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2004-03-15 UDT silicon APDs have 850nm responsivity
UDT Sensors' silicon APDs feature fast response and high sensitivity, with a peak responsivity of 850nm.
2001-10-15 Stability of silicon photodiodes for laser emission measurements
This application note examines the suitability of silicon photodiodes as the transducer, and discusses the calibration accuracy, reproducibility and stability that are likely to be achieved from a commercial company.
2001-10-15 Silicon photodiodes physics and technology
This application note discusses the basic considerations in the design of silicon photodiodes for desired performance characteristics. It also introduces the various parameters used to characterize photodiodes.
2001-10-15 Real-time biomechanical position sensing based on lateral effect photodiode
This application note describes the use of lateral-effect photodiodes for position sensing in biomechanical communication systems.
2001-10-15 Non-contact optical position sensing using silicon photodetectors
This application note examines the various types of silicon photodetectors and discusses the theory of operation and relative disadvantages of each type. An example of optoelectronic instruments utilizing these sensors is also presented
2001-10-16 Neutron hardness of photodiodes for use in passive Rubidium frequency standards
This application note addresses the performance degradation issues of the RFS (passive rubidium frequency standard) photodiode produced by neutron irradiation.
2001-10-15 Lateral-effect photodiodes
This application note describes the operation of lateral-effect photodiodes. It also discusses the trade-offs of using lateral-effect photodiodes and explains how these devices resolve displacement issues.
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