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2002-11-08 Toshiba SiGe HBTs have 34 percent smaller packaging
The MT4S100T and MT4S101T SiGe HBTs will now be available in the proprietary TESQ package that measures 1.2-by-1.2-by-0.52mm - 34 percent smaller than the 4-pin SOT-343 surface-mount package
2003-02-05 SiGe transistors match noise level of GaAs devices
Toshiba Corp. has developed high frequency SiGe transistors that are capable of matching the low noise level of GaAs devices
2003-07-17 NEC SiGE transistor suits wireless LAN, cordless telephones
NEC Compound Semiconductor Devices Ltd and NEC Electronics GmbH have released a silicon germanium (SiGe) bipolar transistor called NESG3031 that was developed with the company's SiGe Heterojunction Bipolar Transistor semiconductor process technology (UHS3 process).
2003-07-17 NEC SiGE transistor powers wireless LANs
NEC Compound Semiconductor Devices and NEC Electronics GmbH have released a SiGe bipolar transistor called the NESG3031.
2002-07-17 NEC announces 5GHz SiGe transistor for wireless apps
NEC Compound Semiconductor Devices Ltd has announced the release of a series of SiGe transistors for HF amplifier apps in wireless comms
2015-07-29 Extending Moore's Law: Progress underscores SiGE, nm-ICs
Looking closer at the industry, much attention has been devoted to silicon-germanium (SiGe) heterojunction technology as the next step in building silicon-based ICs down below 10nm
2002-09-13 Tachyonics develops low noise RF transistor
Tachyonics Co. Ltd has announced that it has developed an RF transistor that features a NF <1dB at 2GHz, 2V
2009-05-06 Sykworks injects LNAs with pHEMT, SiGe tech
Skyworks Solutions Inc. has unveiled a new suite of LNAs featuring pseudomorphic high electron mobility transistor (pHEMT) and silicon germanium (SiGe) technologies.
2007-02-27 SiGe HBT amplifiers roll for two-way radios
California Eastern Laboratories has announced the availability of a medium-power SiGe HBT transistor amplifier from NEC.
2006-10-18 Renesas SiGe MMIC touts 'lowest' dissipation
Renesas claims its 3.3V SiGe MMIC power amp delivers high gain at the industry's lowest dissipation level for a SiGe MMIC
2007-03-01 Power transistor touts 'highest' performance level
The new power transistor from Renesas is for use in products operating in the 5GHz and 2.4GHz bands, such as WLAN terminals, digital cordless phones and RF tag readers/writers
2002-04-19 Philips SiGe process targets optical network chips
Philips Electronics has announced the availability of the QUBiC4G semiconductor process that combines high-speed SiGe technology with the passive component integration, substrate isolation, and dense logic capabilities of their QUBiC4 BICMOS process
2007-11-09 NXP unrolls transistor chip for mobile devices
NXP Semiconductors has introduced the first of a series of silicon-based discrete solutions, with the release of the BFU725F microwave NPN transistor
2014-06-12 IBM bolsters RF foundry with SOI, SiGe
The chipmaker launched additional processes for fabricating RF chips including a 130nm/180nm hybrid SOI and 90nm SiGe BiCMOS, both run in Intel's Burlington fab, which is reportedly up for sale
2004-07-28 AWR, TSMC team up for SiGe design platform
Applied Wave Research and TSMC will jointly develop and deliver a design platform for TSMC's 0.35?m silicon germanium process.
2002-09-09 Atmel preps SiGe/BiCMOS process for RF apps
Atmel Corp. will emphasize SiGe on BiCMOS to realize power and cost advantages in high-volume mixed-signal designs as it moves to 100GHz transistor frequencies.
2004-06-18 TI outlines new options for chip scaling
Texas Instruments Inc. (TI) revealed that its semiconductor research teams have developed cost effective techniques to lower chip power consumption, and a new approach to increase overall performance.
2002-08-12 TI launches latest bipolar-CMOS process
Texas Instruments Inc. has developed its latest SiGe complementary bipolar-CMOS manufacturing process, the BiCom-III, which integrates both NPN and PNP-type bipolar transistors
2000-02-01 The future of mixed-signal design
I hear two contradictory things regarding mixed-signal IC design. One set of voices says the systems-on-chip (SoC) of the future will be large mixed-signal systems, and the proportion of these being built will double from about 33 percent currently to 66 percent by 2005. The other set of voices says everything will be big digital chips constructed in ever-deeper submicron CMOS, in that the ASICs of the future will use as many 15 million logic gates, but that the analog and mixed-signal circuitry will be left off-chip.
2012-10-23 TCAD eases FinFET design and variability analysis
FinFET is the first fundamental change in transistor architecture since the time MOSFET replaced bipolar transistor as the transistor of choice for logic applications
2004-02-02 Strained SOI on the move to mainstream
The advantage of strained silicon lies in its electrical properties. The crystalline lattice of the top, electrically active layer of silicon is strained so that electric charges flow faster.
2004-01-29 Sirenza amplifier has internal regulated bias circuit
Sirenza Microdevices has expanded its silicon germanium (SiGe) product portfolio with the release of the SGB family
2011-02-07 Single stage 5-6 GHz WLAN LNA with BFU730F
The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110 GHz fT SiGe:C BiCmos process
2007-02-09 Sematech to advance planar solution devt for 22nm
Sematech front-end engineers will combine planar CMOS approaches with new channel materials to develop transistors for the 22nm half-pitch technology generation.
2011-11-23 Research targets HBT device running at 500GHz
The SiGe:C heterojunction bipolar transistors combine high-density and low-cost integration, making them suitable for consumer applications, noted Imec
2009-01-23 Power amplifiers on the hot seat
A virtual "sit down" with some leaders in the industry discussed where power amplifier technology is, and where they think it is going.
2002-10-08 Motorola optimizes chip technology for wireless apps
Motorola Inc.'s Semiconductor Products Sector (SPS) has noted that they have made enhancements on its SiGe:C technology for wireless applications
2016-03-11 ISSCC: RF CMOS on the edge of transceiver chain
At the ISCC, Steve Ohr finds that what has happened is not a replacement of GaAs power amps by RF CMOS amps. The RF power amp function is performed at the edge of a radio transceiver chain.
2009-09-16 Intel preps 32nm chip launch by year's end
Intel Corp. said its 32nm production wafers are now moving through its D1D fab in Oregon and would be in support of planned Q4 revenue production.
2003-03-25 IMEC, NSC partner on process technology development
IMEC and National Semiconductor have entered a four-year contract to jointly develop an 0.18?m and follow-up generation of SiGe-based BiCMOS process technology
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