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DRAM Devices news and hot articles

2006-03-27 Elpida's 512Mbit XDR DRAM devices operate at 4GHz data rate
Elpida's new 512Mbit XDR DRAM devices operate at 4GHz data rate and provide a data transfer rate of 8GBps within a single device for digital consumer electronics apps.
2005-05-26 Micron DDR devices offer increased reliability over standard DRAM
Micron launched a family of Mobile DDR devices, with product samples of multiple densities now available.
2005-01-21 Samsung develops 512MB DRAM for mobile devices
Samsung has completed a working prototype of a 512MB DRAM for mobile products that operates at up to 333Mbps, transmitting 32 bits of data simultaneously.
2004-07-23 Elpida DRAM devices suit digital consumer apps
Elpida launched its latest offering in its line of 0.11��m, high-speed DRAM devices for use in digital consumer apps.
2002-10-11 Designing a Page-Mode DRAM Controller Using MACH Devices
This application note contains the fundamental memory controller design theory and techniques to use programmable devices for the effective design of a memory controller.
2009-11-11 Op amps enable accurate medical devices
The devices are suited for portable medical applications which need high accuracy and low quiescent current.
2009-11-11 Elpida, ProMOS ink DRAM foundry deal
Elpida will provide DRAM process technologies to ProMOS, while ProMOS will provide manufacturing capacity to Elpida.
2009-11-05 CapSense Express��creating reference designs with 1CS/2CS button devices
This application note explains how to create simple reference designs with the CY8C20111/CY8C20121 devices and also demonstrates the functionality of these devices through example projects.
2009-10-29 Integrating 3G radio into embedded devices
This article walks through key decisions to help best integrate 3G technology with your existing hardware and software.
2009-10-28 iSuppli: DRAM rebound will continue to 2010
Global DRAM revenue rose by 35 percent in Q3 09 over Q2 09, following a 34 percent increase in Q2 09 over Q1 09.
2009-10-21 SMIC pushes 40-/55nm devices
Semiconductor Manufacturing International Corp. will extend its 45nm bulk CMOS technologies to 40nm and 55nm geometries.
2009-10-19 UHF devices enable low-cost wireless car apps
The new device family includes UHF transmitters, receivers and transceivers for wireless and car access systems.
2009-10-06 IMEC pushes 3D integration of DRAM on logic
IMEC and its 3D integration partners have prototyped a DRAM chip integrated on top of a logic IC.
2009-09-25 Tiny ESD devices offer improved reliability
Tyco's silicon ESD protection devices measure 0.6mm x 0.3mm x 0.3mm for flexibility in space-constrained apps.
2009-09-24 USB devices target car navigation, infotainment
Cypress expands its automotive-grade portfolio with USB devices for navigation and infotainment.
2009-09-23 Implementing power supply sequencers with power manager devices and PAC-designer LogiBuilder
This application note describes PAC-Designer's LogiBuilder system and shows how it can be used to develop power-supply control logic to be implemented in Lattice Semiconductor's ispPAC-POWR1208 power-supply sequencer IC.
2009-09-11 Using C18/HI-TECH C compiler to interface serial SRAM devices to PIC16F/PIC18F microcontrollers
This application note offers designers a set of firmware routines to access SPI serial SRAM.
2009-09-04 GPON devices support MoCA standard
Broadcom debuts GPON gateway processors that facilitate cost effective optical network terminals.
2009-09-03 ESD protection devices keep HBLEDs lit up
This ESD protection solution for HBLED applications is the first to feature a 100V breakdown voltage.
2009-08-31 RF power devices tip flexibility for TD-SCDMA
Freescale Semiconductor has introduced two final-stage LDMOS RF power transistors for TD-SCDMA networks.
2009-08-19 Trade group remains dubious of Taiwan DRAM plans
Despite the launch of Taiwan Memory Co. (TMC) and its subsequent investment in Japan's Elpida Memory, broader issues of consolidation and high levels of debt among Taiwan's DRAM players remain unresolved.
2009-08-18 Ferroelectric memories exceed DRAM, flash
Yale and SRC researchers recently demonstrated an experimental ferroelectric transistor for FeDRAMs that retained information 1,000x longer than DRAMs, consumed 20x less power and can be scaled to even the most advanced nodes.
2009-08-17 Utilizing extra FC credits for PCI Express inbound posted memory write transactions in PowerQUICC III devices
This application note explains the procedures to utilize the extra FC (flow control) credits for PCI Express inbound posted memory write transactions, which is currently a hidden feature for all of the x8-capable Power QUICC III devices.
2009-07-31 ST taps GlobalFoundries for 40nm low-power devices
STMicroelectronics and GlobalFoundries have teamed up to develop products based on 40nm low-power (LP) bulk silicon technology.
2009-07-29 Can Taiwan DRAM vendors stay independent?
Taiwan's DRAM industry is scrambling to find new ways to survive amid the horrific memory downturn.
2009-07-24 RF power devices see hope in China, LTE push
A new report forecasts that deployment of wireless infrastructure in China and the LTE push in the west will lift RF power device market.
2009-07-22 Survey finds 121% rise in HSPA user devices
A new survey published by the Global mobile Suppliers Association (GSA) found that the number of High Speed Packet Access (HSPA) user devices launched in the market has risen 121 percent over the past 12 months.
2009-07-20 MC9S08SG32 series high-temperature devices design considerations
This application note discusses design considerations and guidelines for automotive designers when using the MC9S08SG32 in a high temperature environment.
2009-07-20 Integrating MEMS-based motion processing devices
Motion processing is the next major disruptive technology that will drive innovation in handheld consumer electronic product design. This article defines a six-axis motion processing solution.
2009-07-14 Circuit protection devices employ air gap tech
Stackpole Electronics Inc. has released two new series of circuit protection devices that comply with IEC61000-4-2; both series employ air gap technology that achieves the lowest possible capacitance.
2009-07-09 MicroSD interface filter fits mobile, computing devices
California Micro devices Corp. has announced the CM1624, an application specific microSD interface protection filter for mobile and computing devices.
2009-07-07 MEMS devices grow, equipment drops
The Information Network releases stats on global MEMS device, equipment, and materials markets.
2009-06-24 UPS devices are overload-protected
PROTECT 3.31 and 3.33 UPS are available from 10 to 120KVA, operate from 230VAC or 400Vac three-phase, with autonomy scalable from three minutes up to several hours.
2009-06-22 Tiny load switches fit portable devices
TI has rolled out a family of integrated load switches with controlled turn-on and quick output discharge to simplify subsystem load management.
2009-06-17 Solder reflow guide for surface mount devices
This application note provides general guidelines for a solder reflow and rework process for Lattice surface mount products. The data used in this document is based on IPC/JEDEC standards.
2009-06-12 Passive mixer tailored for UHF-900MHz devices
Peregrine Semiconductor Corp. has released the 50? PE4150 quad MOSFET core device, designed for mixer designs requiring low conversion loss and high linearity.
2009-06-11 Connecting Micron CellularRAM devices with the Atmel microcontroller
This application note describes preferred methods for connecting the following Micron CellularRAM devices to the Atmel AT91SAM9260 microcontroller: Micron MT45W4MW16PCGA, a 64Mbit, 48-ball device referred to as the 64Mbit device; and the Micron MT45W8MW16BGX, a 128Mbit, 54-ball device referred to as the 128Mbit device.
2009-06-10 On-chip memory usage guide for LatticeSC devices
This application note discusses memory usage in the LatticeSC family of devices. It is intended for design engineers as a guide to designing and integrating the EBR-based and PFU-based memories of the LatticeSC device family using Lattice ispLEVER design software.
2009-06-10 PSoC devices pack improved analog, digital performance
Cypress Semiconductor Corp. has launched two new programmable SoC (PSoC) with enhanced analog and digital performance.
2009-06-09 Hamming codes for NAND flash memory devices
This application note describes the use of simple Hamming codes to detect and correct data corruption that occurs during normal SLC NAND flash device operation.
2009-06-09 Wear-leveling techniques in NAND flash devices
Wear leveling is a process that helps reduce premature wear in NAND flash devices. This application note highlights the importance of wear leveling, explains two primary wear-leveling techniques��static and dynamic��and calls attention to other considerations involved in implementing wear leveling.
2009-06-05 SEU strategies for Virtex-5 devices
Xilinx devices are designed to have an inherently low susceptibility to single event upsets (SEUs). This application note provides a substantial discussion of strategies and representative calculations for handling SEUs with an emphasis on reliability when addressing these low probability events.
2009-06-02 Electrical overstress damage of TI 1394 PHY devices
This application note provides information on how to recognize a 1394 PHY device that has been damaged by a late Vg event, an explanation of how the damage occurs and suggestions on both decreasing the frequency of late Vg events in a system and protecting 1394 PHY devices from damage due to late Vg events.
2009-05-29 0.8mm-thick solar module targets mobile devices
Sharp Corp. has developed the LR0GC02 solar module for mobile devices that features a thickness of 0.8mm, touted to be thinnest level.
2009-05-28 Rambus details DDR4 DRAM roadmap
Rambus Inc. has unveiled a set of new and existing interconnect technologies it claimed will meet the needs of main memory in 2011 and beyond. It hopes the industry adopts the techniques as part of a pending DDR4 DRAM standard.
2009-05-25 Using C30 compiler to interface serial SRAM devices to dsPIC33F and PIC24F
This application note is part of a series that provide source code to help the user implement the protocol with minimal effort.
2009-05-22 Power consumption and management for LatticeECP3 devices
This application note provides information on power supply considerations and the power calculations that the Power Calculator tool provides. Also included are some guidelines to reduce power consumption.
2009-05-22 Solder reflow attach method for high power RF devices in over-molded plastic packages
This application note aims to provide Freescale Semiconductor customers with a guideline for solder reflow mounting of high power RF transistors and ICs in over-molded plastic (OMP) packages.
2009-05-21 PoE controller fits 13/26W powered devices
From Texas Instruments Inc. comes a high-efficiency, high-power PoE controller targeting 13- or 26W powered device applications, such as IP phones, wireless access points or security cameras.
2009-05-19 Trade group skeptical on Taiwan DRAM venture
The Taiwanese government plan to consolidate the island's DRAM industry around the state-backed Taiwan Memory Co. (TMC) remains unclear and could do more harm than good, according to a report released May 14 by a U.S.-Taiwan lobbying group.
2009-05-12 Micron back on No. 3 spot in DRAM ranking
For the first time in more than three years, Micron Technology Inc. was back at the top three in global DRAM market share for Q1, an analyst said in a report.
2009-05-05 What should Taiwan DRAM makers do to survive?
Taiwan's DRAM makers have been losing money for a long while. And there is no end in sight. According to Mark LaPedus, it's time for Taiwan's DRAM makers to merge, consolidate��or give up.
2009-04-29 GPIO ports configuration in ST30 devices
This application note describes the best practice for GPIO ports configuration.
2009-04-29 1Gbit mobile DRAM touts high speed at low power
Hynix Semiconductor Inc. has developed the first mobile 1Gbit DDR2 DRAM using 54nm process technology.
2009-04-27 Modulator combines four devices in one chip
Analog devices Inc. has added a highly integrated modulator in its broad portfolio of RF ICs, for broadband satellite communications applications, such as very small aperture terminals.
2009-04-16 Marvell bets big on connected devices
Leveraging its homegrown ARM-based Sheeva CPU processors, Marvell Technology Group's co-founder and CEO has a clear vision: Enabling the next billion users of connected devices.
2009-04-14 High-performance DDR3 SDRAM interface in Virtex-5 devices
This application note describes the controller and the data capture technique for high-performance DDR3 SDRAM interfaces.
2009-04-13 High-performance DDR2 SDRAM interface in Virtex-5 devices
This application note describes a 667 Mb/s DDR2 SDRAM interface implemented in a Virtex-5 device.
2009-04-09 Unlock Micron's 50nm DRAM technology
With their latest 50nm process technology, Micron Technology Inc. seems to have struck the right balance between investment in new technologies and conservative design decisions.
2009-04-09 Micron veers away from Taiwan DRAM venture
Micron Technology Inc. has cut its capital spending amid ongoing losses and a lowered forecast, and disclosed it has no plans to join the new DRAM venture in Taiwan��for now.
2009-04-07 Serial module designed for legacy devices
I/O Products Inc. has just introduced its next-generation Model USB-FLEXCOM4 communications adapters that offer users the choice of four field selectable RS-232, RS-422 or RS-485 protocols per port. This serial module was designed for use in systems where there are never enough serial ports to communicate with legacy devices.
2009-04-06 devices expand Dynastron image sensor lineup
Toshiba America Electronic Components Inc. expanded its line of Dynastron image sensor and chip scale camera modules (CSCMs) with the introduction of a new 8Mpixel CMOS image sensor and a 2MPixel CSCM in a 1/5-inch optical format.
2009-04-02 DRAM makers to keep low utilization rates in 2009
A new report from DRAMeXchange stated that DRAM makers will be forced to maintain low utilization rates of under 50 percent by end of 2009, resulting in 2.43 percent bit growth, compared to 95 percent in 2007 and 66 percent in 2008.
2009-04-01 QDR II SRAM interface for Virtex-5 devices
This application note describes the implementation and timing details of a Quad Data Rate (QDR II) SRAM interface for Virtex-5 devices.
2009-03-30 PSC chair warns of DRAM shortage
World Semiconductor Council chairman Frank Huang has warned that the aggressive capacity cuts in DRAMs over the past few months are likely to lead to significant shortage by the end of the year.
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