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2006-08-18 Q2 sales of China's Memory Devices grew 151
China's Memory Devices said in a statement that sales for Q2 of 2006 shot up 151 percent from 2005 to $142 million, while net profit rose 82 percent to $3 million
2005-03-21 Philips claims phase-change memory low-voltage progress
A team from Philips Research (Eindhoven, The Netherlands) is due to publish details of a chalcogenide non-volatile phase-change memory cell made from doped antimony-telluride which has a low threshold voltage and which should therefore scale with future integrated circuit manufacturing processes
2008-06-16 Persistent memory makes cars smarter
This article examines approaches to make automotive electronic systems more customizable and experience-based. A method for experience-based customization as well as the use of distributed persistent memory as an available technology is proposed. Total recall is defined as the ability to recall information from persistent memory that is acted on in conjunction with sensor input
2010-08-03 Micron reinforces stand on phase-change memory
Micron Technology Inc. confirmed its support for its phase-change memory product line and R&D after an article by Micron senior fellow Greg Atwood excited considerable response from the community
2004-09-13 BiTMICRO's new patent underscores position in solid-state disk industry
It appears that the moment a storage device boosts capacity; it becomes difficult to perform the I/O functionalities, such as write, read and erase, during an operation.
2007-11-22 Biological memory chip hints at cyborg machines
Researchers at Tel Aviv University in Israel are developing a hybrid biological-solid state memory that could be linked to conventional computer hardware to create cyborg machines.
2012-01-17 12-atom magnetic memory beats HDD
IBM Research scientists have created an atomic magnetic memory that cut number of atoms needed to store one bit of data from one million to only 12 atoms
2010-07-22 US lab develops solid-state cooling technology
The University of Maryland Energy Research Center (UMERC) is developing smart metals that change shape when absorbing or releasing heat.
2006-04-21 UMC fabs Sonos memory IC
United Microelectronics Corp. has made a new type of memory on a foundry basis for Solid State System Co.
2015-03-30 Toshiba samples 48-layer, 2bit/cell flash memory
Toshiba's 48-layer stacked cell flash memory BiCS enhances reliability of the write/erase capability and boosts write speed in SSDs. The device is already having sample shipments
2014-02-06 Storage Visions 2014 highlights innovative memory tech
Memory architectures, SSDs and flash technology were well represented at this year's Storage Visions conference, including the show's awards that showed visionary companies and products
2008-04-07 Startup debuts enterprise solid-state storage
Startup Fusion-io has introduced its ioDrive, a flash memory-based storage device that can be installed at multiple points in existing data centers or workstations without any changes to applications, infrastructure or management software
2008-01-16 Solid-state drives aim to edge out HDDs
The landscape is shifting in the emerging market for solid-state storage drives that could threaten the power-hungry HDDs
2015-04-22 Solid-state driver vendors choose NVMe for servers
The interest in NVMe is growing as more vendors begin supporting the standard. HGST claims that customers now better understand the operational benefits of NVMe and limitations of PCIe-based SSDs.
2008-09-24 SNIA steps up solid-state storage drive
SNIA announced the formation of SSSI, which will serve to foster the growth and success of the market for solid-state storage in both commercial and consumer environments
2001-09-28 Selecting memory devices for an SSD
This application note discusses the types of memory devices available for the Solid State Disk (SSD) of the cpuModules.
2007-03-15 SDIO controller handles SDHC memory cards
QuickLogic's SDIO host controller is now capable of handling SDHC memory cards with greater than 2Gbyte capacities
2013-10-28 SD 3.0 memory card penetration rate to hit 20% in 2014
The maximum bandwidth SD 3.0, also known as UHS-I, offers a transfer speed of 104MB/s (much quicker than SD 2.0's 25MB/s), and a write speed that easily surpasses 10MB/s, stated TrendForce.
2005-05-27 Samsung's SSD is based on NAND Flash memory technology
Samsung Electronics has developed what it touts as the first Solid State Disk (SSD) based on NAND flash memory technology for consumer and mobile PC apps.
2007-04-02 Samsung tips memory chips for content-heavy handsets, CE devices
Samsung's latest memory chip rollouts are aimed at digital CE devices and handsets featuring complex functions and loaded with content-heavy data
2008-06-10 Samsung remains upbeat despite memory slump
Samsung Electronics Co. Ltd gave a progress report on its flat-panel display and semiconductor businesses, saying the LCD segment is seeing strong growth but the IC sector is showing mixed results.
2007-10-26 Samsung debuts 64Gbit MLC NAND flash memory
Samsung Electronics Co. Ltd has developed the world's first 64Gbit multilevel cell NAND flash memory chipusing 30nm-class process technology
2011-05-13 Rambus taps startups to explore next-gen memory tech
Keen on developing potential flash and DRAM successors, Rambus is investing in memory technology startups and lending support to universities researching next-generation memory technologies
2003-06-26 PRAM poised to re-enter memory race
Phase-change RAM, also known as ovonic or chalcogenide memory, appears to have gotten a new lease on life
2016-03-11 Phase change memory advances: Discontinuity, melting
Understand the role of melting during threshold switching and the post-threshold switching conducting state prior to SET state crystallisation.
2015-08-14 Peek inside the first high bandwidth memory
In this teardown article, we reveal the innards of SK Hynix's high bandwidth memory, in AMD's Radeon 390X Fury X graphics card
2012-03-15 PCM progress report no. 6: Recent advances in phase change memory (Part 2
The second installment of this two-part series tackles other recent developments in PCM, including fabrication of a 1 Gb PCM array with a 4F2 cell size.
2008-02-08 Next-gen memory race heats up as bets roll
As the next-generation memory race intensifies with more vendors jumping out of the starting blocks, the question remains if the devices will ever become mainstream parts
2007-05-09 New memory interface touts 10x I/O bandwidth increase
HyperLink NAND, a new memory interface, will reportedly increase I/O bandwidth in flash by more than 10x today's conventional devices
2009-04-17 New JEDEC standard doubles memory interface performance
JEDEC Solid State Technology Association announced the publication of JESD84-A44 MMC ver. 4.4 standard. The new standard offers designers a doubling of the memory interface performance, flexible partition management and improved security options.
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