growth
2015-07-15 E-band cost, reliability concerns in MMIC packaging
Traditional semiconductor packaging approaches either cost too much or suffer from signal integrity issues. However, new techniques are becoming available that can address these problems
2005-04-18 Designing an optimal wireless SoC
The ultimate challenge in designing high-speed chips in wireless devices lies in the integration of the RF transceiver into an SoC.
2005-12-28 Customer tips Infineon's foundry market entry
Infineon has entered the foundry market with the aid of its French affiliate Altis Semiconductor SA, according to first customer Toumaz Technology
2002-02-27 Conexant, Carlyle to form specialty foundry firm
Conexant Systems Inc. and The Carlyle Group have entered into a definitive agreement to form a specialty foundry company.
2002-03-19 Conexant, Carlyle Group form specialty wafer company
Conexant Systems Inc. and The Carlyle Group have formed a new specialty foundry company located in Newport Beach, California. Further details, including the name of the new company, will be announced later.
2002-05-08 Conexant names foundry spin-off
Launched to serve the mixed-signal and RF semiconductor segments, Jazz Semiconductor will be christened May 6 and will occupy the fabrication facility located at Conexant's headquarters in California
2005-03-10 CMOS process offers high integration
Jazz Semiconductor announced the availability of a 17GHz vertical PNP (VPNP) module on its 0.18?m RFCMOS platform
2002-06-19 Chip industry tackles escalating mask costs
The rapid increase in the cost of photomask sets for advanced IC processes has made a lot of news in recent months.
2005-09-13 Chartered Semi's new solutions suit consumer, wireless apps
Chartered Semiconductor announced the availability of high-performance value-added solutions for advanced consumer and wireless products
2002-05-17 British wafer maker weighs site in Singapore
Compound semiconductors, including proprietary "strained" silicon technology, could be a part of a planned foundry in Singapore if U.K. epitaxial wafer supplier IQE plc opts to locate its Asia-Pacific headquarters in the city-state.
2003-01-16 Avnet signs distribution agreement with TriQuint
Avnet Electronics' RF and Microwave division has signed a North American distribution agreement with TriQuint Semiconductor Inc
2003-01-20 Avnet Electronics, TriQuint enter distribution pact
Avnet Electronics' RF & Microwave division has agreed to distribute TriQuint Semiconductor's products throughout North America
2008-12-10 Automotive radar system to use Infineon chip
Infineon Technologies AG has announced that Robert Bosch GmbH will use a chip from Infineon's Radar System IC (RASIC) family for Bosch's next-generation automotive radar system, the LRR3 radar sensor system.
2002-02-08 Atmel inks alternate source deal for Motorola's 0.355m process
Atmel Corp. and Motorola's Semiconductor Products Sector have concluded an agreement to second source Motorola's 0.355m RF BiCMOS SiGe:C and copper inductor wafer process.
2002-05-21 AIXTRON inks deal with AmberWave
AIXTRON AG has signed a license and development agreement with AmberWave Systems Corp. for CVD equipment and strained silicon technology.
2007-03-01 Airoha joins pre-.11n game
RF chip designer Airoha Technology Corp. is getting into the game for pre-802.11n chips, anticipating volume production of a single-band transceiver toward the end of this quarter.
2005-06-21 AC characteristics of ECL devices
This app note provides a general overview of the ac characteristics that are specified on the ON Semiconductor data sheets for MECL 10K, 10H, 100H, ECLinPS, ECLinPS Lite, and GigaComm SiGe devices.
2003-05-16 5.8GHz RF is focused for analog vets
After years of lagging behind on different ventures, Micro Linear Corp will concentrate on 5.8GHz RF products.
2014-01-16 3D integration leads to robust I/O performance, says IBM
IBM fellow Jon Casey tells EE Times that the semiconductor industry needs to embrace chip stacking amid a slowdown in Moore's Law and the rise of data-driven applications
2007-12-14 'First '10Gbit/s transimpedance amps offer improved sensitivity
Nanotech Semiconductor has unveiled a new family of 2.5Gbit and 10Gbit TIAs that offers at least 3- to 4dB more sensitivity at each data rate compared to existing solutions, typically in SiGe processes.
2005-10-03 Process diversity is key to effective RF design
Optimum solutions for RF applications design often require a combination of several semiconductor process technologies
2002-01-30 Micrel buffer offers >7GHz bandwidth
The SY58016 differential CML buffer offers -3dB bandwidth >7GHz, 45ps max rise/fall time, <1.5ps RMS jitter, and internal 50-ohm termination.
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