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2015-06-25 20V MOSFETs slash space, power in mobile devices
Vishay unleashed a TrenchFET 20V n-channel MOSFET in the chipscale MICRO FOOT 0.8mm x 0.8mm package with an ultra-thin 0.357mm profile, aimed at smartphones, tablets and wearables.
2013-04-17 20nm planar cell yields 128Gb NAND flash
Know the key improvements and innovations that are needed to produce the smallest 128-Gb, 3 bit-per-cell product.
2012-06-18 2012 sensor sales to reach $5.7B
IC Insights predicts that semiconductor sensor sales will grow in double-digits each year through 2016 as more system products gain the ability to automatically control and protect themselves, understand movement, detect changes around them, and support new user interfaces.
2013-05-06 200W DVB-T pallet amplifier runs Freescale's LDMOS
Using Freescale's 50V rugged RF LDMOS, The RPAP470860M200 offers high gain, efficiency and power in a small pallet footprint, using advanced broadband RF matching networks and RF LDMOS transistors.
2012-04-19 2.5in HDDs in PCs seen as favorable alternative
Worldwide shipments of 2.5in HDDs to all-in-one PCs are forecast to reach about one million units in 2013, up from virtually zero this year, according to IHS.
2012-01-17 12-atom magnetic memory beats HDD
IBM Research scientists have created an atomic magnetic memory that cut number of atoms needed to store one bit of data from one million to only 12 atoms.
2010-02-03 100V Schottky rectifier saves board space
From Central Semiconductor comes a Schottky bridge rectifier packaged in a HD DIP case to offer a 50 percent reduction in board space compared to four individual Schottky rectifiers in a SMA package.
2010-09-06 1.8A dual POL regulator comes in a small MLPQ package
Semtech Corp. launched the SC283, which the maker says is currently the smallest 1.8A dual-channel regulator for point-of-load (POL) applications. The device incorporates two step-down regulators in an ultra-small, low-profile 2mm x 3mm x 0.8mm, 18-pad MLPQ package, also with integrated VID pins.
2009-02-09 'First' 300mm MTJ fab in U.S. unveiled
Grandis Inc. announced the first 300mm magnetic tunnel junction (MTJ) fabrication facility in the United States dedicated to spin torque transfer-RAM (STT-RAM) memory technology. The recent additions to its MTJ fab enable Grandis to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.
2005-08-08 'Field stop' IGBTs deliver winning punch
Advanced Power Technology's new IGBT modules deliver from 20A to 600A for modules rated at 600V, 50A to 400A for 1,200V modules, and 50A to 300A for 1,700V products.
2010-08-31 $200,000 grant for LED partnership
SiC Systems, Smart Lighting ERC to collaborate on LEDs using large, efficient silicon carbide substrates
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