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2011-05-03 ITRS chairman: Tunnel FET possible transistor option
ITRS chairman, Paolo Gargini, believes that a field effect transistor (FET) combined with quantum tunneling can reduce power consumption, while maintaining adequate performance
2010-11-02 EU group targets standby power
The European Union is funding a program that aims to reduce active power by 10-times and eliminate standby power for electronic devices by switching from MOSFETs to tunnel FETs
2015-12-14 Imec showcases next-gen devices to supersede silicon
Imec's R&D programme on advanced logic scaling is targeting the latest and mounting challenges for performance, power, cost and density scaling for future process technologies.
2004-12-17 TSMC, NEC, Renesas, Toshiba describe novel MRAM cells
At the International Electron Devices Meeting (IEDM) here this week, NEC, Renesas, TSMC and Toshiba are expected to describe competitive cell structures for new and emerging MRAM devices.
2016-02-11 Quantum dot nanotubes eliminate need for semiconductors
Michigan Tech is working toward ultra-small flexible electronics that remove semiconductors in favour of the more flexible capabilities of metallic quantum dots and isoelectronic crystals.
2002-12-17 Flash gets a quantum makeover at IEDM
Research at the University of Tokyo and at Advanced Micro Devices Inc. dangles the possibility of using quantum-well technology to breathe new life into Flash memory.
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