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EE Times Asia - total search?18?articles sort by date sort by relevance
HBT power amp targets wireless infrastructure apps 2012-07-27
RFMD's RFPA2089 is a single-stage InGaP HBT power amplifier that offers high-gain linear operation at a comparably low DC power geared for next generation radios requiring high efficiency ?
RFMD expands 3G, 4G/LTE portfolio 2012-03-09
The PowerSmart product family is geared for multimode, multiband applications such as smartphones, tablets and other data-centric mobile broadband devices. ?
Power amp for WCDMA, LTE/4G apps 2012-03-01
RFMD's 4G LTE and WCDMA power amplifiers claim to deliver top notch efficiency and performance in smartphones and other data-centric connected devices ?
Transmit modules for 3G tout UMTS transmit/receive ports 2012-02-24
The RF3235 and RF3237 are quad-band GSM/GPRS Class 12-compliant that deliver 3G solutions for entry platforms ?
RFMD FEMs deal with high band count, harmonics 2011-02-17
RF Micro Devices Inc. expands its line of front end modules for 3G and 4G switch and signal conditioning applications ?
4G platform raises the bar in data upload speeds 2011-01-19
RF Micro Devices Inc. has announced PowerSmart power platforms, a new series that achieved HSPA+ 4G data upload speeds during independent product testing. ?
75W GaN RF transistor delivers high peak efficiency 2010-11-11
RF Micro Devices says GaN RF delivers superior performance ersus competing GaAs and silicon power technologies ?
VCOs lower energy consumption in base stations 2010-05-25
RF Micro Devices is rolling out a new family of laminate-based voltage-controlled oscillators (VCOs) for cellular infrastructure and other high-performance wireless transceiver applications. ?
Power amp meets TD-SCDMA performance metrics 2010-03-01
The RF7234 and RF3266 PAs deliver superior performance at peak power conditions and ample margin meeting the critical performance metrics of today's TD-SCDMA handsets. ?
RF CMOS switches handle 3G/4G smart phones 2010-02-18
RF Micro Devices has successfully qualified and released its first high-power RF CMOS switch designed for next-generation 3G and 4G smart phones ?
Power amps tailored for 4G LTE apps 2009-08-27
RF Micro Devices Inc. is supplying the RF6276 and the RF3280 power amplifiers (PAs) designed to meet or exceed the data-centric performance requirements of the 4G LTE mobile broadband standard. ?
RFMD beefs up 3G front end lineup 2008-11-25
RF Micro Devices Inc. has expanded its portfolio of 3G front ends with the RF3267 and RF6266 W-CDMA/HSDPA power amplifiers (PAs ?
Power amplifier generates maximum broadband capability 2008-08-18
RF Micro Devices has achieved a major design win on a leading handset OEM's upcoming 3G multimode handset platform. The broadband, triple-path capability provides maximum flexibility, lessening space requirements and hastening time-to-market ?
POLARIS solution powers multimedia handsets 2008-07-15
RF Micro Devices Inc. has commenced volume shipments of its POLARIS RF solutions in support of six new feature-rich multimedia handsets that expected to be available in 2H 08. ?
UMTS transmit system rolls for multiregion 3G handsets 2007-02-20
RFMD has released its RF628x family of products that provides a UMTS transmit system for the implementation of multiregion, multimode 3G handset platforms. ?
RFMD intros complementary components for multimode 3G handsets 2007-02-15
RFMD has introduced a portfolio of complementary cellular components designed to address the increasing complexity of cellular front-ends in multimode 3G handsets. ?
GaN transistors target cellular, WiMAX bands 2006-06-16
RFMD is sampling out a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors for cellular infrastructure and WiMAX base stations ?
RFMD joins DC/DC converter power management market 2005-10-13
RF Micro Devices disclosed that they have recently entered the market for DC/DC converter power management components. ?


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