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2003-09-01 Identifying front-end challenges for 90nm design
FEOL scaling is about density improvement while simultaneously improving transistor performance
2003-10-02 High-k, strained Si leaving the lab
With performance improvements getting harder to wring out of CMOS by transistor shrinks, researchers are increasingly turning to strained silicon, high-k oxides, and different types of on-chip silicon-crystal orientation
2005-09-05 HBTs deliver 0.75dB noise at 6GHz
Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices
2010-10-26 Gennum taps TowerJazz SBC18 process for video crosspoint switch
Gennum to use 0.18-micron SiGe BiCMOS process to make 290x290 crosspoint switch
2003-03-14 GaAs still dominant in cellphone RF
Despite the promotion for silicon germanium and CMOS for wireless transceiver ICs, GaAs still dominates among cellphone power amplifiers, according to a new study released by Strategy Analytics.
2006-10-02 Front-end module design enables MIMO market
Front-end module suppliers must develop more efficient, lower-current-consuming modules to enable the MIMO market.
2013-07-30 Fast turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX
This application note provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 5-6GHz WiFi (WLAN) LNA.
2013-07-29 Fast turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX
Know the circuit simulation, schematic, layout, BOM and typical EVB performance for a 2.4-2.5GHz WiFi (WLAN) LNA.
2013-07-31 Fast turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730F
Understand the circuit simulation, schematic, layout, BOM and typical EVB performance for a 2.4-2.5GHz WiFi (WLAN) LNA.
2016-02-03 Exploring Samsung's 14 nm LPE FinFET
Samsung has been gearing up for the launch of its 14 nm Low Power Plus (LPP) process used in the Exynos 8 SoC. In this article, we look into the changes we should expect.
2013-06-20 Employing 2.3-2.7GHz LNA with BFU730F
Here are circuit, layout, BOM and performance information on 2.3-2.7GHz LNA equipped with NXP's BFU730F wide band transistor
2003-02-11 Compound-semiconductor IC to grow by 22 percent in 2007
The compound-semiconductor IC market is expected to experience an average annual growth rate of 22 percent from 2002 through 2007, said IC Insights.
2003-09-11 Chip technologies from IBM promise faster transistors
IBM announced two milestones that could enable the IT industry to produce higher performing, lower power devices in the near future.
2005-09-13 Chartered Semi's new solutions suit consumer, wireless apps
Chartered Semiconductor announced the availability of high-performance value-added solutions for advanced consumer and wireless products.
2005-06-17 ASMI, Freescale extend collaboration on strained silicon, SOI
ASM International NV and Freescale Seminconductor Inc. are collaborating on developing and applying strained silicon for advanced CMOS transistors used in mobile computing, communications and logic devices.
2014-01-24 Apple taps Samsung 28nm HKMG process for A7
Chipworks' Sinjin Dixon-Warren dissects the front end of line transistor structure used in the A7, with comparison to advanced technologies used by both Apple and other vendors
2005-02-16 SiPs offer alternative to SoCs for comms
The key to bringing the different parts together to create integrated plug-and-play system solutions lies in SiP technology.
2003-05-05 RF CMOS process supports basestation integration
Austriamicrosystems is providing foundry service for a 0.35?m RF-CMOS process licensed from Taiwan Semiconductor Mfg Corp.
2002-06-19 Chip industry tackles escalating mask costs
The rapid increase in the cost of photomask sets for advanced IC processes has made a lot of news in recent months.
2003-11-25 Toshiba designer takes path of upward mobility
Delving into 'new transistor technology' is all in a day's work for Toshiba's Shinichi Takagi
2005-09-16 Silicon germanium process heralds fast RF
Commodity RF ICs may ride to unheard-of frequencies on the strength of a new SiGe BiCMOS process
2006-05-15 PA suits WLAN terminals
Renesas announced a 2.4 GHz/5GHz dual-band SiGe monolithic microwave IC as a power amplifier for WLAN terminal transmission power amplification
2003-10-17 ON Semi crosspoint switch suits networking apps
ON Semiconductor has introduced the NBSG72A SiGe-based high bandwidth, fully differential crosspoint switch with output level select capabilities
2016-01-19 A tech walkthrough of metal gate I/O transistors
The input/output (I/O) transistor is the workhorse of the metal gate CMOS transistors, yet noone really talks about it. In this article, we'll see why it is worth a look
2005-08-01 CMOS takes a stab at deflating GaAs' RF dominance
The threat from RF CMOS and BiCMOS with SiGe implants was the hot topic at the recent International Microwave Symposium
2009-12-21 VT Silicon, TowerJazz deliver 4G RF front-end IC
VT Silicon has selected TowerJazz for the world's first silicon 4G RF Front End IC capable of meeting the stringent operating requirements of 4G mobile devices.
2004-04-23 VLSI papers weigh 65nm, new circuits
While technologists look to 65-nanometer nodes, circuit designers by and large are two generations back.
2014-09-12 Toshiba TFETs promise MCUs ultra-low power edge
The TFETs are fabricated using a quantum tunnelling principle to achieve ultra-low power LSI operation as a substitute to the conventional MOSFETs.
2007-12-14 Toshiba details 32nm advancements for system LSIs
Toshiba has unveiled advancements in three basic technologies for 32nm generation system LSIs and beyond.
2009-01-06 Top 15 challenges to conquer for 22nm
What are the big challenges involved at the 22nm node?
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