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2002-10-10 T/R switch for IMT-2000 handset applications
This application note describes a handset T/R switch design that enables its antenna to be electronically connected to either the transmitter or receiver.
2002-10-10 Products that provide 200V/m CW or PM at a distance of 1m
This application note discusses the scenario of how products provide 200V/m CW or PM at a distance of 1m.
2002-12-18 Products that provide 200 V/m cw or pm at a distance of 1 meter
This article provides information on products that provide 200 V/m cw or pm at a distance of 1 meter.
2007-02-16 How to test EMC in semiconductors
This article describes the test methods IEC61967 for EME test of ICs with frequency from 150kHz to 1GHz, and IEC62132 for EMS test of ICs with frequency from 150kHz to1GHz.
2002-10-10 Amplifier research products that provide 5V/m CW or PM at a distance of 1m
This application note discusses the scenario of how products provide 5V/m CW or PM at a distance of 1m.
2002-12-18 Amplifier research products that provide 5V/m CW or PM at a distance of 1 meter
This article provides information on amplifier research products that provide 5V/m cw or pm at a distance of 1 meter.
2002-10-10 Amplifier research products that provide 50V/m CW or PM at a distance of 1m
This application note discusses the scenario of how products provide 50V/m CW or PM at a distance of 1m.
2002-10-10 Amplifier research products that provide 20V/m CW or PM at a distance of 1m
This application note discusses the scenario of how Amplifier Research products provide 20V/m CW or PM at a distance of 1m.
2002-12-18 Amplifier research products that provide 20V/m CW or PM at a distance of 1 meter
This article provides descriptions on amplifier research products that provide 20V/m CW or PM at a distance of 1 meter
2002-10-10 Amplifier research products that provide 10V/m CW or PM at a 1m distance
This application note discusses the scenario of how Amplifier Research products provide 10V/m CW or PM at a distance of 1m.
2002-10-10 Amplifier research products that provide 100V/m CW or PM at a distance of 1m
This application note discusses the scenario of how Amplifier Research products provide 100V/m CW or PM at a distance of 1m.
2002-12-18 Amplifier research products that provide 100V/m CW or PM at a distance of 1 meter
This article describes amplifier research products that provide 100V/m CW or PM at a distance of 1 meter.
2008-09-19 Solar power: The next major energy source
Photovoltaic technology offers a secure domestic power source. Here's a look at the technology that is free from the leash of the oil industry, low in maintenance, high in modularity and scalability, and the only technology capable of meeting the world's long-term energy needs without emitting greenhouse gases.
2013-07-05 NAND flash scaling: 20nm node and below
Here are some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology
2013-07-29 Making 3D NAND flash practical
Learn about the key features and benefits of SMArT scheme which is touted to open the 3D NAND flash era.
2015-12-02 Carbon-reducing technologies target climate change
There is little doubt that the climate is heating up and that it is due to the production of greens-house gases, which have been steadily increasing since the maturation of the industrial revolution.
2011-10-06 Base station-on-a-chip targets LTE, 3G
Cavium has released a new set of chips, the OCTEON Fusion family, which can operate LTE and 3G cell base stations
2013-07-03 The outlook for charge-trapping flash memory
The planar cell structures will enable continued scaling of these charge-trap technologies, while new architectures will emerge and further extend the density-growth trend
2010-03-26 25nm MLC NAND breaks scaling barriers
While most pundits have speculated that NAND has hit the wall, IM Flash Technologies continued their aggressive path scaling with the 25nm 8Gbyte, 2bit/cell MLC NAND
2015-06-15 Taking apart the iPhone 6 Plus battery
TechInsights looked into the iPhone 6 Plus battery, weighing in at 43g, which initially is not standing out from the trend line and does not seem to be special, but being Apple it is nonetheless interesting.
2012-03-01 PCM progress report no. 6: Recent advances in phase change memory (Part 1)
This series looks at some of the most recent phase change memory developments. Part 1 reviews structural and materials advances, focusing on both benefits and challenges.
2015-07-13 IBM surpasses Intel with 7nm node tech
IBM Research claims to have perfected the extreme ultra-violet (EUV) lithography and using silicon-germanium channels for its finned field-effect transistors (FinFETs).
2016-02-03 Exploring Samsung's 14 nm LPE FinFET
Samsung has been gearing up for the launch of its 14 nm Low Power Plus (LPP) process used in the Exynos 8 SoC. In this article, we look into the changes we should expect.
2014-08-28 Examining Intel's embedded DRAM
With its astronomical manufacturing costs, SRAM's viability is being questioned and the industry is looking for alternatives. This article examines an intriguing option in the form of embedded DRAM.
2006-05-01 Chipworks inside TI's DLP chip
Chipworks gets inside Texas Instruments' Digital Light Processor projection device, which is touted to be the one of the benchmarks of the MEMS industry segment.
2014-03-17 CEA-Leti reduces memory gate to 16nm via poly-Si spacer
Aside from the trimmed down gate length, the flash memory from CEA-Leti has over 6V expanded memory windows.
2011-10-13 Benefits of SONOS memory for embedded flash
Here's a discussion on why silicon-oxide-nitride-oxide-silicon memory technology is ideally suited for eFlash.
2012-04-09 Advantages of resistive RAM for next-gen NVM
Here's a discussion on the strengths of hafnium-oxide-based resistive RAM cells, and the main challenges ahead for this technology.
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