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What is a transistor?
An active semiconductor device with three or more terminals. A device used to amplify voltage, current or function as an ON/OFF switch. Transistor is the fundamental building block of computer circuitry.
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2014-04-22 Utilise audio amps for voltage splitting (Part 4)
This instalment focuses on the reducing of noise from voltage splitters.
2014-04-16 Utilise audio amps for voltage splitting (Part 3)
Here's a look at voltage splitters based on power audio amplifiers.
2014-03-17 Utilise audio amps for voltage splitting (Part 2)
In the second part of this series, we discuss some features of power audio amplifiers.
2015-01-07 Using sub-threshold techniques for IC design
The use of sub-threshold techniques can be a powerful way to create circuits that consume dramatically less energy than those built using standard design practices.
2015-06-29 Understanding ultra-low phase noise oscillators
Here is a tutorial on phase noise and jitter. We will also tackle the impact of ultra-low phase noise oscillators on system performance.
2005-06-17 UMC shrinks Nitrided Gate-oxide thickness to 1.0nm
Taiwan semiconductor foundry United Microelectronics Corp. (UMC) revealed that its R&D team has reduced the equivalent oxide thickness (EOT) of nitrogen doped silicon oxide (Oxy-nitride, SiON) gate dielectrics to about 1.0nm using a new nitrogen profile engineering technique.
2003-07-11 UMC explores tool for controlling sub-65nm gate leakage
Researchers at UMC are exploring selective epitaxial growth as a complementary approach to tackling problems of gate leakage in transistors at the sub-65nm node.
2013-01-29 Ultra-low cost flexible display in dev't at UNIST
Polymer-based electronic circuits being developed at the Ulsan National Institute of Science and Technology are expected to open up possibilities for ubiquitous electronics such as flexible displays.
2011-02-04 Tyndall scientists create n-type junctionless transistor
With a 50nm channel length and a cross-section of about 8nm x 12nm, the new junctionless transistor is 30 percent more energy-efficient and could represent simpler manufacturing processes for transistors.
2008-05-15 Tyco offloads RF components biz to Cobham
Tyco Electronics has agreed to sell its RF components and subsystem business to Cobham Defense Electronic Systems, a subsidiary of Cobham plc, for $425 million in cash.
2007-10-09 TriQuint tips green base station power amp
Triquint Semiconductor has started sampling high-voltage GaAs power amplifier transistors it claims substantially increase the efficiency of 3G cellular base stations, leading to meaningful energy savings.
2007-06-01 Transistor manages 300W over full UHF band
NXP's BLF878, said to be the first true 300W UHF transistor in high voltage generation 6 LDMOS, promises to deliver 300W over the full UHF band with high linearity and ruggedness.
2003-12-11 TI's SETMOS said to extend CMOS life
Texas Instruments Inc., together with researchers at the Swiss Federal Institute of Technology of Lausanne and the U.S Air Force Research Laboratory, have described a potential way to use single electron transistors (SETs) to perform logic functions.
2012-09-07 TI leads power management IC market
With 2011 power management revenue of $3.18 billion, up 25 percent from $2.54 billion a year earlier, TI held off STMicroelectronics and Infineon Technologies, commanding 10 percent market share.
2012-06-15 TI describes 28nm CMOS TSV integration
A paper by TI researchers showed results indicating minimal effect on transistors within 4 microns of TSV placement.
2013-05-28 The era of Moore's law winding down, says Broadcom's CTO
Henry Samueli, Broadcom's chief technology officer, believes that once Moore's Law ends, standard CMOS silicon transistors will stop scaling around 5 nm and everything will plateau.
2004-05-31 Tech coalition develops ultra-thin CMOS process technology
STMicroelectronics, CEA-Leti and Aixtron have developed an advanced process technology for the creation of ultra-thin transistor-gate-insulation layers for low-power applications at the 65nm and 45nm CMOS transistor technology nodes.
2011-07-07 TAITRA: TSMC, Intel to battle over 3D chips
TSMC is challenging Intel in the 3D arena as it plans to release 3D chips by the end of 2011.
2002-11-26 Superconducting junctions eyed for quantum computing
Josephson junctions, a superconducting type of transistor, are being investigated as a possible route to scalable quantum computers by a physicist at the University of Michigan.
2012-12-13 Study: InGaAs alternative to silicon at 22nm
MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22nm.
2002-11-26 STMicro SoC device to play crucial role in LHC experiment
STMicroelectronics has started production of the SoC device known as ALTRO, a chip jointly developed by ST and the ALICE Collaboration.
2011-01-26 SrTiO3 offers multifunction possibilities
Researchers have found a way to create a conductive layer on the surface of strontium titanate that offers the possibility of enabling different functions on a single microelectronic device.
2013-03-22 Space and time trade-offs in advanced computing
Here's an examination of real world trade-offs of time and space, and their impact on our modern mobile computing model. Along the way, we touch on relativistic physics, computer science and science fiction, all in an entertaining and informative look at the continuum.
2009-05-22 Solder reflow attach method for high power RF devices in over-molded plastic packages
This application note aims to provide Freescale Semiconductor customers with a guideline for solder reflow mounting of high power RF transistors and ICs in over-molded plastic (OMP) packages.
2012-01-26 Soitec, Sumitomo demo 'smart-cut' GaN wafers
The substrates are produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates.
2005-01-05 Soitec, ADF to develop MuGFETs for 45nm technology
In an effort to accelerate the development of new-generation transistors, Soitec Group has disclosed its participation as the SOI substrate supplier in a development program led by Advanced Technology Development Facility (ATDF), the new independent subsidiary of Sematech for advanced semiconductor R&D.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2004-09-01 SMIC launches high-voltage process for LCD drivers
Chinese silicon foundry provider Semiconductor Mfg Int. Corp. (SMIC) on August 27 announced the development of a high-voltage process technology.
2002-02-19 Signal limiter for power amplifiers
This application note describes how power circuits are designed to effectively maintain a high level of sonic integrity for cost-effective performance.
2002-10-25 Sharp, SEL integrate processor into system-on-glass device
Sharp Corp. and Semiconductor Energy Laboratory Co. Ltd have integrated an 8-bit Z80 processor onto a glass substrate with an LCD.
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