Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > siliconix

siliconix Search results

?
?
total search86 articles
2008-01-14 Spdt analog switches feature very low on-resistance
Vishay's new spdt analog switches offer a very low 3.6次 typical and 4.2次 maximum on-resistance with flatness of 0.4次 typical.
2005-02-17 Quiet JFET features nearly zero popcorn noise
Linear Integrated Systems' new JFETs provide low noise at both high and low frequencies with a narrow range of saturated drain current and low capacitance.
2007-07-18 Quad SPST CMOS analog switch debuts
Vishay Intertechnology Inc. released two series of quad SPST CMOS analog switches that combine high switching speeds with high signal bandwidth for use in a wide range of switching applications.
2007-03-02 Printer power supply design cuts power draw
ON Semiconductor's latest GreenPoint reference design for 40W power supplies used in desktop printers provide active-mode energy efficiency above 83 percent.
2008-10-24 Power MOSFETs tout industry-leading features
Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of a new 25V n-channel device offering the industry's lowest on-resistance and on-resistance times gate charge.
2007-08-20 Power MOSFETs feature 1.2V gate-to-source voltages
Vishay Intertechnology has introduced power MOSFETs with on-resistance ratings at a 1.2V gate-to-source, to help designers simplify power management circuitry while extending battery run times.
2008-04-11 pMOSFET claims industry's thinnest profile at 0.59mm
Vishay Intertechnology Inc. has released a new 20V p-channel TrenchFET power MOSFET in a MICRO FOOT chipscale package with the industry's lowest profile and on-resistance for this device type.
2012-04-04 Online simulation tool targets DC/DC circuits
Vishay's free PowerCAD Simulation tool allows the designer to perform DC, transient and startup simulations with visibility of all the circuit node waveforms.
2008-11-21 N-channel MOSFET claims 'lowest' on-resistance
Expanding its family of Gen III TrenchFET power MOSFETs, Vishay Intertechnology has launched a 20V n-channel device touted to have the lowest on-resistance and on-resistance times gate charge.
2007-01-24 MOSFETs offer better thermal performance
Vishay is adding new n-channel 20V, 30V and 40V devices to its PolarPAK family of power MOSFETs with double-sided cooling, giving designers a new way to reduce system size and cost through better MOSFET thermal performance.
2007-12-14 MOSFET/Schottky device up DC/DC converter efficiency
Vishay's new power MOSFET and Schottky diode device is said to improve operational efficiency by up to 6 percent in DC/DC conversion applications
2012-07-05 MOSFET claim lowest on-resistance for n-channel devices
Low on-resistance ratings down to 9.4 milliohms at 4.5 V of Vishay's new SiA436DJ MOSFET improve efficiency and cut power consumption.
2008-09-02 IR turns down Vishay's takeover offer
Fighting to stay independent, International Rectifier Corp. has dismissed the unsolicited takeover bid by rival Vishay Intertechnology Inc.
2002-08-15 IIC-China moves to Guangzhou, Chengdu for Fall show
International IC-China expands its reach to Guangzhou and Chengdu with IIC-China Fall 2002.
2010-06-23 Four-channel analog mux fits high-reliability apps
Vishay Intertechnology Inc. offers a high-reliability version of the DG409, a dual four-channel differential analog multiplexer.
2003-03-26 Fairchild eyes GEM deal for proliferation of MOSFET packs
Fairchild Semiconductor Corp. is negotiating with GEM Services Inc. to make the latter a third-party licensor of the technology and tooling for Fairchild's new "bottomless" MOSFET BGA and flip-leaded molded packages.
2010-05-06 Estimating junction temperature by top surface temperature in power MOSFETs
The thermal data provided on MOSFET datasheets is usually limited to thermal impedance between junction-to-lead and junction-to-ambient.
2008-05-08 DC-to-DC design guide
Manufacturers of electronic systems that require power conversion are faced with the need for higher-density DC/DC converters that perform more efficiently, within a smaller footprint, and at lower cost〞despite increasing output loads.
2012-04-30 Boost PMIC performance by optimizing package devt during design
Know the advantages of using a QFN device as opposed to BGA, from both a performance and cost viewpoint.
2008-06-02 Boost DC/DC converter efficiency at higher frequencies
How can you increase the efficiency of your DC/DC converter design across its load range for higher switching frequencies? One method is to focus on reducing the recovery charge and forward voltage drop of the low-side MOSFET. Chips that integrate a Schottky diode with the MOSFET have several benefits at higher frequencies when compared to a standard trench MOSFET. Here's what you can expect from such a design.
2009-05-21 AnalogicTech stays 'fabless without foundries'
To explain the current issues in analog, EE Times caught up with Richard Williams, president, CEO and chief technology officer of Advanced Analogic Technologies Inc., a fabless analog chip vendor.
2003-12-16 Analog switches target feature-rich cellphones
Fairchild Semiconductor International introduced a family of analog switches designed to increase audio quality while switching signals among three or more outputs.
2005-05-30 Analog switches simplify design
Offering low on-resistance and low-level logic control through the full voltage range of 1.6V to 4.3V, the new analog switches from Vishay are targeted at end products such as cellphones, STBs, PDAs and media players
2011-10-20 Analog switch features 2.5次 on-resistance
Vishay's SPST switches claim to deliver low power dissipation and low-switching noise performance.
2015-02-23 20V n-channel MOSFET brings power density to mobile devices
Vishay unveils a 20V n-channel TrenchFET power MOSFET that features 25A continuous drain current and 2,500V ESD protection for portable devices such as battery chargers, smartphones and tablets.
2015-06-25 20V MOSFETs slash space, power in mobile devices
Vishay unleashed a TrenchFET 20V n-channel MOSFET in the chipscale MICRO FOOT 0.8mm x 0.8mm package with an ultra-thin 0.357mm profile, aimed at smartphones, tablets and wearables.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top